Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 12

Results: 20

Effect of the soldering time on the formation of interfacial structure between Sn–Ag–Zn lead-free solder and Cu substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1160, doi. 10.1007/s10854-007-9505-0

By:

Jing Bo Wan;
Yong Chang Liu;
Chen Wei;
Peng Jiang;
Zhi Gao

Publication type:

Article

Ca4La2Ti5O17: a novel low loss dielectric ceramics in the CaO–La2O3–TiO2 system.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1153, doi. 10.1007/s10854-007-9503-2

By:

Rejini, R.;
Subodh, G.;
Sebastian, M. T.

Publication type:

Article

Impedance spectroscopy analysis of SnO2 thick-films gas sensors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1169, doi. 10.1007/s10854-007-9517-9

By:

Ponce, M. A.;
Bueno, P.;
Varela, J.;
Castro, M.;
Aldao, C.

Publication type:

Article

Effect of excess Pb in PbTiO3 precursors on ferroelectric and fatigue property of sol–gel derived PbTiO3/PbZr0.3Ti0.7O3/PbTiO3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1191, doi. 10.1007/s10854-007-9524-x

By:

Longhai Wang;
Jun Yu;
Yunbo Wang;
Junxiong Gao

Publication type:

Article

High-yield fabrication of t-Se nanowires via hydrothermal method and their photoconductivity.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1209, doi. 10.1007/s10854-007-9535-7

By:

Liang Cheng;
Mingwang Shao;
Chen, Dayan;
Xianwen Wei;
Fengxia Wang;
Jun Hua

Publication type:

Article

Microstructure, dielectric and photoluminescence properties of Tm-doped Ba0.8Sr0.2TiO3 thin films fabricated by sol–gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1184, doi. 10.1007/s10854-007-9523-y

By:

Jun Wang;
Tianjin Zhang;
Neng Wan;
Junhuai Xiang

Publication type:

Article

Structural, optical and microscopic properties of chemically deposited In2Se3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1252, doi. 10.1007/s10854-008-9585-5

By:

Hankare, P. P.;
Asabe, M. R.;
Chate, P. A.;
Rathod, K. C.

Publication type:

Article

Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1197, doi. 10.1007/s10854-007-9527-7

By:

Wencheng Hu;
Chuanren Yang;
Wanli Zhang

Publication type:

Article

Fabrication and microstructures of sequentially electroplated Au-rich, eutectic Au/Sn alloy solder.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1176, doi. 10.1007/s10854-007-9522-z

By:

Wenming Tang;
Anqiang He;
Qi Liu;
Ivey, Douglas

Publication type:

Article

Simple synthesis of ZnS nanoparticles in alkaline medium.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1206, doi. 10.1007/s10854-007-9529-5

By:

Saravanan, Nagalingam;
Geok Bee Teh;
Samuel Yong Peen Yap;
Kar Mum Cheong

Publication type:

Article

Pure-blue tandem OLEDs based on terfluorenes compounds.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1202, doi. 10.1007/s10854-007-9528-6

By:

Fuxiang Wei;
Fang, L.

Publication type:

Article

Surface modification and characterization of indium–tin oxide for organic light-emitting devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1214, doi. 10.1007/s10854-007-9545-5

By:

Li, L.;
Yu, J. S.;
Lou, S. L.;
Li, W. Z.;
Jiang, Y. D.

Publication type:

Article

Tin dioxide on semiconductor as material for new electronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1222, doi. 10.1007/s10854-007-9546-4

By:

Fink, D.;
Kiv, A.;
Golovanov, V.;
Chen, J.;
Chandra, A.;
Ivanovskaya, M.;
Khirunenko, L.;
Fuks, D.

Publication type:

Article

Fabrication and dielectric properties of textured Na0.5Bi0.5TiO3-BaTiO3 ceramics by RTGG method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1228, doi. 10.1007/s10854-007-9547-3

By:

Feng Gao;
Li-Hong Cheng;
Rong-Zi Hong;
Jia-Ji Liu;
Yong-Hong Yao;
Chang-Sheng Tian

Publication type:

Article

Effect of plasma treated sol-gel dielectric towards the morphology of pentacene.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1247, doi. 10.1007/s10854-008-9580-x

By:

Aw, K. C.;
Salim, N. Tjitra;
Lohani, Anup;
Gao, W.

Publication type:

Article

Electrical properties of LaBi8Fe5Ti3O27.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1240, doi. 10.1007/s10854-008-9578-4

By:

Patri, S. K.;
Choudhary, R. N. P.

Publication type:

Article

The influence of surface cleaning on the stability of Pd/GaAs contacts.

Published in:

2008

By:

Machác˘, Petr;
Perina, Vratislav

Publication type:

Correction Notice

Effects of glass components on crystallization and dielectric properties of BST glass–ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1233, doi. 10.1007/s10854-008-9566-8

By:

Isaka, Nobuyuki;
Ohkawa, Kensuke;
Kiyono, Hajime;
Itoh, Hidenobu;
Takahashi, Junichi

Publication type:

Article

Preparation and luminescent properties of CaTiO3: Pr3+, Al3+ persistent phosphors by nitrate-citric acid combustion method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1147, doi. 10.1007/s10854-007-9502-3

By:

Shun Li;
Xixi Liang

Publication type:

Article

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1

By:

Bergaoui, M. S.;
Boufaden, T.;
Guermazi, S.;
Agnel, S.;
Toureille, A.;
El Jani, B.

Publication type:

Article

Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 12

Effect of the soldering time on the formation of interfacial structure between Sn–Ag–Zn lead-free solder and Cu substrate.

Ca<sub>4</sub>La<sub>2</sub>Ti<sub>5</sub>O<sub>17</sub>: a novel low loss dielectric ceramics in the CaO–La<sub>2</sub>O<sub>3</sub>–TiO<sub>2 </sub>system.

Impedance spectroscopy analysis of SnO<sub>2</sub> thick-films gas sensors.

Effect of excess Pb in PbTiO<sub>3</sub> precursors on ferroelectric and fatigue property of sol–gel derived PbTiO<sub>3</sub>/PbZr<sub>0.3</sub>Ti<sub>0.7</sub>O<sub>3</sub>/PbTiO<sub>3</sub> thin films.

High-yield fabrication of t-Se nanowires via hydrothermal method and their photoconductivity.

Microstructure, dielectric and photoluminescence properties of Tm-doped Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3 </sub>thin films fabricated by sol–gel method.

Structural, optical and microscopic properties of chemically deposited In<sub>2</sub>Se<sub>3</sub> thin films.

Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method.

Fabrication and microstructures of sequentially electroplated Au-rich, eutectic Au/Sn alloy solder.

Simple synthesis of ZnS nanoparticles in alkaline medium.

Pure-blue tandem OLEDs based on terfluorenes compounds.

Surface modification and characterization of indium–tin oxide for organic light-emitting devices.

Tin dioxide on semiconductor as material for new electronics.

Fabrication and dielectric properties of textured Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> ceramics by RTGG method.

Effect of plasma treated sol-gel dielectric towards the morphology of pentacene.

Electrical properties of LaBi<sub>8</sub>Fe<sub>5</sub>Ti<sub>3</sub>O<sub>27</sub>.

The influence of surface cleaning on the stability of Pd/GaAs contacts.

Effects of glass components on crystallization and dielectric properties of BST glass–ceramics.

Preparation and luminescent properties of CaTiO<sub>3</sub>: Pr<sup>3+</sup>, Al<sup>3+</sup> persistent phosphors by nitrate-citric acid combustion method.

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.