Modelling CoolMOSC3 transistor characteristics in SPICE.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 2, p. 127, doi. 10.1002/jnm.727
- By:
- Publication type:
- Article
Works matching IS 08943370 AND DT 2010 AND VI 23 AND IP 2
Results: 6
1
2
Design of a power system stabilizer using decentralized adaptive model following tracking control approach.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 2, p. 63, doi. 10.1002/jnm.722
- By:
- Publication type:
- Article
3
Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 2, p. 88, doi. 10.1002/jnm.725
- By:
- Publication type:
- Article
4
New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 2, p. 107, doi. 10.1002/jnm.726
- By:
- Publication type:
- Article
5
The compact d.c. electrothermal model of power MOSFETs for SPICE.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 2, p. 140, doi. 10.1002/jnm.728
- By:
- Publication type:
- Article
6
Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models.
- Published in:
- International Journal of Numerical Modelling, 2010, v. 23, n. 2, p. 151, doi. 10.1002/jnm.740
- By:
- Publication type:
- Article