Works matching IS 09189890 AND DT 2024 AND VI 33 AND IP 1

Results: 3
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    Development of SiC wafer and V-groove trench MOSFET.

    Published in:
    Journal of the Society of Electrical Materials Engineering / Denki-Zairyo-Gijutsu-Zasshi, 2024, v. 33, n. 1, p. 53
    By:
    • Kenji FUKUDA;
    • Shin HARADA;
    • Tsutomu HORI;
    • Hironori ITOH;
    • Masaki FURUMAI;
    • Tomoaki HATAYAMA;
    • Takeyoshi MASUDA;
    • Yu SAITOH;
    • Kosuke UCHIDA;
    • Toru HIYOSHI
    Publication type:
    Article
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