Works matching IS 03701972 AND DT 2014 AND VI 251 AND IP 11

Results: 33

Molybdenum nano-precipitates in silicon: A TEM and DLTS study.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2201, doi. 10.1002/pssb.201400065
By:
- Leonard, Simon;
- Markevich, Vladimir P.;
- Peaker, Anthony R.;
- Hamilton, Bruce;
- Youssef, Khaled;
- Rozgonyi, George
Publication type:
Article
Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2193, doi. 10.1002/pssb.201400066
By:
- Cerbu, F.;
- Nguyen, A. P. D.;
- Kepa, J.;
- Afanas'ev, V. V.;
- Stesmans, A.
Publication type:
Article
Molecular dynamics simulations on the oxidation of Si(100)/SiO2 interface: Emissions and incorporations of Si-related species into the SiO2 and substrate.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2169, doi. 10.1002/pssb.201400068
By:
- Takahashi, Norihiko;
- Yamasaki, Takahiro;
- Kaneta, Chioko
Publication type:
Article
Multiple structural forms of a vacancy in silicon as evidenced by vacancy profiles produced by rapid thermal annealing.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2179, doi. 10.1002/pssb.201400014
By:
- Voronkov, Vladimir;
- Falster, Robert
Publication type:
Article
Influence of crystal field excitations on thermal and electrical resistivity of normal rare-earth metals.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2265, doi. 10.1002/pssb.201451231
By:
- Durczewski, K.;
- Gajek, Z.;
- Mucha, J.
Publication type:
Article
Effects of Al-Mn co-doping on magnetic properties of semiconducting oxide thin films.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2274, doi. 10.1002/pssb.201451115
By:
- Hong, Nguyen Hoa;
- Shaidiuk, Viacheslav;
- Atabaev, Timur Sh.;
- Ciftja, Orion;
- Kurisu, Makio;
- Kim, Hyung‐Kook;
- Hwang, Yoon‐Hwae
Publication type:
Article
Inclined dislocations in plates.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2307, doi. 10.1002/pssb.201451118
By:
- Bonnet, Roland;
- Neily, Salem;
- Youssef, Sami
Publication type:
Article
Self-consistent analysis of InAsSb quantum-well heterostructures.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2287, doi. 10.1002/pssb.201451300
By:
- Zhang, Yuwei;
- Zhang, Yang;
- Guan, Min;
- Cui, Lijie;
- Wang, Chengyan;
- Zeng, Yiping
Publication type:
Article
New Green's function approach describing the ferromagnetic state in the Hubbard model with correlated hopping.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2294, doi. 10.1002/pssb.201350313
By:
- Górski, Grzegorz;
- Mizia, Jerzy;
- Kucab, Krzysztof
Publication type:
Article
Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2197, doi. 10.1002/pssb.201400155
By:
- Quemener, V.;
- Raeissi, B.;
- Herklotz, F.;
- Murin, L. I.;
- Monakhov, E. V.;
- Svensson, B. G.
Publication type:
Article
Optical and EPR characterization of Er3+ centers in SrTiO3 single crystals.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2270, doi. 10.1002/pssb.201451135
By:
- Skvortsov, Alexander;
- Savchenko, Dariya;
- Potucek, Zdenek;
- Jastrabik, Lubomir;
- Trepakov, Vladimir;
- Dejneka, Alexandr
Publication type:
Article
Strain isolation: A simple mechanism for understanding and detecting structures of zero Poisson's ratio.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2239, doi. 10.1002/pssb.201451376
By:
- Wang, Ningling;
- Liu, Wangyu;
- Tang, Aimin;
- Huang, Jiele;
- Lin, Zhenqiong;
- Lei, Shuwen
Publication type:
Article
Energy band structures of group IV compound semiconductors for solar cells.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2221, doi. 10.1002/pssb.201400030
By:
- Suwa, Ryo;
- Sueoka, Koji;
- Kamiyama, Eiji
Publication type:
Article
Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2205, doi. 10.1002/pssb.201400038
By:
- Inoue, Naohisa;
- Goto, Yasunori;
- Sugiyama, Takahide;
- Watanabe, Kaori;
- Seki, Hirofumi;
- Kawamura, Yuichi
Publication type:
Article
Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2321, doi. 10.1002/pssb.201451252
By:
- Tischer, Ingo;
- Frey, Manuel;
- Hocker, Matthias;
- Jerg, Lisa;
- Madel, Manfred;
- Neuschl, Benjamin;
- Thonke, Klaus;
- Leute, Robert A.R.;
- Scholz, Ferdinand;
- Groiss, Heiko;
- Müller, Erich;
- Gerthsen, Dagmar
Publication type:
Article
Intrinsic defects, nonstoichiometry, and aliovalent doping of A.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2279, doi. 10.1002/pssb.201451064
By:
- Casillas‐Trujillo, L.;
- Andersson, D. A.;
- Dorado, B.;
- Nikl, M.;
- Sickafus, K. E.;
- McClellan, K. J.;
- Stanek, C. R.
Publication type:
Article
Contents.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2153, doi. 10.1002/pssb.201470170
Publication type:
Article
Recent and forthcoming publications in pss.
Published in:
2014
Publication type:
Other
Information for authors.
Published in:
2014
Publication type:
Other
Detailed photoluminescence study of vapor deposited.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2247, doi. 10.1002/pssb.201451271
By:
- Sträter, Hendrik;
- ten Haaf, Sebastian;
- Brüggemann, Rudolf;
- Jakob, Gerhard;
- Nilius, Niklas;
- Bauer, Gottfried H.
Publication type:
Article
Chiral and non-chiral p-wave superconducting states from correlated hopping interactions.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2302, doi. 10.1002/pssb.201451107
By:
- Millán, J. S.;
- Pérez, L. A.;
- Wang, C.
Publication type:
Article
Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2159, doi. 10.1002/pssb.201400022
By:
- Sueoka, Koji;
- Kamiyama, Eiji;
- Vanhellemont, Jan;
- Nakamura, Kozo
Publication type:
Article
An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2185, doi. 10.1002/pssb.201400025
By:
- Kamiyama, Eiji;
- Sueoka, Koji;
- Vanhellemont, Jan
Publication type:
Article
Tuning silicon quantum dot luminescence via surface groups.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2216, doi. 10.1002/pssb.201400026
By:
- Dasog, Mita;
- Veinot, Jonathan G. C.
Publication type:
Article
DLTS characterization of proton-implanted silicon under varying annealing conditions.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2189, doi. 10.1002/pssb.201400028
By:
- Laven, J. G.;
- Jelinek, M.;
- Job, R.;
- Schustereder, W.;
- Schulze, H.‐J.;
- Rommel, M.;
- Frey, L.
Publication type:
Article
Auxetic properties of cubic metal single crystals.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2314, doi. 10.1002/pssb.201451129
By:
- Krasavin, Victor V.;
- Krasavin, Alexey V.
Publication type:
Article
Unified bandgap engineering of graphene nanoribbons.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2257, doi. 10.1002/pssb.201451005
By:
- Arora, Vijay K.;
- Bhattacharyya, Arkaprava
Publication type:
Article
Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon (Phys. Status Solidi B 11/2014).
Published in:
2014
By:
- Sueoka, Koji;
- Kamiyama, Eiji;
- Vanhellemont, Jan;
- Nakamura, Kozo
Publication type:
Other
Detailed photoluminescence study of vapor deposited.
Published in:
2014
By:
- Sträter, Hendrik;
- ten Haaf, Sebastian;
- Brüggemann, Rudolf;
- Jakob, Gerhard;
- Nilius, Niklas;
- Bauer, Gottfried H.
Publication type:
Other
Issue Information.
Published in:
2014
Publication type:
Other
Mesh versus meshless method of elastic displacement determination in a common and an auxetic material.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2225, doi. 10.1002/pssb.201484261
By:
- Walczak, T.;
- Sypniewska‐Kamińska, G.;
- Maruszewski, B. T.;
- Wojciechowski, K. W.
Publication type:
Article
Foams as 3D perforated systems: An analysis of their Poisson's ratios under compression.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2233, doi. 10.1002/pssb.201484262
By:
- Brincat, Jean‐Pierre;
- Azzopardi, Keith M.;
- Buttigieg, Alistair;
- Scarpa, Fabrizio;
- Grima, Joseph N.;
- Gatt, Ruben
Publication type:
Article
Charge transition level of GePb1 centers at interfaces of SiO2/Ge xSi1− x/SiO2 heterostructures investigated by positron annihilation spectroscopy.
Published in:
Physica Status Solidi (B), 2014, v. 251, n. 11, p. 2211, doi. 10.1002/pssb.201400040
By:
- Madia, O.;
- Segercrantz, N.;
- Afanas'ev, V.;
- Stesmans, A.;
- Souriau, L.;
- Slotte, J.;
- Tuomisto, F.
Publication type:
Article

Works matching IS 03701972 AND DT 2014 AND VI 251 AND IP 11

Molybdenum nano-precipitates in silicon: A TEM and DLTS study.

Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging.

Molecular dynamics simulations on the oxidation of Si(100)/SiO<sub>2</sub> interface: Emissions and incorporations of Si-related species into the SiO<sub>2</sub> and substrate.

Multiple structural forms of a vacancy in silicon as evidenced by vacancy profiles produced by rapid thermal annealing.

Influence of crystal field excitations on thermal and electrical resistivity of normal rare-earth metals.

Effects of Al-Mn co-doping on magnetic properties of semiconducting oxide thin films.

Inclined dislocations in plates.

Self-consistent analysis of InAsSb quantum-well heterostructures.

New Green's function approach describing the ferromagnetic state in the Hubbard model with correlated hopping.

Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon.

Optical and EPR characterization of Er<sup>3+</sup> centers in SrTiO<sub>3</sub> single crystals.

Strain isolation: A simple mechanism for understanding and detecting structures of zero Poisson's ratio.

Energy band structures of group IV compound semiconductors for solar cells.

Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal.

Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution.

Intrinsic defects, nonstoichiometry, and aliovalent doping of A.

Contents.

Recent and forthcoming publications in pss.

Information for authors.

Detailed photoluminescence study of vapor deposited.

Chiral and non-chiral p-wave superconducting states from correlated hopping interactions.

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon.

An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si.

Tuning silicon quantum dot luminescence via surface groups.

DLTS characterization of proton-implanted silicon under varying annealing conditions.

Auxetic properties of cubic metal single crystals.

Unified bandgap engineering of graphene nanoribbons.

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon (Phys. Status Solidi B 11/2014).

Detailed photoluminescence study of vapor deposited.

Issue Information.

Mesh versus meshless method of elastic displacement determination in a common and an auxetic material.

Foams as 3D perforated systems: An analysis of their Poisson's ratios under compression.

Charge transition level of GeP<sub>b1</sub> centers at interfaces of SiO<sub>2</sub>/Ge<sub> x</sub>Si<sub>1− x</sub>/SiO<sub>2</sub> heterostructures investigated by positron annihilation spectroscopy.