Local vibrational modes of N<sub>2</sub>−O<sub> n </sub> defects in Cz-Silicon.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 683, doi. 10.1007/s10854-006-9097-0
- By:
- Publication type:
- Article
Works matching IS 09574522 AND DT 2007 AND VI 18 AND IP 7
Results: 22
1
2
The response of open-volume defects in Si<sub>0.92</sub>Ge<sub>0.08</sub> to annealing in nitrogen or oxygen ambient.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 753, doi. 10.1007/s10854-006-9084-5
- By:
- Publication type:
- Article
3
Ab initio investigation of boron diffusion paths in germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 775, doi. 10.1007/s10854-006-9071-x
- By:
- Publication type:
- Article
4
Early stage donor-vacancy clusters in germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 769, doi. 10.1007/s10854-006-9069-4
- By:
- Publication type:
- Article
5
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 695, doi. 10.1007/s10854-006-9080-9
- By:
- Publication type:
- Article
6
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 705, doi. 10.1007/s10854-006-9092-5
- By:
- Publication type:
- Article
7
Oxygen defects in irradiated germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 781, doi. 10.1007/s10854-006-9083-6
- By:
- Publication type:
- Article
8
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 689, doi. 10.1007/s10854-006-9093-4
- By:
- Publication type:
- Article
9
Doped silicon under uniaxial tensile strain investigated by PAC.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 715, doi. 10.1007/s10854-006-9095-2
- By:
- Publication type:
- Article
10
Analysis of the (100)Si/LaAlO<sub>3</sub> structure by electron spin resonance: nature of the interface.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 735, doi. 10.1007/s10854-006-9072-9
- By:
- Publication type:
- Article
11
Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 793, doi. 10.1007/s10854-006-9096-1
- By:
- Publication type:
- Article
12
Infrared absorption spectra of defects in carbon doped neutron-irradiated Si.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 721, doi. 10.1007/s10854-006-9101-8
- By:
- Publication type:
- Article
13
Germanium content dependence of the leakage current of recessed SiGe source/drain junctions.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 787, doi. 10.1007/s10854-006-9102-7
- By:
- Publication type:
- Article
14
Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 701, doi. 10.1007/s10854-006-9109-0
- By:
- Publication type:
- Article
15
Lifetime and leakage current considerations in metal-doped germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 799, doi. 10.1007/s10854-006-9110-7
- By:
- Publication type:
- Article
16
Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTs.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 729, doi. 10.1007/s10854-007-9117-8
- By:
- Publication type:
- Article
17
Atomic scale simulations of donor–vacancy pairs in germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 763, doi. 10.1007/s10854-006-9073-8
- By:
- Publication type:
- Article
18
Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 711, doi. 10.1007/s10854-006-9103-6
- By:
- Publication type:
- Article
19
Iron-aluminium pair reconfiguration processes in SiGe alloys.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 759, doi. 10.1007/s10854-006-9104-5
- By:
- Publication type:
- Article
20
EPR characterization of defects in m-HfO<sub>2</sub>.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 743, doi. 10.1007/s10854-007-9119-6
- By:
- Publication type:
- Article
21
Editorial.
- Published in:
- 2007
- By:
- Publication type:
- Editorial
22
High boron incorporation in selective epitaxial growth of SiGe layers.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 747, doi. 10.1007/s10854-007-9121-z
- By:
- Publication type:
- Article