Works matching IS 03701972 AND DT 2015 AND VI 252 AND IP 5

Results: 64

Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 936, doi. 10.1002/pssb.201451582

By:

Kamata, N.;
Touhidul Islam, A. Z. M.;
Julkarnain, M.;
Murakoshi, N.;
Fukuda, T.;
Hirayama, H.

Publication type:

Article

Model for carrier capture time through phonon emission in InGaN/GaN quantum wells.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 971, doi. 10.1002/pssb.201451580

By:

Vallone, Marco;
Bertazzi, Francesco;
Goano, Michele;
Ghione, Giovanni

Publication type:

Article

Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1024, doi. 10.1002/pssb.201451581

By:

Naganawa, Moe;
Aoki, Toshichika;
Son, Ji‐Su;
Amano, Hiroshi;
Shiojima, Kenji

Publication type:

Article

Carrier dynamics in blue and green emitting InGaN MQWs.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 977, doi. 10.1002/pssb.201451583

By:

Aleksiejūnas, R.;
Nomeika, K.;
Miasojedovas, S.;
Nargelas, S.;
Malinauskas, T.;
Jarašiūnas, K.;
Tuna, Ö.;
Heuken, M.

Publication type:

Article

Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 917, doi. 10.1002/pssb.201451585

By:

Yoshida, Hisashi;
Hikosaka, Toshiki;
Nago, Hajime;
Nunoue, Shinya

Publication type:

Article

Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 989, doi. 10.1002/pssb.201451586

By:

Upadhyay, Pankaj;
Meer, Mudassar;
Takhar, Kuldeep;
Khachariya, Dolar;
Kumar S, Akhil;
Banerjee, Debashree;
Ganguly, Swaroop;
Laha, Apurba;
Saha, Dipankar

Publication type:

Article

Transparent, conductive bulk GaN by high temperature ammonothermal growth.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1069, doi. 10.1002/pssb.201451587

By:

Jiang, Wenkan;
Ehrentraut, Dirk;
Cook, Jonathan;
Kamber, Derrick S.;
Pakalapati, Rajeev T.;
D'Evelyn, Mark P.

Publication type:

Article

Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 983, doi. 10.1002/pssb.201451588

By:

Baranowski, Michał;
Kudrawiec, Robert;
Misiewicz, Jan;
Turski, Henryk;
Skierbiszewski, Czesław

Publication type:

Article

Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1096, doi. 10.1002/pssb.201451589

By:

Coulon, Pierre‐Marie;
Alloing, Blandine;
Brändli, Virginie;
Lefebvre, Denis;
Chenot, Sébastien;
Zúñiga‐Pérez, Jesús

Publication type:

Article

Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 996, doi. 10.1002/pssb.201451468

By:

Osvald, J.;
Stoklas, R.;
Kordoš, P.

Publication type:

Article

Sixteen years GaN on Si.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1063, doi. 10.1002/pssb.201451656

By:

Dadgar, Armin

Publication type:

Article

Structural and optical properties of MBE-grown asymmetric cubic GaN/Al xGa1- xN double quantum wells.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 873, doi. 10.1002/pssb.201451531

By:

Wecker, T.;
Hörich, F.;
Feneberg, M.;
Goldhahn, R.;
Reuter, D.;
As, D. J.

Publication type:

Article

Contents.

Published in:: Physica Status Solidi (B), 2015, v. 252, n. 5, p. 845, doi. 10.1002/pssb.201570331
Publication type:: Article

Carrier distributions in InGaN/GaN light-emitting diodes.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 890, doi. 10.1002/pssb.201451534

By:

Hammersley, Simon;
Davies, Matthew J.;
Dawson, Philip;
Oliver, Rachel A.;
Kappers, Menno J.;
Humphreys, Colin J.

Publication type:

Article

Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1172, doi. 10.1002/pssb.201451604

By:

Sochacki, Tomasz;
Amilusik, Mikolaj;
Fijalkowski, Michal;
Iwinska, Malgorzata;
Lucznik, Boleslaw;
Weyher, Jan L.;
Kamler, Grzegorz;
Kucharski, Robert;
Grzegory, Izabella;
Bockowski, Michal

Publication type:

Article

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1180, doi. 10.1002/pssb.201451609

By:

Gridneva, E.;
Richter, E.;
Feneberg, M.;
Weyers, M.;
Goldhahn, R.;
Tränkle, G.

Publication type:

Article

Issue Information.

Published in:: 2015
Publication type:: Other

Recent and forthcoming publications in pss.

Published in:: 2015
Publication type:: Other

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 866, doi. 10.1002/pssb.201451535

By:

Davies, Matthew J.;
Dawson, Philip;
Massabuau, Fabien C.‐P.;
Fol, Adrian Le;
Oliver, Rachel A.;
Kappers, Menno J.;
Humphreys, Colin J.

Publication type:

Article

Nitride Semiconductors.

Published in:

2015

By:

Gorczyca, Izabela;
Suski, Tadeusz;
Hommel, Detlef;
Perlin, Piotr

Publication type:

Other

Nobel Lectures in Annalen der Physik.

Published in:: 2015
Publication type:: Other

Information for authors.

Published in:: 2015
Publication type:: Other

TiO thin films on GaN(0001).

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1001, doi. 10.1002/pssb.201451480

By:

Wasielewski, Radosław;
Mazur, Piotr;
Grodzicki, Miłosz;
Ciszewski, Antoni

Publication type:

Article

Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1109, doi. 10.1002/pssb.201451489

By:

Chen, Yingda;
Wu, Hualong;
Yue, Guanglong;
Chen, Zimin;
Zheng, Zhiyuan;
Wu, Zhisheng;
Wang, Gang;
Jiang, Hao

Publication type:

Article

Extending group-III nitrides to the infrared: Recent advances in InN.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1050, doi. 10.1002/pssb.201451628

By:

Mi, Zetian;
Zhao, Songrui

Publication type:

Article

Chemical understanding and utility of H3PO4 etching of group-III- nitrides.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1121, doi. 10.1002/pssb.201451504

By:

Reiner, Maria;
Reiss, Marcus;
Brünig, Thorge;
Knuuttila, Lauri;
Pietschnig, Rudolf;
Ostermaier, Clemens

Publication type:

Article

GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1127, doi. 10.1002/pssb.201451507

By:

Minamikawa, Daichi;
Ino, Masataka;
Kawai, Shunsuke;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Iwaya, Motoaki;
Akasaki, Isamu

Publication type:

Article

Self-organized growth of catalyst-free GaN nano- and micro-rods on Si(111) substrates by MOCVD.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1132, doi. 10.1002/pssb.201451508

By:

Foltynski, B.;
Giesen, C.;
Heuken, M.

Publication type:

Article

First-principles theory of acceptors in nitride semiconductors.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 900, doi. 10.1002/pssb.201552062

By:

Lyons, John L.;
Alkauskas, Audrius;
Janotti, Anderson;
Van de Walle, Chris G.

Publication type:

Article

Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1089, doi. 10.1002/pssb.201451571

By:

Li, Xiao‐Hang;
Wang, Shuo;
Xie, Hongen;
Wei, Yong O.;
Kao, Tsung‐Ting;
Satter, Md. Mahbub;
Shen, Shyh‐Chiang;
Douglas Yoder, Paul;
Detchprohm, Theeradetch;
Dupuis, Russell D.;
Fischer, Alec M.;
Ponce, Fernando A.

Publication type:

Article

Low defect large area semi-polar (11.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1104, doi. 10.1002/pssb.201451591

By:

Pristovsek, Markus;
Han, Yisong;
Zhu, Tongtong;
Frentrup, Martin;
Kappers, Menno J.;
Humphreys, Colin J.;
Kozlowski, Grzegorz;
Maaskant, Pleun;
Corbett, Brian

Publication type:

Article

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 895, doi. 10.1002/pssb.201451576

By:

Finken, Matthias;
Wille, Ada;
Reuters, Benjamin;
Heuken, Michael;
Kalisch, Holger;
Vescan, Andrei

Publication type:

Article

Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1017, doi. 10.1002/pssb.201451579

By:

Yamamoto, Shingo;
Kihara, Yuhei;
Shiojima, Kenji

Publication type:

Article

First-principles theory of acceptors in nitride semiconductors (Phys. Status Solidi B 5/2015).

Published in:

2015

By:

Lyons, John L.;
Alkauskas, Audrius;
Janotti, Anderson;
Van de Walle, Chris G.

Publication type:

Other

Extending group-III nitrides to the infrared: Recent advances in InN (Phys. Status Solidi B 5/2015).

Published in:

2015

By:

Mi, Zetian;
Zhao, Songrui

Publication type:

Other

Electrical characteristics of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1031, doi. 10.1002/pssb.201451590

By:

Aoki, Toshichika;
Tachibana, Sachi;
Shiojima, Kenji

Publication type:

Article

Schottky barrier height modulation at metal/n-GaN interface by BCl3/Ar plasma treatment.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1011, doi. 10.1002/pssb.201451577

By:

Ito, Toshihide;
Nunoue, Shinya

Publication type:

Article

Band gap bowing and optical polarization switching in Al.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 879, doi. 10.1002/pssb.201451593

By:

Coughlan, Conor;
Schulz, Stefan;
Caro, Miguel A.;
O'Reilly, Eoin P.

Publication type:

Article

Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence-band parameters in InGaN alloy material.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 885, doi. 10.1002/pssb.201451594

By:

Sakai, Shigeta;
Yamaguchi, Atsushi A.

Publication type:

Article

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111).

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1195, doi. 10.1002/pssb.201451596

By:

Wośko, Mateusz;
Paszkiewicz, Bogdan;
Vincze, Andrej;
Szymański, Tomasz;
Paszkiewicz, Regina

Publication type:

Article

Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1155, doi. 10.1002/pssb.201451597

By:

Bazioti, C.;
Papadomanolaki, E.;
Kehagias, Th.;
Androulidaki, M.;
Dimitrakopulos, G. P.;
Iliopoulos, E.

Publication type:

Article

Contactless electroreflectance studies of surface potential barrier in AlGaN/n-AlGaN structures with various Al concentrations.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1038, doi. 10.1002/pssb.201451598

By:

Janicki, Ł.;
Kudrawiec, R.;
Pakuła, K.;
Stępniewski, R.;
Misiewicz, J.

Publication type:

Article

Effect of sputtering power on surface characteristics and crystal quality of AlN films deposited by pulsed DC reactive sputtering.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1163, doi. 10.1002/pssb.201451599

By:

Takeuchi, Hiroto;
Ohtsuka, Makoto;
Fukuyama, Hiroyuki

Publication type:

Article

High-quality GaN film and AlGaN/GaN HEMT grown on 4-inch Si(110) substrates by MOCVD using an ultra-thin AlN/GaN superlattice interlayer.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1075, doi. 10.1002/pssb.201451478

By:

Shen, X. Q.;
Takahashi, T.;
Ide, T.;
Shimizu, M.

Publication type:

Article

Excitation-dependent carrier dynamics in Al-rich AlGaN layers and multiple quantum wells.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1043, doi. 10.1002/pssb.201451479

By:

Ščajev, Patrik;
Miasojedovas, Saulius;
Jarašiunas, Kestutis;
Hiramatsu, Kazumasa;
Miyake, Hideto;
Gil, Bernard

Publication type:

Article

Efficiency droop and carrier transport in AlGaN epilayers and heterostructures.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 961, doi. 10.1002/pssb.201451542

By:

Mickevičius, J.;
Tamulaitis, G.;
Jurkevičius, J.;
Shur, M. S.;
Shatalov, M.;
Yang, J.;
Gaska, R.

Publication type:

Article

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 928, doi. 10.1002/pssb.201451543

By:

Massabuau, F. C.‐P.;
Davies, M. J.;
Blenkhorn, W. E.;
Hammersley, S.;
Kappers, M. J.;
Humphreys, C. J.;
Dawson, P.;
Oliver, R. A.

Publication type:

Article

First-principles investigation of the GaN growth process in carbon-added Na-flux method.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1084, doi. 10.1002/pssb.201451546

By:

Kawamura, Takahiro;
Imabayashi, Hiroki;
Maruyama, Mihoko;
Imade, Mamoru;
Yoshimura, Masashi;
Mori, Yusuke;
Morikawa, Yoshitada

Publication type:

Article

Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 946, doi. 10.1002/pssb.201451497

By:

Prudaev, Ilya;
Sarkisov, Sergey;
Tolbanov, Oleg;
Kosobutsky, Alexey

Publication type:

Article

Thick (~1 μm) p-type In xGa1- xN ( x ~ 0.36) grown by MOVPE at a low temperature (~570 °C).

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 909, doi. 10.1002/pssb.201451736

By:

Yamamoto, A.;
Hasan, T. Md.;
Kodama, K.;
Shigekawa, N.;
Kuzuhara, M.

Publication type:

Article