Works matching IS 03701972 AND DT 2018 AND VI 255 AND IP 5

Results: 38

Nitride Semiconductors.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870121

By:

Gil, Bernard;
Duboz, Jean‐Yves

Publication type:

Article

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018).

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870120

By:

Matsumoto, Koji;
Ono, Toshiaki;
Honda, Yoshio;
Yamamoto, Tetsuya;
Usami, Shigeyoshi;
Kushimoto, Maki;
Murakami, Satoshi;
Amano, Hiroshi

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870119
Publication type:: Article

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018).

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201870118

By:

Janonis, Vytautas;
Jakštas, Vytautas;
Kašalynas, Irmantas;
Prystawko, Pawel;
Kruszewski, Piotr

Publication type:

Article

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700646

By:

Yakimov, Eugene B.;
Polyakov, Alexander Y.;
Vergeles, Pavel S.

Publication type:

Article

Anisotropic Fracture Toughness of Bulk GaN.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700515

By:

Cheng, Yutian;
Cai, Duanjun;
Wang, Hui;
Wu, Jiejun;
Liu, Xiangshun;
Zhang, Guoyi;
Yu, Tongjun

Publication type:

Article

Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700510

By:

Rettig, Oliver;
Scholz, Jan‐Patrick;
Steiger, Natja;
Bauer, Sebastian;
Hubáček, Tomáš;
Zíková, Markéta;
Li, Yueliang;
Qi, Haoyuan;
Biskupek, Johannes;
Kaiser, Ute;
Thonke, Klaus;
Scholz, Ferdinand

Publication type:

Article

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700506

By:

Hakamata, Junya;
Kawase, Yuta;
Dong, Lin;
Iwayama, Sho;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Miyake, Hideto;
Akasaki, Isamu

Publication type:

Article

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700498

By:

Janonis, Vytautas;
Jakštas, Vytautas;
Kašalynas, Irmantas;
Prystawko, Pawel;
Kruszewski, Piotr

Publication type:

Article

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700485

By:

Blumberg, Christian;
Grosse, Simon;
Weimann, Nils;
Tegude, Franz‐Josef;
Prost, Werner

Publication type:

Article

Morphology and Work Function of In, Ag, Mg, and Au Nano‐Islands Grown on AlN(0001) Surface.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700482

By:

Khoussa, Hassan;
Baris, Bulent;
Alchaar, Mohanad;
Chaumeton, Florian;
Ghamnia, Mostefa;
Gauthier, Sébastien;
Martrou, David

Publication type:

Article

Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700481

By:

Oto, Takao;
Mizuno, Yutaro;
Yoshida, Jun;
Yanagihara, Ai;
Miyagawa, Rin;
Ema, Kazuhiro;
Kishino, Katsumi

Publication type:

Article

Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700480

By:

Shiojima, Kenji;
Hashizume, Takanori;
Horikiri, Fumimasa;
Tanaka, Takeshi;
Mishma, Tomoyoshi

Publication type:

Article

Non‐Polar <italic>a</italic>‐Plane AlN Growth on Nitrided <italic>r</italic>‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700478

By:

Adachi, Masayoshi;
Fukuyama, Hiroyuki

Publication type:

Article

Double‐Polarity Selective‐Area Growth of GaN by Metal‐Organic Vapor‐Phase Epitaxy Using Narrow‐Pitch Patterns.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700475

By:

Yagi, Hirotaka;
Osumi, Noriyuki;
Inoue, Yoku;
Nakano, Takayuki

Publication type:

Article

Mechanical Properties of Cubic‐BN(111) Bulk Single Crystal Evaluated by Nanoindentation.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700473

By:

Deura, Momoko;
Kutsukake, Kentaro;
Ohno, Yutaka;
Yonenaga, Ichiro;
Taniguchi, Takashi

Publication type:

Article

Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700472

By:

Zubialevich, Vitaly Z.;
Pampili, Pietro;
Parbrook, Peter J.

Publication type:

Article

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700464

By:

Hospodková, Alice;
Hubáček, Tomáš;
Oswald, Jiří;
Pangrác, Jiří;
Kuldová, Karla;
Hývl, Matěj;
Dominec, Filip;
Ledoux, Gilles;
Dujardin, Christophe

Publication type:

Article

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700457

By:

Blumenthal, Sarah;
Reuter, Dirk;
As, Donat J.

Publication type:

Article

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700454

By:

Takamiya, Kengo;
Yagi, Shuhei;
Yaguchi, Hiroyuki;
Akiyama, Hidefumi;
Shojiki, Kanako;
Tanikawa, Tomoyuki;
Katayama, Ryuji

Publication type:

Article

Systematic Theoretical Investigations for Crystal Structure Deformation in Group‐III Nitrides: A First‐Principles Study.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700446

By:

Tsuboi, Yuma;
Akiyama, Toru;
Nakamura, Kohji;
Ito, Tomonori

Publication type:

Article

Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700445

By:

Coulon, Pierre‐Marie;
Kusch, Gunnar;
Le Boulbar, Emmanuel D.;
Chausse, Pierre;
Bryce, Christopher;
Martin, Robert W.;
Shields, Philip A.

Publication type:

Article

Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700427

By:

Minj, Albert;
Ammar, Hichem Ben;
Cros, Ana;
Garro, Nuria;
Gamarra, Piero;
Delage, Sylvain L.;
Ruterana, Pierre

Publication type:

Article

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700421

By:

Grigelionis, Ignas;
Jakštas, Vytautas;
Janonis, Vytautas;
Kašalynas, Irmantas;
Prystawko, Pawel;
Kruszewski, Piotr;
Leszczyński, Michal

Publication type:

Article

Effects of Ga Supply on the Growth of (11‐22) AlN on <italic>m</italic>‐Plane (10‐10) Sapphire Substrates.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700418

By:

Jo, Masafumi;
Hirayama, Hideki

Publication type:

Article

The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700406

By:

Charles, Matthew;
Baines, Yannick;
Bouis, Renan;
Papon, Anne‐Marie

Publication type:

Article

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700399

By:

Hossain, Tasnia;
Rashid, Mohammad Junaebur;
Frayssinet, Eric;
Baron, Nicolas;
Damilano, Benjamin;
Semond, Fabrice;
Wang, J.;
Durand, Lise;
Ponchet, Anne;
Demangeot, Francois;
Cordier, Yvon

Publication type:

Article

A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700394

By:

Mohamad, Ranim;
Béré, Antoine;
Hounkpati, Viwanou;
Gamarra, Piero;
Chen, Jun;
Ruterana, Pierre

Publication type:

Article

Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700392

By:

Damilano, Benjamin;
Vézian, Stéphane;
Massies, Jean

Publication type:

Article

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700387

By:

Matsumoto, Koji;
Ono, Toshiaki;
Honda, Yoshio;
Yamamoto, Tetsuya;
Usami, Shigeyoshi;
Kushimoto, Maki;
Murakami, Satoshi;
Amano, Hiroshi

Publication type:

Article

Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700382

By:

Akazawa, Masamichi;
Hasezaki, Taito

Publication type:

Article

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700379

By:

Kataoka, Keita;
Narita, Tetsuo;
Iguchi, Hiroko;
Uesugi, Tsutomu;
Kachi, Tetsu

Publication type:

Article

Suppression of Iron Memory Effect in GaN Epitaxial Layers.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700377

By:

Leone, Stefano;
Benkhelifa, Fouad;
Kirste, Lutz;
Manz, Christian;
Mueller, Stefan;
Quay, Ruediger;
Stadelmann, Tim

Publication type:

Article

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700374

By:

Murotani, Hideaki;
Ikeda, Kazuki;
Tsurumaru, Takuto;
Fujiwara, Ryota;
Kurai, Satoshi;
Miyake, Hideto;
Hiramatsu, Kazumasa;
Yamada, Yoichi

Publication type:

Article

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700373

By:

Wecker, Tobias;
Callsen, Gordon;
Hoffmann, Axel;
Reuter, Dirk;
As, Donat J.

Publication type:

Article

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700358

By:

Kurai, Satoshi;
Higaki, Shota;
Imura, Nobuto;
Okawa, Kohei;
Makio, Ryoga;
Okada, Narihito;
Tadatomo, Kazuyuki;
Yamada, Yoichi

Publication type:

Article

Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700329

By:

Akiyama, Toru;
Nakane, Harunobu;
Uchino, Motoshi;
Nakamura, Kohji;
Ito, Tomonori

Publication type:

Article

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700322

By:

Kurai, Satoshi;
Mihara, Renma;
Nobata, Genki;
Okawa, Kohei;
Okada, Narihito;
Tadatomo, Kazuyuki;
Yano, Yoshiki;
Tabuchi, Toshiya;
Matsumoto, Koh;
Yamada, Yoichi

Publication type:

Article

Works matching IS 03701972 AND DT 2018 AND VI 255 AND IP 5

Nitride Semiconductors.

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018).

Masthead.

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018).

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.

Anisotropic Fracture Toughness of Bulk GaN.

Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE.

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates.

Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111).

Morphology and Work Function of In, Ag, Mg, and Au Nano‐Islands Grown on AlN(0001) Surface.

Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.

Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.

Non‐Polar <italic>a</italic>‐Plane AlN Growth on Nitrided <italic>r</italic>‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy.

Double‐Polarity Selective‐Area Growth of GaN by Metal‐Organic Vapor‐Phase Epitaxy Using Narrow‐Pitch Patterns.

Mechanical Properties of Cubic‐BN(111) Bulk Single Crystal Evaluated by Nanoindentation.

Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor.

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties.

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells.

Systematic Theoretical Investigations for Crystal Structure Deformation in Group‐III Nitrides: A First‐Principles Study.

Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs.

Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy.

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K.

Effects of Ga Supply on the Growth of (11‐22) AlN on <italic>m</italic>‐Plane (10‐10) Sapphire Substrates.

The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon.

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate.

A Theoretical Investigation of the Miscibility and Structural Properties of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1−x−y</sub>N Alloys.

Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate.

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.

Effect of Insertion of Ultrathin Al<sub>2</sub>O<sub>3</sub> Interlayer at Metal/GaN Interfaces.

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN.

Suppression of Iron Memory Effect in GaN Epitaxial Layers.

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al<sub>0.61</sub>Ga<sub>0.39</sub>N Epitaxial Layer.

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al<sub>0.64</sub>Ga<sub>0.36</sub>N Double Quantum Wells.

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements.

Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies.

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy.