Found: 22
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The response of open-volume defects in Si<sub>0.92</sub>Ge<sub>0.08</sub> to annealing in nitrogen or oxygen ambient.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 753, doi. 10.1007/s10854-006-9084-5
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- Article
Ab initio investigation of boron diffusion paths in germanium.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 775, doi. 10.1007/s10854-006-9071-x
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- Article
Early stage donor-vacancy clusters in germanium.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 769, doi. 10.1007/s10854-006-9069-4
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- Article
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 695, doi. 10.1007/s10854-006-9080-9
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- Article
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 705, doi. 10.1007/s10854-006-9092-5
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- Article
Oxygen defects in irradiated germanium.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 781, doi. 10.1007/s10854-006-9083-6
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- Article
Doped silicon under uniaxial tensile strain investigated by PAC.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 715, doi. 10.1007/s10854-006-9095-2
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- Article
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 689, doi. 10.1007/s10854-006-9093-4
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- Article
Analysis of the (100)Si/LaAlO<sub>3</sub> structure by electron spin resonance: nature of the interface.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 735, doi. 10.1007/s10854-006-9072-9
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- Article
Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 793, doi. 10.1007/s10854-006-9096-1
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- Article
Infrared absorption spectra of defects in carbon doped neutron-irradiated Si.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 721, doi. 10.1007/s10854-006-9101-8
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- Article
Local vibrational modes of N<sub>2</sub>−O<sub> n </sub> defects in Cz-Silicon.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 683, doi. 10.1007/s10854-006-9097-0
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- Article
Germanium content dependence of the leakage current of recessed SiGe source/drain junctions.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 787, doi. 10.1007/s10854-006-9102-7
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- Article
Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 701, doi. 10.1007/s10854-006-9109-0
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- Article
Lifetime and leakage current considerations in metal-doped germanium.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 799, doi. 10.1007/s10854-006-9110-7
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- Article
Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTs.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 729, doi. 10.1007/s10854-007-9117-8
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- Article
Atomic scale simulations of donor–vacancy pairs in germanium.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 763, doi. 10.1007/s10854-006-9073-8
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- Article
Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 711, doi. 10.1007/s10854-006-9103-6
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- Article
Iron-aluminium pair reconfiguration processes in SiGe alloys.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 759, doi. 10.1007/s10854-006-9104-5
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- Article
EPR characterization of defects in m-HfO<sub>2</sub>.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 743, doi. 10.1007/s10854-007-9119-6
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- Article
Editorial.
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- 2007
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- Publication type:
- Editorial
High boron incorporation in selective epitaxial growth of SiGe layers.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 747, doi. 10.1007/s10854-007-9121-z
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- Article