Works matching IS 03701972 AND DT 2016 AND VI 253 AND IP 1

Results: 31

Green emission from semipolar InGaN quantum wells grown on low-defect (.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 105, doi. 10.1002/pssb.201552298

By:

de Mierry, P.;
Kappei, L.;
Tendille, F.;
Vennéguès, P.;
Leroux, M.;
Zuniga‐Perez, J.

Publication type:

Article

Contents.

Published in:: Physica Status Solidi (B), 2016, v. 253, n. 1, p. 5, doi. 10.1002/pssb.201670505
Publication type:: Article

Semipolar GaN-based heterostructures on foreign substrates (Phys. Status Solidi B 1/2016).

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 1, doi. 10.1002/pssb.201670501

By:

Scholz, Ferdinand;
Caliebe, Marian;
Gahramanova, Gulnaz;
Heinz, Dominik;
Klein, Martin;
Leute, Robert A. R.;
Meisch, Tobias;
Wang, Junjun;
Hocker, Matthias;
Thonke, Klaus

Publication type:

Article

Issue Information.

Published in:: Physica Status Solidi (B), 2016, v. 253, n. 1, p. 2, doi. 10.1002/pssb.201670502
Publication type:: Article

Complete orientational access for semipolar GaN devices on sapphire (Phys. Status Solidi B 1/2016).

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 188, doi. 10.1002/pssb.201670503

By:

Leung, Benjamin;
Wang, Dili;
Kuo, Yu‐Sheng;
Han, Jung

Publication type:

Article

pss - taking legacy to the future.

Published in:: 2016
Publication type:: Editorial

Doping behavior of.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 164, doi. 10.1002/pssb.201552241

By:

Meisch, Tobias;
Zeller, Raphael;
Schörner, Sabine;
Thonke, Klaus;
Kirste, Lutz;
Fuchs, Theo;
Scholz, Ferdinand

Publication type:

Article

Recent and forthcoming publications in pss.

Published in:: Physica Status Solidi (B), 2016, v. 253, n. 1, p. 9, doi. 10.1002/pssb.201670506
Publication type:: Article

Polarization-field control in nitride light emitters.

Published in:: 2016
Publication type:: Other

Semipolar GaN-based heterostructures on foreign substrates.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 13, doi. 10.1002/pssb.201552386

By:

Scholz, Ferdinand;
Caliebe, Marian;
Gahramanova, Gulnaz;
Heinz, Dominik;
Klein, Martin;
Leute, Robert A. R.;
Meisch, Tobias;
Wang, Junjun;
Hocker, Matthias;
Thonke, Klaus

Publication type:

Article

Optimizing GaN (.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 61, doi. 10.1002/pssb.201552263

By:

Pristovsek, Markus;
Frentrup, Martin;
Han, Yisong;
Humphreys, Colin J.

Publication type:

Article

Polar and semipolar (11.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 99, doi. 10.1002/pssb.201552264

By:

Dinh, Duc V.;
Li, Haoning;
Parbrook, Peter J.

Publication type:

Article

Growth and coalescence studies of.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 46, doi. 10.1002/pssb.201552266

By:

Caliebe, Marian;
Han, Yisong;
Hocker, Matthias;
Meisch, Tobias;
Humphreys, Colin;
Thonke, Klaus;
Scholz, Ferdinand

Publication type:

Article

Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 73, doi. 10.1002/pssb.201552451

By:

Schmidt, Gordon;
Veit, Peter;
Wieneke, Matthias;
Bertram, Frank;
Dadgar, Armin;
Krost, Alois;
Christen, Jürgen

Publication type:

Article

InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 78, doi. 10.1002/pssb.201552336

By:

Nishinaka, Junichi;
Funato, Mitsuru;
Kido, Ryohei;
Kawakami, Yoichi

Publication type:

Article

Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 169, doi. 10.1002/pssb.201552407

By:

Rychetsky, M.;
Koslow, I. L.;
Wernicke, T.;
Rass, J.;
Hoffmann, V.;
Weyers, M.;
Kneissl, M.

Publication type:

Article

EBIC investigations on polar and semipolar InGaN LED structures.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 126, doi. 10.1002/pssb.201552284

By:

Knab, Manuel;
Hocker, Matthias;
Felser, Timo;
Tischer, Ingo;
Wang, Junjun;
Scholz, Ferdinand;
Thonke, Klaus

Publication type:

Article

Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 140, doi. 10.1002/pssb.201552288

By:

Lohr, Matthias;
Schregle, Ralph;
Jetter, Michael;
Wächter, Clemens;
Müller‐Caspary, Knut;
Mehrtens, Thorsten;
Rosenauer, Andreas;
Pietzonka, Ines;
Strassburg, Martin;
Zweck, Josef

Publication type:

Article

Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 112, doi. 10.1002/pssb.201552474

By:

Müller, Marcus;
Schmidt, Gordon;
Metzner, Sebastian;
Veit, Peter;
Bertram, Frank;
Leute, Robert Anton Richard;
Heinz, Dominik;
Wang, Junjun;
Meisch, Tobias;
Scholz, Ferdinand;
Christen, Jürgen

Publication type:

Article

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 118, doi. 10.1002/pssb.201552448

By:

Neugebauer, Silvio;
Metzner, Sebastian;
Bläsing, Jürgen;
Bertram, Frank;
Dadgar, Armin;
Christen, Jürgen;
Strittmatter, André

Publication type:

Article

Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 84, doi. 10.1002/pssb.201552354

By:

Buß, E. R.;
Horenburg, P.;
Rossow, U.;
Bremers, H.;
Meisch, T.;
Caliebe, M.;
Scholz, F.;
Hangleiter, A.

Publication type:

Article

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 67, doi. 10.1002/pssb.201552427

By:

Wagner, J.;
Wächter, C.;
Wild, J.;
Müller, M.;
Metzner, S.;
Veit, P.;
Schmidt, G.;
Jetter, M.;
Bertram, F.;
Zweck, J.;
Christen, J.;
Michler, P.

Publication type:

Article

Complete orientational access for semipolar GaN devices on sapphire.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 23, doi. 10.1002/pssb.201552301

By:

Leung, Benjamin;
Wang, Dili;
Kuo, Yu‐Sheng;
Han, Jung

Publication type:

Article

Internal quantum efficiency and carrier injection efficiency of c-plane,.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 174, doi. 10.1002/pssb.201552187

By:

Wang, Junjun;
Meisch, Tobias;
Heinz, Dominik;
Zeller, Raphael;
Scholz, Ferdinand

Publication type:

Article

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 133, doi. 10.1002/pssb.201552353

By:

Langer, Torsten;
Klisch, Manuela;
Alexej Ketzer, Fedor;
Jönen, Holger;
Bremers, Heiko;
Rossow, Uwe;
Meisch, Tobias;
Scholz, Ferdinand;
Hangleiter, Andreas

Publication type:

Article

Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 36, doi. 10.1002/pssb.201552271

By:

Hashimoto, Yasuhiro;
Yamane, Keisuke;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

MOVPE growth and indium incorporation of polar, semipolar (11.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 93, doi. 10.1002/pssb.201552274

By:

Dinh, Duc V.;
Pristovsek, Markus;
Kneissl, Michael

Publication type:

Article

Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 158, doi. 10.1002/pssb.201552276

By:

Shedbalkar, Akshay;
Andreev, Zhelio;
Witzigmann, Bernd

Publication type:

Article

Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 180, doi. 10.1002/pssb.201552277

By:

Leute, Robert A. R.;
Heinz, Dominik;
Wang, Junjun;
Meisch, Tobias;
Müller, Marcus;
Schmidt, Gordon;
Metzner, Sebastian;
Veit, Peter;
Bertram, Frank;
Christen, Jürgen;
Martens, Martin;
Wernicke, Tim;
Kneissl, Michael;
Jenisch, Stefan;
Strehle, Steffen;
Rettig, Oliver;
Thonke, Klaus;
Scholz, Ferdinand

Publication type:

Article

Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 54, doi. 10.1002/pssb.201552467

By:

Metzner, Sebastian;
Bertram, Frank;
Hempel, Thomas;
Meisch, Tobias;
Schwaiger, Stephan;
Scholz, Ferdinand;
Christen, Jürgen

Publication type:

Article

On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 145, doi. 10.1002/pssb.201552419

By:

Schade, L.;
Wernicke, T.;
Rass, J.;
Ploch, S.;
Weyers, M.;
Kneissl, M.;
Schwarz, U. T.

Publication type:

Article