Guest editorial for the special issue on modeling of high-frequency silicon transistors.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 703, doi. 10.1002/jnm.1998
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- Publication type:
- Article
Works matching IS 08943370 AND DT 2014 AND VI 27 AND IP 5/6
Results: 20
1
2
Numerical analysis of direct current circuits containing bipolar and metal oxide semiconductor transistors.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 935, doi. 10.1002/jnm.1989
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- Publication type:
- Article
3
Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design.
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- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 846, doi. 10.1002/jnm.1988
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- Article
4
A surface-potential-based model for silicon nanowire junctionless field-effect transistors including interface traps.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 896, doi. 10.1002/jnm.1985
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- Publication type:
- Article
5
Unified current modeling in low-dimensional MOSFETs.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 908, doi. 10.1002/jnm.1976
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- Publication type:
- Article
6
Generic high-frequency small-signal look-up table model extraction for Si-Ge heterojunction bipolar transistors.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 923, doi. 10.1002/jnm.1975
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- Publication type:
- Article
7
Open-source circuit simulation tools for RF compact semiconductor device modelling.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 761, doi. 10.1002/jnm.1973
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- Publication type:
- Article
8
RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 736, doi. 10.1002/jnm.1972
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- Publication type:
- Article
9
The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 863, doi. 10.1002/jnm.1969
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- Publication type:
- Article
10
Prediction of the density of interfacial state produced by radiation in NMOS.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 915, doi. 10.1002/jnm.1967
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- Publication type:
- Article
11
Modeling of parameters for nano-scale surrounding-gate MOSFET considering quantum mechanical effect.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 883, doi. 10.1002/jnm.1965
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- Publication type:
- Article
12
Modeling of high-frequency noise of silicon CMOS transistors for RFIC design.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 802, doi. 10.1002/jnm.1959
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- Publication type:
- Article
13
A surface-potential-based MOSFET compact model accounting for random doping fluctuations.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 748, doi. 10.1002/jnm.1958
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- Publication type:
- Article
14
Silicon-on-insulator MOSFETs models in analog/RF domain.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 707, doi. 10.1002/jnm.1950
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- Publication type:
- Article
15
Nonlinear modeling of LDMOS transistors for high-power FM transmitters.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 780, doi. 10.1002/jnm.1939
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- Publication type:
- Article
16
Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 822, doi. 10.1002/jnm.1938
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- Publication type:
- Article
17
Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 792, doi. 10.1002/jnm.1928
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- Publication type:
- Article
18
Subthreshold current modeling for fully depleted short channel double-gate MOSFETs with consideration of structure asymmetry.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 875, doi. 10.1002/jnm.1927
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- Publication type:
- Article
19
Microwave neural modeling for silicon FinFET varactors.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 834, doi. 10.1002/jnm.1926
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- Publication type:
- Article
20
Polynomial noise modeling of silicon-based GaN HEMTs.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 5/6, p. 812, doi. 10.1002/jnm.1907
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- Publication type:
- Article