Enhanced Terahertz detection in self-switching diodes.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 301, doi. 10.1002/jnm.731
- By:
- Publication type:
- Article
Works matching IS 08943370 AND DT 2010 AND VI 23 AND IP 4/5
Results: 12
1
2
Double-cavity Fabry–Pérot tunable equalizer based on 1D photonic crystals.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 400, doi. 10.1002/jnm.732
- By:
- Publication type:
- Article
3
Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 379, doi. 10.1002/jnm.736
- By:
- Publication type:
- Article
4
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 266, doi. 10.1002/jnm.737
- By:
- Publication type:
- Article
5
Thermal modelling of the chip for the REMS wind sensor.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 340, doi. 10.1002/jnm.738
- By:
- Publication type:
- Article
6
Localization and quantification of noise sources in four-gate field-effect-transistors.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 285, doi. 10.1002/jnm.744
- By:
- Publication type:
- Article
7
Electric power in nanoscale devices with full Coulomb interaction.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 354, doi. 10.1002/jnm.748
- By:
- Publication type:
- Article
8
Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 315, doi. 10.1002/jnm.750
- By:
- Publication type:
- Article
9
Capacitive model for integrated PN varactors of cells with N<sup>+</sup> buried layer.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 364, doi. 10.1002/jnm.751
- By:
- Publication type:
- Article
10
Silicon planar detectors adapted to slow neutron detection.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 324, doi. 10.1002/jnm.754
- By:
- Publication type:
- Article
11
Electrical model of organic diodes with field-dependent carrier mobility in the presence of an electric field at the injection interface.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 332, doi. 10.1002/jnm.755
- By:
- Publication type:
- Article
12
Special Issue: 7th Spanish Conference on Electron Devices (CDE2009).
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 263, doi. 10.1002/jnm.776
- By:
- Publication type:
- Article