Works matching IS 09359648 AND DT 2016 AND VI 28 AND IP 43


Results: 37
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    Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe<sub>2</sub>/MoS<sub>2</sub> Heterostructure for Ambipolar Field-Effect Transistors.

    Published in:
    Advanced Materials, 2016, v. 28, n. 43, p. 9519, doi. 10.1002/adma.201601949
    By:
    • Lee, Inyeal;
    • Rathi, Servin;
    • Lim, Dongsuk;
    • Li, Lijun;
    • Park, Jinwoo;
    • Lee, Yoontae;
    • Yi, Kyung Soo;
    • Dhakal, Krishna P.;
    • Kim, Jeongyong;
    • Lee, Changgu;
    • Lee, Gwan‐Hyoung;
    • Kim, Young Duck;
    • Hone, James;
    • Yun, Sun Jin;
    • Youn, Doo‐Hyeb;
    • Kim, Gil‐Ho
    Publication type:
    Article
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