Works matching IS 09359648 AND DT 1992 AND VI 4 AND IP 9


Results: 19
    1
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    Materials Forum.

    Published in:
    Advanced Materials, 1992, v. 4, n. 9, p. 594, doi. 10.1002/adma.19920040917
    Publication type:
    Article
    3

    Masthead.

    Published in:
    Advanced Materials, 1992, v. 4, n. 9, p. fmi, doi. 10.1002/adma.19920040901
    Publication type:
    Article
    4
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    7
    8

    Synthesis of Gallane-Amine adducts as potential precursors for GaAs and (AlGa)as MOVPE processes and the crystal structure of the {gallane · 1,3-bis(dimethylamino)propane} adduct H<sub>3</sub>Ga · N(CH<sub>3</sub>)<sub>2</sub>(CH<sub>2</sub>)<sub>3</sub>N(CH<sub>3</sub>)<sub>2</sub>

    Published in:
    Advanced Materials, 1992, v. 4, n. 9, p. 576, doi. 10.1002/adma.19920040911
    By:
    • Lorberth, Jörg;
    • Dorn, Reiner;
    • Wocadlo, Sigrid;
    • Massa, Werner;
    • Göbel, Ernst O.;
    • Marschner, Thomas;
    • Protzmann, Harry;
    • Zsebök, Otto;
    • Stolz, Wolfgang
    Publication type:
    Article
    9

    A construction principle of the <sub>κ</sub>-phase based on the efficient (OH)<sub>donor</sub><sup>...</sup>O<sub>anion</sub> structural functionality: The examples of <sub>κ</sub>-(EDT-TTF(CH<sub>2</sub>OH))<sub>2</sub>X (X = ClO.

    Published in:
    Advanced Materials, 1992, v. 4, n. 9, p. 579, doi. 10.1002/adma.19920040912
    By:
    • Blanchard, Philippe;
    • Boubekeur, Kamal;
    • Sallé, Marc;
    • Duguay, Guy;
    • Jubault, Michel;
    • Gorgues, Alain;
    • Martin, James D.;
    • Canadeli, Enric;
    • Auban-Senzier, Pascale;
    • Jérome, Denis;
    • Batail, Patrick
    Publication type:
    Article
    10
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    14

    Materials Forum.

    Published in:
    Advanced Materials, 1992, v. 4, n. 9, p. 539, doi. 10.1002/adma.19920040903
    Publication type:
    Article
    15
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    Crystal growth in space.

    Published in:
    Advanced Materials, 1992, v. 4, n. 9, p. 538, doi. 10.1002/adma.19920040902
    By:
    • Benz, Klaus-W.
    Publication type:
    Article
    19