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Advanced research into the growth mechanism and optical properties of wurtzite ZnSe quantum dots.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3639, doi. 10.1007/s10854-014-2068-y
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Growth characteristics and device properties of MOD derived β-GaO films.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3629, doi. 10.1007/s10854-014-2066-0
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Green synthesis of α-FeO nanoparticles for photocatalytic application.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3572, doi. 10.1007/s10854-014-2058-0
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Fabrication and photoluminescence properties of ridged TiO nanotube arrays.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3290, doi. 10.1007/s10854-014-2016-x
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Fluxless bonding of Si chips to aluminum boards using electroplated Sn solder.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3276, doi. 10.1007/s10854-014-2014-z
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Highly efficient photocatalytic performance of graphene-AgVO composites.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3480, doi. 10.1007/s10854-014-2042-8
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Hydrothermal synthesis and luminescence of MWO:Tb (M = Ca, Sr, Ba) microsphere phosphors.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3271, doi. 10.1007/s10854-014-2013-0
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Non-toxic selenization using thermal annealing for CuGa/In bi-layer precursors deposited by sputtering.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3492, doi. 10.1007/s10854-014-2044-6
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Enhanced internal gettering in n/n epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3486, doi. 10.1007/s10854-014-2043-7
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Composite dielectrics (1−x)(MgZn)(TiSn)O−xCaTiO suitable for microwave applications.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3318, doi. 10.1007/s10854-014-2020-1
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Enhanced ferroelectric and dielectric properties of the P(VDF-TrFE)/Ag nanoparticles composite thin films.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3461, doi. 10.1007/s10854-014-2039-3
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Fabrication of CuZnSnS absorber layers with adjustable Zn/Sn and Cu/Zn+Sn ratios.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3344, doi. 10.1007/s10854-014-2024-x
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Synthesis and photovoltaic properties of star-shaped triphenylamine molecules with donor-acceptor unit as core.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3559, doi. 10.1007/s10854-014-2056-2
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Electrospinning preparation and luminescence properties of one-dimensional SrWO: Sm nanofibers.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3324, doi. 10.1007/s10854-014-2021-0
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The preparation of novel hollow tetragonal starlike polyaniline and its electrochemical performance.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3509, doi. 10.1007/s10854-014-2047-3
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Role of solvent volume on the structural and transparent conducting properties of SnO: Zn films.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3594, doi. 10.1007/s10854-014-2061-5
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Comparison of optical properties between ladder and lambda-type EIT medium with Er ion concentration in Er:YAG crystal.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3578, doi. 10.1007/s10854-014-2059-z
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Wettability and interfacial whiskers of Sn-9Zn-0.5Ga-0.08Nd solder with Sn, SnBi and Au/Ni coatings.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3520, doi. 10.1007/s10854-014-2049-1
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Synthesis of novel D-Pi-A chromophore with two reactive groups in the middle section.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3633, doi. 10.1007/s10854-014-2067-z
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Structural and optical properties of CdZnS (0 ≤ x ≤ 0.3) nanoparticles.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3308, doi. 10.1007/s10854-014-2019-7
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Microwave dielectric properties of (1 − x)(MgZn)SiO-xCaTiO composite ceramics.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3601, doi. 10.1007/s10854-014-2062-4
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Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3301, doi. 10.1007/s10854-014-2018-8
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Thermal properties of Sn-based solder alloys.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3440, doi. 10.1007/s10854-014-2036-6
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Successive relaxor ferroelectric behavior in La modified (Ba,Sr)TiO borosilicate glass ceramics.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3532, doi. 10.1007/s10854-014-2051-7
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MgO-TiO-ZnO-CaO ceramics: effect of milling process on dielectric properties.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3504, doi. 10.1007/s10854-014-2046-4
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Carbon nanotubes anchored with SnO nanosheets as anode for enhanced Li-ion storage.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3353, doi. 10.1007/s10854-014-2025-9
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Preparation of ZnO nanoparticles using electrodeposition and co-precipitation techniques for dye-sensitized solar cells applications.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3412, doi. 10.1007/s10854-014-2033-9
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Low temperature synthesis of Ba(ZrTi)O-0.5(BaCa)TiO nanopowders by solution based auto combustion method.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3515, doi. 10.1007/s10854-014-2048-2
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Structural refinement, optical and electrical properties of [BaSm](ZrTi)O ceramics.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3427, doi. 10.1007/s10854-014-2035-7
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Fabrication and characterization of X-ray array detectors based on polycrystalline PbI thick films.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3337, doi. 10.1007/s10854-014-2023-y
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Comparative study of CaBi(PO):Eu phosphors prepared by three methods.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3526, doi. 10.1007/s10854-014-2050-8
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Significant modification to Bi-doped BaTiO by Sm in gaseous penetration process.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3543, doi. 10.1007/s10854-014-2054-4
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Synthesis and luminescence properties of novel β-ZnBPO:Ln (Ln = Ce, Eu, Eu) phosphors.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3498, doi. 10.1007/s10854-014-2045-5
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Microstructures and microwave dielectric properties of LiZnTiO ceramics prepared by reaction-sintering process.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3358, doi. 10.1007/s10854-014-2026-8
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Structural, electrical and piezoelectric properties of V-, Nb- and W-substituted CaBiTiO ceramics.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3396, doi. 10.1007/s10854-014-2031-y
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Pulse electrodeposited AgInS films.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3332, doi. 10.1007/s10854-014-2022-z
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Study of electrical and micro-structural properties of high-κ gate dielectric stacks deposited using pulse laser deposition for MOS capacitor applications.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3257, doi. 10.1007/s10854-014-2011-2
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Effect of loading rate on the creep behaviour of epoxy resin insulators by nanoindentation.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3552, doi. 10.1007/s10854-014-2055-3
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Optical dispersion and dielectric properties of rubrene organic semiconductor thin film.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3586, doi. 10.1007/s10854-014-2060-6
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Preparation of TiO particles and surface silanization modification for electronic ink.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3285, doi. 10.1007/s10854-014-2015-y
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Facile synthesis and novel microwave electromagnetic properties of flower-like Ni structures by a solvothermal method.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3614, doi. 10.1007/s10854-014-2064-2
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Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3264, doi. 10.1007/s10854-014-2012-1
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Control of metal salt ratio and MoS layer thickness in a CuZnSnS thin film solar cell.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3420, doi. 10.1007/s10854-014-2034-8
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One-pot hydrothermal synthesis of rod-like FeOOH/reduced graphene oxide composites for supercapacitor.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3364, doi. 10.1007/s10854-014-2027-7
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Improvement of the critical current density in Bi-2223 ceramics by sodium-silver co-doping.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3295, doi. 10.1007/s10854-014-2017-9
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Solution synthesis and characterization of n-type zinc indium selenide films for the buffer layer used in Cu(In,Ga)Se solar cells.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3622, doi. 10.1007/s10854-014-2065-1
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Structural, luminescence and magnetic properties of Mn doped ZnO thin films using spin coating technique.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3466, doi. 10.1007/s10854-014-2040-x
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Characterization of TiO nanoparticles prepared using different surfactants by sol-gel method.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3473, doi. 10.1007/s10854-014-2041-9
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Effects of Ga addition on microstructure and properties of Sn-0.5Ag-0.7Cu solder.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3566, doi. 10.1007/s10854-014-2057-1
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Resistive switching in $$\hbox {BiFeO}_3$$ -based heterostructures due to ferroelectric modulation on interface Schottky barriers.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3251, doi. 10.1007/s10854-014-2010-3
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