Issue Information.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2636
- Publication type:
- Article
Works matching IS 08943370 AND DT 2020 AND VI 33 AND IP 3
Results: 34
1
2
Improved quasi‐physical zone division model with analytical electrothermal I<sub>ds</sub> model for AlGaN/GaN heterojunction high electron mobility transistors.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2630
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- Publication type:
- Article
3
A systematic study of device structure on DC and small‐signal characteristics of millimeter‐wave AlGaN/GaN HEMT.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2623
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- Publication type:
- Article
4
A one‐port automatic fixture removal method for de‐embedding.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2622
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- Publication type:
- Article
5
Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2620
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- Publication type:
- Article
6
Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2737
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- Publication type:
- Article
7
Design and high‐power test of the transmission line for millimeter wave deep drilling.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2715
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- Publication type:
- Article
8
A review on the artificial neural network applications for small‐signal modeling of microwave FETs.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2668
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- Publication type:
- Article
9
Exploring the impedance coverage limitation at current generate plane of transistors up to millimeter‐wave band based on comprehensive large signal model.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2665
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- Publication type:
- Article
10
The research on 220‐GHz signal detecting system.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2655
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- Publication type:
- Article
11
Millimeter wave balun design and optimization based on compensation matching capacitors and active S parameter.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2644
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- Publication type:
- Article
12
A novel millimeter‐wave gain equalizer using E‐plane microstrip‐line probe and waveguide resonator.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2643
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- Publication type:
- Article
13
Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2641
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- Publication type:
- Article
14
An improved wideband equivalent circuit model for integrated spiral inductors in CMOS technology.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2640
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- Publication type:
- Article
15
Research on beam‐wave interaction of EIK in THz band.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2619
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- Publication type:
- Article
16
An approach for determining thermal resistance model parameters of SiGe HBT.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2616
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- Publication type:
- Article
17
A millimeter‐wave scalable small signal model of RF CMOS transistor against number of fingers.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2608
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- Publication type:
- Article
18
An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2605
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- Publication type:
- Article
19
A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2599
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- Publication type:
- Article
20
Modeling, simulation, and fabrication of electron optic system for application on 105 GHz high‐power gyrotron.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2593
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- Publication type:
- Article
21
180 to 240 GHz broadband, EM‐based power amplifier using 0.5‐μm InP DHBT technology.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2591
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- Publication type:
- Article
22
An improved open‐short equivalent circuit model for CMOS transistors de‐embedding.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2589
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- Publication type:
- Article
23
Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2587
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- Publication type:
- Article
24
Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2586
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- Publication type:
- Article
25
Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2585
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- Publication type:
- Article
26
A 10‐mW 3.9‐dB NF transformer‐based V‐band low‐noise amplifier in 65‐nm CMOS.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2576
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- Publication type:
- Article
27
Design of 199 to 238 GHz broadband subharmonic mixer combining two‐stage reduced matching technology with Global Design Method.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2581
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- Publication type:
- Article
28
Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit: (Invited).
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2579
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- Publication type:
- Article
29
InGaAs/InP DHBT small‐signal model up to 325 GHz with two intrinsic base resistances.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2551
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- Publication type:
- Article
30
A 27.5‐43.5 GHz 65‐nm CMOS up‐conversion mixer with 0.42 dBm OP<sub>1dB</sub> for 5G applications.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2550
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- Publication type:
- Article
31
A reliable and efficient small‐signal parameter extraction method for GaN HEMTs.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2540
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- Publication type:
- Article
32
Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2538
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- Publication type:
- Article
33
An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2545
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- Publication type:
- Article
34
Terahertz ultrasensitive biosensing metamaterial and metasurface based on spoof surface plasmon polaritons.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2529
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- Publication type:
- Article