Works matching IS 09359648 AND DT 2021 AND VI 33 AND IP 7


Results: 34
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    Hidden Vacancy Benefit in Monolayer 2D Semiconductors.

    Published in:
    Advanced Materials, 2021, v. 33, n. 7, p. 1, doi. 10.1002/adma.202007051
    By:
    • Zhang, Xiankun;
    • Liao, Qingliang;
    • Kang, Zhuo;
    • Liu, Baishan;
    • Liu, Xiaozhi;
    • Ou, Yang;
    • Xiao, Jiankun;
    • Du, Junli;
    • Liu, Yihe;
    • Gao, Li;
    • Gu, Lin;
    • Hong, Mengyu;
    • Yu, Huihui;
    • Zhang, Zheng;
    • Duan, Xiangfeng;
    • Zhang, Yue
    Publication type:
    Article
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    Buried Interfaces in Halide Perovskite Photovoltaics.

    Published in:
    Advanced Materials, 2021, v. 33, n. 7, p. 1, doi. 10.1002/adma.202006435
    By:
    • Yang, Xiaoyu;
    • Luo, Deying;
    • Xiang, Yuren;
    • Zhao, Lichen;
    • Anaya, Miguel;
    • Shen, Yonglong;
    • Wu, Jiang;
    • Yang, Wenqiang;
    • Chiang, Yu‐Hsien;
    • Tu, Yongguang;
    • Su, Rui;
    • Hu, Qin;
    • Yu, Hongyu;
    • Shao, Guosheng;
    • Huang, Wei;
    • Russell, Thomas P.;
    • Gong, Qihuang;
    • Stranks, Samuel D.;
    • Zhang, Wei;
    • Zhu, Rui
    Publication type:
    Article
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