Found: 16
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Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 897, doi. 10.1007/s10854-009-0013-2
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- Article
Investigation of rare earth-doped BiAg high-temperature solders.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 875, doi. 10.1007/s10854-009-0010-5
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- Article
‘ Lead Free’ thick film thermistors: a study of variation in glass frit concentration and organics composition.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 861, doi. 10.1007/s10854-009-0008-z
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- Article
Dielectric and piezoelectric studies of perovskite-tungsten bronze structured (1 − x)[0.5PMN-0.5PZT]- xPBBiN nanoceramic composites by high-energy mechanical activation technique.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 932, doi. 10.1007/s10854-009-0020-3
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- Article
Electron field emission properties of carbon nanoflakes prepared by RF sputtering.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 926, doi. 10.1007/s10854-009-0019-9
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- Article
Synthesis and DSC study on Sn3.5Ag alloy nanoparticles used for lower melting temperature solder.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 868, doi. 10.1007/s10854-009-0009-y
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- Article
Effect of praseodymium on the microstructure and properties of Sn3.8Ag0.7Cu solder.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 910, doi. 10.1007/s10854-009-0017-y
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- Article
Nanocrystalline grain size in ZnS thin films deposited by chemical bath technique.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 906, doi. 10.1007/s10854-009-0016-z
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- Article
Crystallization characteristic and properties of some zinc containing soda lime silicate glasses.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 889, doi. 10.1007/s10854-009-0012-3
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- Article
Electrical properties of R<sub>2</sub>O–Al<sub>2</sub>O<sub>3</sub>–SiO<sub>2</sub> glass–ceramics for anodic bonding.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 882, doi. 10.1007/s10854-009-0011-4
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- Article
Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 917, doi. 10.1007/s10854-009-0018-x
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- Article
Microwave dielectric properties of Ba<sub>5</sub>Nb<sub>4</sub>O<sub>15</sub> ceramic by molten salt method.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 939, doi. 10.1007/s10854-009-0021-2
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- Article
High- T<sub>C</sub> phase transition in K<sub>2</sub>Ti<sub>6</sub>O<sub>13</sub> lead-free ceramic synthesised using solid-state reaction.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 902, doi. 10.1007/s10854-009-0015-0
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- Article
Fabrication of ZnO nanostructure within the AAO template by electrochemical deposition.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 950, doi. 10.1007/s10854-009-0023-0
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- Article
Impact of plasma etching on fabrication technology of liquid crystal polymer printed circuit board.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 954, doi. 10.1007/s10854-009-0024-z
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- Article
Effect of geometry and dielectric material on thermo-mechanical strain on micro-vias in build-up substrates.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 9, p. 943, doi. 10.1007/s10854-009-0022-1
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- Article