Works matching IS 03701972 AND DT 2020 AND VI 257 AND IP 4

Results: 37

Nitride Semiconductors.

Published in:: Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.202000162
Publication type:: Article

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900553

By:

Tanaka, Atsushi;
Inotsume, Syo;
Harada, Shunta;
Hanada, Kenji;
Honda, Yoshio;
Ujihara, Toru;
Amano, Hiroshi

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.202070020
Publication type:: Article

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900527

By:

Inotsume, Sho;
Kokubo, Nobuhiko;
Yamada, Hisashi;
Onda, Shoichi;
Kojima, Jun;
Ohara, Junji;
Harada, Shunta;
Tagawa, Miho;
Ujihara, Toru

Publication type:

Article

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900705

By:

Wang, Yekan;
Huynh, Kenny;
Liao, Michael E.;
Yu, Hsuan-Ming;
Bai, Tingyu;
Tweedie, James;
Breckenridge, Mathew Hayden;
Collazo, Ramon;
Sitar, Zlatko;
Bockowski, Michal;
Liu, Yuzi;
Goorsky, Mark S.

Publication type:

Article

Oxygen Incorporation in the Molecular Beam Epitaxy Growth of ScxGa1−xN and ScxAl1−xN.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900612

By:

Casamento, Joseph;
Xing, Huili Grace;
Jena, Debdeep

Publication type:

Article

Effect of InGaN/GaN Superlattice on Lattice Curvature of GaN Layers Grown on Sapphire Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900586

By:

Kaneko, Takushi;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900581

By:

Delgado Carrascon, Rosalia;
Tran, Dat Quoc;
Sukkaew, Pitsiri;
Mock, Alyssa;
Ciechonski, Rafal;
Ohlsson, Jonas;
Zhu, Yadan;
Hultin, Olof;
Monemar, Bo;
Paskov, Plamen P.;
Samuelson, Lars;
Darakchieva, Vanya

Publication type:

Article

Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900567

By:

Chaudhuri, Reet;
Bader, Samuel James;
Chen, Zhen;
Muller, David;
Xing, Huili Grace;
Jena, Debdeep

Publication type:

Article

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900611

By:

Roshko, Alexana;
Brubaker, Matt D.;
Blanchard, Paul T.;
Harvey, Todd E.;
Bertness, Kris A.

Publication type:

Article

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900589

By:

Ito, Tadatoshi;
Sakamoto, Ryota;
Isono, Tatsuya;
Yao, Yongzhao;
Ishikawa, Yukari;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900593

By:

Paudel, Subash;
Zvanut, Mary Ellen;
Iwinska, Malgorzata;
Sochacki, Tomasz;
Bockowski, Michal

Publication type:

Article

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900591

By:

Ghosh, Pijush K.;
Stanchu, Hryhorii V.;
Maidaniuk, Yurii;
Sarollahi, Mirsaeid;
Aldawsari, Manal;
Kuchuk, Andrian V.;
Mazur, Yuriy I.;
Salamo, Gregory J.;
Ware, Morgan E.

Publication type:

Article

Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900590

By:

Mogami, Yosuke;
Osawa, Atsushi;
Ozaki, Kazuto;
Tanioka, Yukitake;
Maeoka, Atsushi;
Itokazu, Yuri;
Kuwaba, Shunsuke;
Jo, Masafumi;
Maeda, Noritoshi;
Yaguchi, Hiroyuki;
Hirayama, Hideki

Publication type:

Article

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900522

By:

Baron, Elias;
Goldhahn, Rüdiger;
Deppe, Michael;
As, Donat J.;
Feneberg, Martin

Publication type:

Article

Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900588

By:

Isono, Tatsuya;
Ito, Tadatoshi;
Sakamoto, Ryota;
Yao, Yongzhao;
Ishikawa, Yukari;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Influence of the Strain Relaxation on the Optical Property of AlGaN Quantum Wells.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900582

By:

Itokazu, Yuri;
Mogami, Yosuke;
Kuwaba, Shunsuke;
Motegi, Shogo;
Osawa, Atsushi;
Maeoka, Atsushi;
Osaki, Kazuto;
Tanioka, Yukitake;
Jo, Masafumi;
Kamata, Norihiko;
Hirayama, Hideki

Publication type:

Article

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900579

By:

Yon, Victor;
Rochat, Névine;
Charles, Matthew;
Nolot, Emmanuel;
Gergaud, Patrice

Publication type:

Article

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900564

By:

Yamaguchi, Akira;
Oozeki, Daisuke;
Kawamoto, Naoya;
Takekawa, Nao;
Bulsara, Mayank;
Murakami, Hisashi;
Kumagai, Yoshinao;
Matsumoto, Koh;
Koukitu, Akinori

Publication type:

Article

Simple and Accurate Prediction of AlGaN Metal‐Organic Vapor Phase Epitaxy Growth.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900576

By:

Charles, Matthew;
Kanyandekwe, Joël;
Lafossas, Matthieu

Publication type:

Article

Low‐to‐Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio‐Frequency Sputtering.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900575

By:

Blasco, Rodrigo;
Valdueza-Felip, Sirona;
Montero, Daniel;
Sun, Michael;
Olea, Javier;
Naranjo, Fernando B.

Publication type:

Article

Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic AlxGa1−xN.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900532

By:

Deppe, Michael;
Henksmeier, Tobias;
Gerlach, Jürgen W.;
Reuter, Dirk;
As, Donat J.

Publication type:

Article

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900573

By:

Freitas, Jaime A.;
Weaver, Bradley D.;
Koehler, Andrew D.;
Gallagher, James C.;
Anderson, Travis J.

Publication type:

Article

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900524

By:

Sumiya, Masatomo;
Kindole, Dickson;
Fukuda, Kiyotaka;
Yashiro, Shuhei;
Takehana, Kanji;
Honda, Tohru;
Imanaka, Yasutaka

Publication type:

Article

High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900565

By:

Song, Jie;
Han, Jung

Publication type:

Article

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900561

By:

Shiojima, Kenji;
Horikiri, Fumimasa;
Narita, Yoshinobu;
Yoshida, Takehiro;
Mishima, Tomoyoshi

Publication type:

Article

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900554

By:

Takahashi, Masahiro;
Tanaka, Atsushi;
Ando, Yuto;
Watanabe, Hirotaka;
Deki, Manato;
Kushimoto, Maki;
Nitta, Shugo;
Honda, Yoshio;
Shima, Kohei;
Kojima, Kazunobu;
Chichibu, Shigefusa F.;
Chen, Kevin J.;
Amano, Hiroshi

Publication type:

Article

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900553

By:

Tanaka, Atsushi;
Inotsume, Syo;
Harada, Shunta;
Hanada, Kenji;
Honda, Yoshio;
Ujihara, Toru;
Amano, Hiroshi

Publication type:

Article

Deep‐Level Defects and Impurities in InGaN Alloys.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900534

By:

Wickramaratne, Darshana;
Dreyer, Cyrus E.;
Shen, Jimmy-Xuan;
Lyons, John L.;
Alkauskas, Audrius;
Van de Walle, Chris G.

Publication type:

Article

First‐Principles Calculation of Bandgaps of Al1−xInxN Alloys and Short‐Period Al1−xInxN/Al1−yInyN Superlattices.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900530

By:

Kawamura, Takahiro;
Fujita, Yuma;
Hamaji, Yuya;
Akiyama, Toru;
Kangawa, Yoshihiro;
Gorczyca, Izabela;
Suski, Tadeusz;
Wierzbowska, Małgorzata;
Krukowski, Stanisław

Publication type:

Article

Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900528

By:

Suemitsu, Tetsuya;
Makabe, Isao

Publication type:

Article

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900527

By:

Inotsume, Sho;
Kokubo, Nobuhiko;
Yamada, Hisashi;
Onda, Shoichi;
Kojima, Jun;
Ohara, Junji;
Harada, Shunta;
Tagawa, Miho;
Ujihara, Toru

Publication type:

Article

Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900526

By:

Kim, Jongmyeong;
Park, Seoung-Hwan;
Ahn, Doyeol;
Yoon, Euijoon

Publication type:

Article

Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900523

By:

Seta, Yuki;
Pradipto, Abdul-Muizz;
Akiyama, Toru;
Nakamura, Kohji;
Ito, Tomonori

Publication type:

Article

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900521

By:

Yamada, Hisashi;
Inotsume, Sho;
Kumagai, Naoto;
Yamada, Toshikazu;
Shimizu, Mitsuaki

Publication type:

Article

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900506

By:

Alfieri, Giovanni;
Sundaramoorthy, Vinoth Kumar

Publication type:

Article

MOCVD Growth and Characterization of InN Quantum Dots.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900508

By:

Reilly, Caroline E.;
Nakamura, Shuji;
DenBaars, Steven P.;
Keller, Stacia

Publication type:

Article

Works matching IS 03701972 AND DT 2020 AND VI 257 AND IP 4

Nitride Semiconductors.

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method.

Masthead.

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer.

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates.

Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc<sub>x</sub>Ga<sub>1−x</sub>N and Sc<sub>x</sub>Al<sub>1−x</sub>N.

Effect of InGaN/GaN Superlattice on Lattice Curvature of GaN Layers Grown on Sapphire Substrates.

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates.

Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures.

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon.

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor.

A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance.

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub>x</sub>Ga<sub>1–x</sub>N Layers.

Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates.

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN.

Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates.

Influence of the Strain Relaxation on the Optical Property of AlGaN Quantum Wells.

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates.

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy.

Simple and Accurate Prediction of AlGaN Metal‐Organic Vapor Phase Epitaxy Growth.

Low‐to‐Mid Al Content (x = 0–0.56) Al<sub>x</sub>In<sub>1−x</sub>N Layers Deposited on Si(100) by Radio‐Frequency Sputtering.

Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al<sub>x</sub>Ga<sub>1−</sub><sub>x</sub>N.

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures.

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire.

High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire.

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates.

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method.

Deep‐Level Defects and Impurities in InGaN Alloys.

First‐Principles Calculation of Bandgaps of Al<sub>1−x</sub>In<sub>x</sub>N Alloys and Short‐Period Al<sub>1−x</sub>In<sub>x</sub>N/Al<sub>1−y</sub>In<sub>y</sub>N Superlattices.

Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness.

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer.

Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate.

Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies.

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B<sub>2</sub>H<sub>6</sub> and NH<sub>3</sub>.

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN.

MOCVD Growth and Characterization of InN Quantum Dots.