Works matching IS 03701972 AND DT 2020 AND VI 257 AND IP 2

Results: 25

Novel Fabrication Technique of Suspended Nanowire Devices for Nanomechanical Applications.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900401

By:

Tomita, Wataru;
Sasaki, Satoshi;
Tateno, Kouta;
Okamoto, Hajime;
Yamaguchi, Hiroshi

Publication type:

Article

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900392

By:

Zhan, Wenbo;
Ishida, Satomi;
Kwoen, Jinkwan;
Watanabe, Katsuyuki;
Iwamoto, Satoshi;
Arakawa, Yasuhiko

Publication type:

Article

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900437

By:

Negishi, Ryota;
Wei, Chaopeng;
Yao, Yao;
Ogawa, Yui;
Akabori, Masashi;
Kanai, Yasushi;
Matsumoto, Kazuhiko;
Taniyasu, Yoshitaka;
Kobayashi, Yoshihiro

Publication type:

Article

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900437

By:

Negishi, Ryota;
Wei, Chaopeng;
Yao, Yao;
Ogawa, Yui;
Akabori, Masashi;
Kanai, Yasushi;
Matsumoto, Kazuhiko;
Taniyasu, Yoshitaka;
Kobayashi, Yoshihiro

Publication type:

Article

A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900545

By:

Chun, Jaeyi;
Li, Siwei;
Malakoutian, Mohamadali;
Ji, Dong;
Chowdhury, Srabanti

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.202070014
Publication type:: Article

Compound Semiconductors.

Published in:: Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.202000025
Publication type:: Article

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900472

By:

Guziewicz, Elzbieta;
Krajewski, Tomasz Aleksander;
Przezdziecka, Ewa;
Korona, Krzysztof P.;
Czechowski, Nikodem;
Klopotowski, Lukasz;
Terziyska, Penka

Publication type:

Article

A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900545

By:

Chun, Jaeyi;
Li, Siwei;
Malakoutian, Mohamadali;
Ji, Dong;
Chowdhury, Srabanti

Publication type:

Article

Below‐Bandgap Photoluminescence from GaAs.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900391

By:

Roca, Ronel Christian;
Fukui, Kosei;
Mizuno, Hiroto;
Suzuki, Mikihito;
Kamiya, Itaru

Publication type:

Article

High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900447

By:

Shirato, Tatsuya;
Hayashi, Yusuke;
Uesugi, Kenjiro;
Shojiki, Kanako;
Miyake, Hideto

Publication type:

Article

Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO2/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900444

By:

Furukawa, Masaaki;
Uenuma, Mutsunori;
Ishikawa, Yasuaki;
Uraoka, Yukiharu

Publication type:

Article

Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900377

By:

Ferdous, Sanjida;
Kamata, Norihiko;
Yagi, Shuhei;
Yaguchi, Hiroyuki

Publication type:

Article

Significant Effects of the D− Band on the Hall Coefficient and the Hall Mobility of n‐InP.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900354

By:

Kajikawa, Yasutomo

Publication type:

Article

Ethanol Detection at the Parts per Billion Level with Single‐Stranded‐DNA‐Modified Graphene Field‐Effect Transistors.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900376

By:

Nozaki, Ryo;
Ikuta, Takashi;
Ueno, Kinuko;
Tsukakoshi, Kaori;
Ikebukuro, Kazunori;
Maehashi, Kenzo

Publication type:

Article

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900374

By:

Rongrueangkul, Karn;
Srisinsuphya, Panithan;
Thainoi, Supachok;
Kiravittaya, Suwit;
Nuntawong, Noppadon;
Thornyanadacha, Nutthaphat;
Sopitpan, Suwat;
Yordsri, Visittapong;
Thanachayanont, Chanchana;
Kanjanachuchai, Songphol;
Ratanathammaphan, Somchai;
Tandaechanurat, Aniwat;
Panyakeow, Somsak

Publication type:

Article

Influence of a Longitudinal Field on the Large In‐Plane Nuclear Field Formation in Single Quantum Dots.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900381

By:

Yamamoto, Sota;
Arakawa, Takuya;
Matsusaki, Ryosuke;
Kaji, Reina;
Adachi, Satoru

Publication type:

Article

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900373

By:

Cao, Lina;
Ye, Hansheng;
Wang, Jingshan;
Fay, Patrick

Publication type:

Article

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900367

By:

Akazawa, Masamichi;
Kamoshida, Ryo;
Murai, Shunta;
Narita, Tetsuo;
Omori, Masato;
Suda, Jun;
Kachi, Tetsu

Publication type:

Article

Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900375

By:

Urakami, Noriyuki;
Kosaka, Maito;
Hashimoto, Yoshio

Publication type:

Article

Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900363

By:

Patwary, Md Abdul Majed;
Saito, Katsuhiko;
Guo, Qixin;
Tanaka, Tooru;
Man Yu, Kin;
Walukiewicz, Wladek

Publication type:

Article

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO2/GaN Interface.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900368

By:

Uenuma, Mutsunori;
Ando, Ryota;
Furukawa, Masaaki;
Uraoka, Yukiharu

Publication type:

Article

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900358

By:

Liborius, Lisa;
Bieniek, Jan;
Nägelein, Andreas;
Tegude, Franz-Josef;
Prost, Werner;
Hannappel, Thomas;
Poloczek, Artur;
Weimann, Nils

Publication type:

Article

High Stability of Epitaxial Graphene on a SiC Substrate.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900357

By:

Kujime, Takaya;
Taniguchi, Yoshiaki;
Akiyama, Daiu;
Kawamura, Yusuke;
Kanai, Yasushi;
Matsumoto, Kazuhiko;
Ohno, Yasuhide;
Nagase, Masao

Publication type:

Article

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900318

By:

Yamada, Hisashi;
Inotsume, Sho;
Kumagai, Naoto;
Yamada, Toshikazu;
Shimizu, Mitsuaki

Publication type:

Article

Works matching IS 03701972 AND DT 2020 AND VI 257 AND IP 2

Novel Fabrication Technique of Suspended Nanowire Devices for Nanomechanical Applications.

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix.

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties.

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties.

A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width.

Masthead.

Compound Semiconductors.

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material.

A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width.

Below‐Bandgap Photoluminescence from GaAs.

High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate.

Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO<sub>2</sub>/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing.

Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light.

Significant Effects of the D<sup>−</sup> Band on the Hall Coefficient and the Hall Mobility of n‐InP.

Ethanol Detection at the Parts per Billion Level with Single‐Stranded‐DNA‐Modified Graphene Field‐Effect Transistors.

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy.

Influence of a Longitudinal Field on the Large In‐Plane Nuclear Field Formation in Single Quantum Dots.

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates.

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing.

Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials.

Nitrogen Doping Effect in Cu<sub>4</sub>O<sub>3</sub> Thin Films Fabricated by Radio Frequency Magnetron Sputtering.

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO<sub>2</sub>/GaN Interface.

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions.

High Stability of Epitaxial Graphene on a SiC Substrate.

Chemical Vapor Deposition Growth of BN Thin Films Using B<sub>2</sub>H<sub>6</sub> and NH<sub>3</sub>.