Works matching IS 03701972 AND DT 2016 AND VI 253 AND IP 5
Results: 32
Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy (Phys. Status Solidi B 5/2016).
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 793, doi. 10.1002/pssb.201670530
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- Article
Issue Information.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 794, doi. 10.1002/pssb.201670531
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- Article
Toward defect-free semi-polar GaN templates on pre-structured sapphire (Phys. Status Solidi B 5/2016).
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 1024, doi. 10.1002/pssb.201670532
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Contents.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 795, doi. 10.1002/pssb.201670533
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- Article
Recent and forthcoming publications in pss.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 799, doi. 10.1002/pssb.201670534
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- Article
Information for authors.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 1021, doi. 10.1002/pssb.201670535
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- Article
Mechanical properties of multiferroic Bi<sub>2</sub>Mn<sub>4</sub>O<sub>10</sub>: Full set of elastic constants determined by inelastic neutron scattering.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 976, doi. 10.1002/pssb.201552670
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Numerical study of self- and heterodiffusion on clean unreconstructed and missing-row reconstructed Pt(110) surfaces.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 875, doi. 10.1002/pssb.201552672
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Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 889, doi. 10.1002/pssb.201552674
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First principle study on alkali metals promotion of CO oxidation over Ir(100).
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 983, doi. 10.1002/pssb.201552437
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Effect of SiC-on-Si template residual stress on GaN residual stress and crystal quality.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 824, doi. 10.1002/pssb.201552626
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Luminescence and photo-thermally stimulated defect-creation processes in Bi<sup>3+</sup>-doped single crystals of lead tungstate.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 895, doi. 10.1002/pssb.201552697
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Seven-inch large-size synthesis of monolayer hexagonal BN film by low-pressure CVD.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 829, doi. 10.1002/pssb.201552619
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- Article
Effect of vanadium doping on the magnetic properties of LiMnPO<sub>4</sub>.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 965, doi. 10.1002/pssb.201552682
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- Article
Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 840, doi. 10.1002/pssb.201552633
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- Article
Toward defect-free semi-polar GaN templates on pre-structured sapphire.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 834, doi. 10.1002/pssb.201552636
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Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 801, doi. 10.1002/pssb.201552638
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Microscopic insight into the pump-probe relaxation dynamics of superconductors: Model study of MgB<sub>2</sub> relaxation within nonlinear response theory.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 942, doi. 10.1002/pssb.201552571
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Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 853, doi. 10.1002/pssb.201552642
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Investigation of the disorder of Ga<sub>1- x</sub>Al <sub>x</sub>As mixed crystals. Part I: Small concentrations.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 990, doi. 10.1002/pssb.201552646
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Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 814, doi. 10.1002/pssb.201552649
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Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 809, doi. 10.1002/pssb.201600075
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Static and dynamic properties of [ hkl] low-symmetry trilayers.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 929, doi. 10.1002/pssb.201552597
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Stability, bonding, and electronic properties of silicon and germanium arsenides.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 862, doi. 10.1002/pssb.201552598
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Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 819, doi. 10.1002/pssb.201552783
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Probing the localization of charge and the extent of disorder through electronic transport on Au nanoparticle-copper phthalocyanine multijunction networks.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 1009, doi. 10.1002/pssb.201552547
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Surfactant-aided exfoliation of molybdenum disulfide for ultrafast pulse generation through edge-state saturable absorption.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 911, doi. 10.1002/pssb.201552304
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Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 918, doi. 10.1002/pssb.201552617
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Electronic and optical properties of MX<sub>3</sub> (M = Ti, Zr and Hf; X = S, Se) structures: A first principles insight.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 868, doi. 10.1002/pssb.201552705
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Raman and photoluminescence properties of ZnO nanowires grown by a catalyst-free vapor-transport process using ZnO nanoparticle seeds.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 883, doi. 10.1002/pssb.201552651
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III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 845, doi. 10.1002/pssb.201552657
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Comparative study of sputter-deposited SnO<sub>2</sub> films doped with antimony or tantalum.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 923, doi. 10.1002/pssb.201552720
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