Works matching IS 08943370 AND DT 2010 AND VI 23 AND IP 4/5
Results: 12
Enhanced Terahertz detection in self-switching diodes.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 301, doi. 10.1002/jnm.731
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- Article
Double-cavity Fabry–Pérot tunable equalizer based on 1D photonic crystals.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 400, doi. 10.1002/jnm.732
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- Article
Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 379, doi. 10.1002/jnm.736
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- Article
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 266, doi. 10.1002/jnm.737
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- Article
Thermal modelling of the chip for the REMS wind sensor.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 340, doi. 10.1002/jnm.738
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- Article
Localization and quantification of noise sources in four-gate field-effect-transistors.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 285, doi. 10.1002/jnm.744
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- Article
Electric power in nanoscale devices with full Coulomb interaction.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 354, doi. 10.1002/jnm.748
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- Article
Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 315, doi. 10.1002/jnm.750
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- Article
Capacitive model for integrated PN varactors of cells with N<sup>+</sup> buried layer.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 364, doi. 10.1002/jnm.751
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- Article
Silicon planar detectors adapted to slow neutron detection.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 324, doi. 10.1002/jnm.754
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- Article
Electrical model of organic diodes with field-dependent carrier mobility in the presence of an electric field at the injection interface.
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- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 332, doi. 10.1002/jnm.755
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- Article
Special Issue: 7th Spanish Conference on Electron Devices (CDE2009).
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 4/5, p. 263, doi. 10.1002/jnm.776
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- Article