Found: 16
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Microstructure and electrical properties of (Ta, Co, Pr) doped TiO<sub>2</sub> based electroceramics.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 246, doi. 10.1007/s10854-009-9900-9
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- Article
Impression creep of the rare-earth doped Sn–2%Bi lead-free solder alloy.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 262, doi. 10.1007/s10854-009-9903-6
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- Article
Study on creep characterization of nano-sized Ag particle-reinforced Sn–Pb composte solder joints.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 256, doi. 10.1007/s10854-009-9902-7
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- Article
Microwave dielectric properties of low temperature firing (Li<sub>1/2</sub>Nd<sub>1/2</sub>)WO<sub>4</sub> ceramic.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 252, doi. 10.1007/s10854-009-9901-8
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- Article
Study on properties of forsterite/cordierite ceramic composites.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 231, doi. 10.1007/s10854-009-9897-0
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- Article
Investigation on deep level defects in rapid thermal annealed undoped n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 285, doi. 10.1007/s10854-009-9906-3
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- Article
Doping effect of Mg<sup>2+</sup> on BaTiO<sub>3</sub>-based metal–dielectric composite system.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 298, doi. 10.1007/s10854-009-9909-0
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- Article
The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 218, doi. 10.1007/s10854-009-9896-1
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- Article
Crystallization of silicon films by new metal mediated mechanism.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 270, doi. 10.1007/s10854-009-9904-5
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- Article
Structure and electrical properties of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-Y<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> lead-free piezoelectric ceramics.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 291, doi. 10.1007/s10854-009-9907-2
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- Article
Low temperature sintering of Li<sub>1.1</sub>Nb<sub>0.58</sub>Ti<sub>0.5</sub>O<sub>3</sub>- xBi<sub>2</sub>O<sub>3</sub> dielectric with adjustable temperature coefficient.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 213, doi. 10.1007/s10854-009-9894-3
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- Article
Copper pillar bump design optimization for lead free flip-chip packaging.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 278, doi. 10.1007/s10854-009-9905-4
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- Article
Structure and piezoelectric properties of lead-free (Na<sub>0.52</sub>K<sub>0.44− x</sub>)(Nb<sub>0.95− x</sub>Sb<sub>0.05</sub>)O<sub>3</sub>- xLiTaO<sub>3</sub> ceramics.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 241, doi. 10.1007/s10854-009-9899-y
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- Article
Two critical grain sizes of Ba<sub>0.6</sub>Sr<sub>0.4</sub>TiO<sub>3</sub> thin films.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 236, doi. 10.1007/s10854-009-9898-z
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- Article
Low-temperature fabrication of BaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> ceramics by reaction controlled sintering.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 302, doi. 10.1007/s10854-009-9910-7
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- Article
Effect of post annealing on structural and optical properties of ZnO thin films deposited by vacuum coating technique.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 309, doi. 10.1007/s10854-009-9912-5
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- Article