Works matching IS 08943370 AND DT 2006 AND VI 19 AND IP 3
Results: 5
Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model.
- Published in:
- International Journal of Numerical Modelling, 2006, v. 19, n. 3, p. 229, doi. 10.1002/jnm.600
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- Article
Explicit modelling of the double-gate MOSFET with VHDL-AMS.
- Published in:
- International Journal of Numerical Modelling, 2006, v. 19, n. 3, p. 239, doi. 10.1002/jnm.609
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- Article
Accurate substrate modelling of RF CMOS.
- Published in:
- International Journal of Numerical Modelling, 2006, v. 19, n. 3, p. 257, doi. 10.1002/jnm.610
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- Article
Comparison of several discretization methods of the Steklov–Poincaré operator.
- Published in:
- International Journal of Numerical Modelling, 2006, v. 19, n. 3, p. 271, doi. 10.1002/jnm.611
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- Publication type:
- Article
An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation.
- Published in:
- International Journal of Numerical Modelling, 2006, v. 19, n. 3, p. 289, doi. 10.1002/jnm.612
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- Article