Works matching IS 03701972 AND DT 2014 AND VI 251 AND IP 11

Results: 33

Optical and EPR characterization of Er3+ centers in SrTiO3 single crystals.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2270, doi. 10.1002/pssb.201451135

By:

Skvortsov, Alexander;
Savchenko, Dariya;
Potucek, Zdenek;
Jastrabik, Lubomir;
Trepakov, Vladimir;
Dejneka, Alexandr

Publication type:

Article

Effects of Al-Mn co-doping on magnetic properties of semiconducting oxide thin films.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2274, doi. 10.1002/pssb.201451115

By:

Hong, Nguyen Hoa;
Shaidiuk, Viacheslav;
Atabaev, Timur Sh.;
Ciftja, Orion;
Kurisu, Makio;
Kim, Hyung‐Kook;
Hwang, Yoon‐Hwae

Publication type:

Article

Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2193, doi. 10.1002/pssb.201400066

By:

Cerbu, F.;
Nguyen, A. P. D.;
Kepa, J.;
Afanas'ev, V. V.;
Stesmans, A.

Publication type:

Article

Molecular dynamics simulations on the oxidation of Si(100)/SiO2 interface: Emissions and incorporations of Si-related species into the SiO2 and substrate.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2169, doi. 10.1002/pssb.201400068

By:

Takahashi, Norihiko;
Yamasaki, Takahiro;
Kaneta, Chioko

Publication type:

Article

Multiple structural forms of a vacancy in silicon as evidenced by vacancy profiles produced by rapid thermal annealing.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2179, doi. 10.1002/pssb.201400014

By:

Voronkov, Vladimir;
Falster, Robert

Publication type:

Article

Molybdenum nano-precipitates in silicon: A TEM and DLTS study.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2201, doi. 10.1002/pssb.201400065

By:

Leonard, Simon;
Markevich, Vladimir P.;
Peaker, Anthony R.;
Hamilton, Bruce;
Youssef, Khaled;
Rozgonyi, George

Publication type:

Article

Influence of crystal field excitations on thermal and electrical resistivity of normal rare-earth metals.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2265, doi. 10.1002/pssb.201451231

By:

Durczewski, K.;
Gajek, Z.;
Mucha, J.

Publication type:

Article

Inclined dislocations in plates.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2307, doi. 10.1002/pssb.201451118

By:

Bonnet, Roland;
Neily, Salem;
Youssef, Sami

Publication type:

Article

New Green's function approach describing the ferromagnetic state in the Hubbard model with correlated hopping.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2294, doi. 10.1002/pssb.201350313

By:

Górski, Grzegorz;
Mizia, Jerzy;
Kucab, Krzysztof

Publication type:

Article

Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2197, doi. 10.1002/pssb.201400155

By:

Quemener, V.;
Raeissi, B.;
Herklotz, F.;
Murin, L. I.;
Monakhov, E. V.;
Svensson, B. G.

Publication type:

Article

Intrinsic defects, nonstoichiometry, and aliovalent doping of A.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2279, doi. 10.1002/pssb.201451064

By:

Casillas‐Trujillo, L.;
Andersson, D. A.;
Dorado, B.;
Nikl, M.;
Sickafus, K. E.;
McClellan, K. J.;
Stanek, C. R.

Publication type:

Article

An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2185, doi. 10.1002/pssb.201400025

By:

Kamiyama, Eiji;
Sueoka, Koji;
Vanhellemont, Jan

Publication type:

Article

Self-consistent analysis of InAsSb quantum-well heterostructures.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2287, doi. 10.1002/pssb.201451300

By:

Zhang, Yuwei;
Zhang, Yang;
Guan, Min;
Cui, Lijie;
Wang, Chengyan;
Zeng, Yiping

Publication type:

Article

Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2205, doi. 10.1002/pssb.201400038

By:

Inoue, Naohisa;
Goto, Yasunori;
Sugiyama, Takahide;
Watanabe, Kaori;
Seki, Hirofumi;
Kawamura, Yuichi

Publication type:

Article

Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2321, doi. 10.1002/pssb.201451252

By:

Tischer, Ingo;
Frey, Manuel;
Hocker, Matthias;
Jerg, Lisa;
Madel, Manfred;
Neuschl, Benjamin;
Thonke, Klaus;
Leute, Robert A.R.;
Scholz, Ferdinand;
Groiss, Heiko;
Müller, Erich;
Gerthsen, Dagmar

Publication type:

Article

Detailed photoluminescence study of vapor deposited.

Published in:

2014

By:

Sträter, Hendrik;
ten Haaf, Sebastian;
Brüggemann, Rudolf;
Jakob, Gerhard;
Nilius, Niklas;
Bauer, Gottfried H.

Publication type:

Other

Strain isolation: A simple mechanism for understanding and detecting structures of zero Poisson's ratio.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2239, doi. 10.1002/pssb.201451376

By:

Wang, Ningling;
Liu, Wangyu;
Tang, Aimin;
Huang, Jiele;
Lin, Zhenqiong;
Lei, Shuwen

Publication type:

Article

Energy band structures of group IV compound semiconductors for solar cells.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2221, doi. 10.1002/pssb.201400030

By:

Suwa, Ryo;
Sueoka, Koji;
Kamiyama, Eiji

Publication type:

Article

Contents.

Published in:: Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2153, doi. 10.1002/pssb.201470170
Publication type:: Article

Information for authors.

Published in:: 2014
Publication type:: Other

Chiral and non-chiral p-wave superconducting states from correlated hopping interactions.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2302, doi. 10.1002/pssb.201451107

By:

Millán, J. S.;
Pérez, L. A.;
Wang, C.

Publication type:

Article

Unified bandgap engineering of graphene nanoribbons.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2257, doi. 10.1002/pssb.201451005

By:

Arora, Vijay K.;
Bhattacharyya, Arkaprava

Publication type:

Article

Recent and forthcoming publications in pss.

Published in:: 2014
Publication type:: Other

DLTS characterization of proton-implanted silicon under varying annealing conditions.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2189, doi. 10.1002/pssb.201400028

By:

Laven, J. G.;
Jelinek, M.;
Job, R.;
Schustereder, W.;
Schulze, H.‐J.;
Rommel, M.;
Frey, L.

Publication type:

Article

Detailed photoluminescence study of vapor deposited.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2247, doi. 10.1002/pssb.201451271

By:

Sträter, Hendrik;
ten Haaf, Sebastian;
Brüggemann, Rudolf;
Jakob, Gerhard;
Nilius, Niklas;
Bauer, Gottfried H.

Publication type:

Article

Auxetic properties of cubic metal single crystals.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2314, doi. 10.1002/pssb.201451129

By:

Krasavin, Victor V.;
Krasavin, Alexey V.

Publication type:

Article

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2159, doi. 10.1002/pssb.201400022

By:

Sueoka, Koji;
Kamiyama, Eiji;
Vanhellemont, Jan;
Nakamura, Kozo

Publication type:

Article

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon (Phys. Status Solidi B 11/2014).

Published in:

2014

By:

Sueoka, Koji;
Kamiyama, Eiji;
Vanhellemont, Jan;
Nakamura, Kozo

Publication type:

Other

Tuning silicon quantum dot luminescence via surface groups.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2216, doi. 10.1002/pssb.201400026

By:

Dasog, Mita;
Veinot, Jonathan G. C.

Publication type:

Article

Issue Information.

Published in:: 2014
Publication type:: Other

Mesh versus meshless method of elastic displacement determination in a common and an auxetic material.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2225, doi. 10.1002/pssb.201484261

By:

Walczak, T.;
Sypniewska‐Kamińska, G.;
Maruszewski, B. T.;
Wojciechowski, K. W.

Publication type:

Article

Foams as 3D perforated systems: An analysis of their Poisson's ratios under compression.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2233, doi. 10.1002/pssb.201484262

By:

Brincat, Jean‐Pierre;
Azzopardi, Keith M.;
Buttigieg, Alistair;
Scarpa, Fabrizio;
Grima, Joseph N.;
Gatt, Ruben

Publication type:

Article

Charge transition level of GePb1 centers at interfaces of SiO2/Ge xSi1− x/SiO2 heterostructures investigated by positron annihilation spectroscopy.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2211, doi. 10.1002/pssb.201400040

By:

Madia, O.;
Segercrantz, N.;
Afanas'ev, V.;
Stesmans, A.;
Souriau, L.;
Slotte, J.;
Tuomisto, F.

Publication type:

Article

Works matching IS 03701972 AND DT 2014 AND VI 251 AND IP 11

Optical and EPR characterization of Er<sup>3+</sup> centers in SrTiO<sub>3</sub> single crystals.

Effects of Al-Mn co-doping on magnetic properties of semiconducting oxide thin films.

Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging.

Molecular dynamics simulations on the oxidation of Si(100)/SiO<sub>2</sub> interface: Emissions and incorporations of Si-related species into the SiO<sub>2</sub> and substrate.

Multiple structural forms of a vacancy in silicon as evidenced by vacancy profiles produced by rapid thermal annealing.

Molybdenum nano-precipitates in silicon: A TEM and DLTS study.

Influence of crystal field excitations on thermal and electrical resistivity of normal rare-earth metals.

Inclined dislocations in plates.

New Green's function approach describing the ferromagnetic state in the Hubbard model with correlated hopping.

Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon.

Intrinsic defects, nonstoichiometry, and aliovalent doping of A.

An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si.

Self-consistent analysis of InAsSb quantum-well heterostructures.

Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal.

Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution.

Detailed photoluminescence study of vapor deposited.

Strain isolation: A simple mechanism for understanding and detecting structures of zero Poisson's ratio.

Energy band structures of group IV compound semiconductors for solar cells.

Contents.

Information for authors.

Chiral and non-chiral p-wave superconducting states from correlated hopping interactions.

Unified bandgap engineering of graphene nanoribbons.

Recent and forthcoming publications in pss.

DLTS characterization of proton-implanted silicon under varying annealing conditions.

Detailed photoluminescence study of vapor deposited.

Auxetic properties of cubic metal single crystals.

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon.

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon (Phys. Status Solidi B 11/2014).

Tuning silicon quantum dot luminescence via surface groups.

Issue Information.

Mesh versus meshless method of elastic displacement determination in a common and an auxetic material.

Foams as 3D perforated systems: An analysis of their Poisson's ratios under compression.

Charge transition level of GeP<sub>b1</sub> centers at interfaces of SiO<sub>2</sub>/Ge<sub> x</sub>Si<sub>1− x</sub>/SiO<sub>2</sub> heterostructures investigated by positron annihilation spectroscopy.