Works matching IS 03701972 AND DT 2024 AND VI 261 AND IP 11

Results: 46

Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400047

By:

Deura, Momoko;
Wada, Yuichi;
Fujii, Takashi;
Araki, Tsutomu

Publication type:

Article

Metal–Organic Vapor Phase Epitaxy of High‐Quality GaN on Al‐Pretreated Sapphire Substrates Without Using Low‐Temperature Buffer Layers.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400043

By:

Takemura, Kodai;
Fukui, Takato;
Matsuda, Yoshinobu;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

Advantages of Ultrathin AlN/GaN/AlN Quantum Wells for Excitonic Population Distribution and Transition Features Studied by Phononic–Excitonic–Radiative Model.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400038

By:

Chizaki, Masaya;
Ishitani, Yoshihiro

Publication type:

Article

Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400036

By:

Zhang, Zhaozong;
Ishii, Ryota;
Shojiki, Kanako;
Funato, Mitsuru;
Iida, Daisuke;
Ohkawa, Kazuhiro;
Kawakami, Yoichi

Publication type:

Article

Low‐Pressure Chemical Vapor Deposition of Hexagonal Boron Nitride on a‐Plane Sapphire Using BCl3 as a Boron Source.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400037

By:

Hara, Kazuhiko;
Oishi, Taiki;
Ota, Soma;
Aoike, Ruki;
Takahashi, Yuma;
Takemura, Akira;
Kominami, Hiroko

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202470023
Publication type:: Article

Cover Picture.

Published in:: Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202470022
Publication type:: Article

Nitride Semiconductors.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400527

By:

Fujioka, Hiroshi;
Miyake, Hideto;
Hirayama, Hideki;
Yamada, Yoichi;
Funato, Mitsuru;
Katayama, Ryuji;
Kojima, Kazunobu;
Ichikawa, Shuhei;
Murotani, Hideaki;
Uemukai, Masahiro

Publication type:

Article

Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400161

By:

Ikeda, Kazuhisa;
Malik, Shahzeb;
Uemukai, Masahiro;
Tanikawa, Tomoyuki;
Katayama, Ryuji

Publication type:

Article

Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400071

By:

Takeda, Naofumi;
Uemukai, Masahiro;
Tanikawa, Tomoyuki;
Katayama, Ryuji

Publication type:

Article

Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400067

By:

Hoormann, Matthias;
Lüßmann, Frederik;
Margenfeld, Christoph;
Ronning, Carsten;
Meierhofer, Florian;
Waag, Andreas

Publication type:

Article

Red Emission of Well‐Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective‐Area Growth.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400064

By:

Hoshino, Kota;
Togashi, Rie;
Kishino, Katsumi

Publication type:

Article

Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400063

By:

Kachi, Tomoaki;
Takahata, Hayata;
Oka, Ryunosuke;
Ishiguro, Hisanori;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Iwaya, Motoaki;
Saito, Yoshiki;
Okuno, Koji

Publication type:

Article

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400057

By:

Shwe, Thee Ei Khaing;
Asaji, Tatsuya;
Kimura, Ryota;
Iida, Daisuke;
Najmi, Mohammed A.;
Ohkawa, Kazuhiro;
Ishitani, Yoshihiro

Publication type:

Article

Comparison of SiNx Dielectric Layer Grown by Plasma‐Enhanced Chemical Vapor Deposition, Low‐Pressure Chemical Vapor Deposition, and Metal‐Organic Chemical Vapor Deposition in Diamond‐ and GaN‐Based Integrated Devices

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400052

By:

Sun, Haolun;
Wu, Mei;
Wang, Ping;
Yuan, Chao;
Ma, Guoliang;
Yang, Ling;
Ma, Xiaohua;
Hao, Yue

Publication type:

Article

Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400035

By:

Leach, Jacob H.;
Udwary, Kevin;
Dodson, Gregg;
Tran, Tinh B.;
Splawn, Heather A.

Publication type:

Article

Crystal Quality and Efficiency Engineering of InGaN‐Based Red Light‐Emitting Diodes.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400034

By:

Rudinsky, Mikhail;
Bulashevich, Kirill

Publication type:

Article

Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400033

By:

Imabayashi, Hiroki;
Yoshimura, Haruto;
Horikiri, Fumimasa;
Narita, Yoshinobu;
Fujikura, Hajime;
Ohta, Hiroshi;
Mishima, Tomoyoshi;
Shiojima, Kenji

Publication type:

Article

Analysis of Subsurface Damage Structures of Gallium Nitride Substrates Induced by Mechanical Polishing with Diamond Abrasives.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400031

By:

Omiya, Natsuko;
Aida, Hideo;
Takeda, Hidetoshi;
Kanda, Motoki;
Doi, Toshiro

Publication type:

Article

Surface Oxidation of GaN(0001) Simulated by Charge‐Transfer‐Type Molecular Dynamics.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400030

By:

Ohuchi, Yuki;
Saeki, Hidenori;
Sakakima, Hiroki;
Izumi, Satoshi

Publication type:

Article

Characterizations of Subbandgap Optical Absorption in Undoped‐GaN and 90 nm‐Thick Al1−xInxN Thin Film on Sapphire Substrates Grown by Metal–Organic Chemical Vapor Deposition.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400029

By:

Noda, Kouki;
Murakami, Yuto;
Toyoda, Hayata;
Shibata, Kana;
Tsukada, Youna;
Imai, Daichi;
Takeuchi, Tetsuya;
Miyoshi, Makoto;
Miyajima, Takao

Publication type:

Article

Origin of Black Color in Heavily Doped n‐Type GaN Crystal.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400027

By:

Sumi, Tomoaki;
Takino, Junichi;
Okayama, Yoshio;
Usami, Shigeyoshi;
Imanishi, Masayuki;
Yoshimura, Masashi;
Mori, Yusuke

Publication type:

Article

Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400015

By:

Malindretos, Joerg;
Jaeckel, Hendrik;
Hilbrunner, Constantin;
Rizzi, Angela

Publication type:

Article

Adiabatic Potential for Conformational Change of VGa–VN Complex Defects in GaN.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400026

By:

Nakamura, Jota;
Oda, Masato;
Kangawa, Yoshihiro

Publication type:

Article

Reduction in Gap State Density near Valence Band Edge at Al2O3/p‐type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400025

By:

Jiao, Yining;
Nukariya, Takahide;
Takatsu, Umi;
Narita, Tetsuo;
Kachi, Tetsu;
Sato, Taketomo;
Akazawa, Masamichi

Publication type:

Article

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400021

By:

Murotani, Hideaki;
Inai, Kosuke;
Himeno, Kunio;
Tani, Kaichi;
Hayashi, Hiromasa;
Kurai, Satoshi;
Okada, Narihito;
Uesugi, Kenjiro;
Miyake, Hideto;
Yamada, Yoichi

Publication type:

Article

In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400010

By:

Kobayashi, Kenta;
Nishikawa, Taichi;
Watanabe, Ruka;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Iwaya, Motoaki;
Kamei, Toshihiro

Publication type:

Article

High‐Quality Nonpolar a‐Plane AlGaN Film Grown on Si‐Doped AlN Template by Metal Organic Chemical Vapor Deposition.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400022

By:

Cai, Tingsong;
Guo, Yanan;
Liu, Zhibin;
Zhang, Ruijie;
Wang, Dadi;
Li, Jinmin;
Wang, Junxi;
Yan, Jianchang

Publication type:

Article

Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400020

By:

Murotani, Hideaki;
Himeno, Kunio;
Ohkawara, Hayate;
Tani, Kaichi;
Kurai, Satoshi;
Okada, Narihito;
Maeda, Noritoshi;
Khan, Muhammad Ajmal;
Hirayama, Hideki;
Yamada, Yoichi

Publication type:

Article

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300528

By:

Kataoka, Keita;
Narita, Tetsuo;
Tomita, Kazuyoshi;
Yamada, Shinji;
Kachi, Tetsu

Publication type:

Article

Mapping Analysis of Crystalline Perfection and UV‐C Transparency of 2‐in. Aluminum Nitride Substrates Grown by Physical Vapor Transport.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300482

By:

Dalmau, Rafael;
Kirby, Samuel;
Britt, Jeffrey;
Schlesser, Raoul

Publication type:

Article

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400019

By:

Michler, Sondre;
Thapa, Sarad;
Besendörfer, Sven;
Albrecht, Martin;
Weingärtner, Roland;
Meissner, Elke

Publication type:

Article

Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400018

By:

Ishii, Ryota;
Tanaka, Shiki;
Susilo, Norman;
Wernicke, Tim;
Kneissl, Michael;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400017

By:

Watanabe, Hayato;
Wang, Dingding;
Fujii, Takashi;
Iwamoto, Toshiyuki;
Fukuda, Tsuguo;
Deura, Momoko;
Araki, Tsutomu

Publication type:

Article

Impact of Boron Atom Clustering on the Electronic Structure of (B,In)N Alloys.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400016

By:

Nies, Cara‐Lena;
Schulz, Stefan

Publication type:

Article

Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400014

By:

Kubo, Yuta;
Deura, Momoko;
Yamada, Yasuhiro;
Fujii, Takashi;
Araki, Tsutomu

Publication type:

Article

Optimization of In‐Reactor In Situ Activation Annealing Conditions for Tunnel Junction Layers in Multiquantum Shell GaN‐Based Devices.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400009

By:

Takahashi, Mizuki;
Yamanaka, Yuki;
Ii, Shiori;
Shima, Ayaka;
Inaba, Soma;
Kubota, Kosei;
Hattori, Yuta;
Takeuchi, Tetsuya;
Iwaya, Motoaki;
Kamiyama, Satoshi

Publication type:

Article

Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300585

By:

Kamio, Gaku;
Fujioka, Hiroshi;
Maeda, Narihiko

Publication type:

Article

Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300584

By:

Odani, Takafumi;
Iso, Kenji;
Oshima, Yuichi;
Ikeda, Hirotaka;
Mochizuki, Tae;
Izumisawa, Satoru

Publication type:

Article

Analysis of Altered Layers Formed during Substrate Exfoliation of AlGaN Crystals Grown on Periodic AlN Nanopillars Using the Heated‐Pressurized Water Method.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300574

By:

Matsubara, Eri;
Yamada, Ryoya;
Kondo, Ryosuke;
Nishibayashi, Toma;
Imoto, Yoshinori;
Iwayama, Sho;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Maruyama, Takahiro;
Miyake, Hideto;
Kobayashi, Shintaro;
Yamamoto, Taiji;
Iwaya, Motoaki

Publication type:

Article

Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300567

By:

Inai, Kosuke;
Oshimura, Ryota;
Himeno, Kunio;
Fujii, Megumi;
Onishi, Yuta;
Kurai, Satoshi;
Okada, Narihito;
Uesugi, Kenjiro;
Miyake, Hideto;
Yamada, Yoichi

Publication type:

Article

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300573

By:

Akiyama, Toru;
Kawamura, Takahiro

Publication type:

Article

Metal–Organic Chemical Vapor Deposition of n‐AlGaN Grown on Strain‐Relaxed Distributed Bragg Reflector Buffer Layers.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300558

By:

Yamada, Hisashi;
Kumagai, Naoto;
Yamada, Toshikazu

Publication type:

Article

Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300559

By:

Xue, Houyao;
Taniguchi, Shingo;
Saito, Tsubasa;
Sato, Yuichi

Publication type:

Article

The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300542

By:

Tan, Gary;
Abu Bakar, Ahmad Shuhaimi;
Low, Hann Sen;
Ooi, Chong Seng;
Al‐Zuhairi, Omar;
Wong, Yew Hoong;
Norhaniza, Rizuan;
Abdul Rais, Shamsul Amir;
Abd Majid, Wan Haliza

Publication type:

Article

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202300555

By:

Zhang, Han;
Huang, Sen;
Guo, Fuqiang;
Deng, Kexin;
Jiang, Qimeng;
Yin, Haibo;
Wei, Ke;
Gao, Xinguo;
Zhang, Zhaofu;
Wang, Xinhua;
Shen, Bo;
Liu, Xinyu

Publication type:

Article