Works matching IS 03701972 AND DT 2012 AND VI 249 AND IP 4
Results: 37
Recent developments in Ge dots grown on pit-patterned surfaces.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 764, doi. 10.1002/pssb.201100779
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Ground-state structure of KNbO<sub>3</sub>/KTaO<sub>3</sub> superlattices: Array of nearly independent ferroelectrically ordered planes.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 789, doi. 10.1002/pssb.201147350
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Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 834, doi. 10.1002/pssb.201147460
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Ultraviolet to near-infrared downconversion in Yb<sup>3+</sup>-doped Sr<sub>2</sub>CeO<sub>4</sub>.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 818, doi. 10.1002/pssb.201147431
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Goos-Hänchen shifts of the reflected waves from the inhomogeneous slab with a positive and negative index transition layer.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 829, doi. 10.1002/pssb.201147413
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Controlling quantum dot emission by integration of semiconductor nanomembranes onto piezoelectric actuators.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 687, doi. 10.1002/pssb.201100775
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Thermodynamic stability of BaTiO<sub>3</sub> (110) surfaces.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 796, doi. 10.1002/pssb.201147358
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Back Cover: Plasmonic antennas, positioning, and coupling of individual quantum systems (Phys. Status Solidi B 4/2012).
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. n/a, doi. 10.1002/pssb.201290007
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Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 779, doi. 10.1002/pssb.201147452
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Growth and spectroscopy of single lateral InGaAs/GaAs quantum dot molecules.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 710, doi. 10.1002/pssb.201100800
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Plasmonic antennas, positioning, and coupling of individual quantum systems.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 666, doi. 10.1002/pssb.201100781
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Towards electrical detection of plasmons in all-silicon pin-diodes.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 773, doi. 10.1002/pssb.201100774
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Single molecule electrical excitation.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 653, doi. 10.1002/pssb.201100778
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Preface.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 643, doi. 10.1002/pssb.201240914
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Electronic structure and optical spectroscopy studies of HoNi<sub>5</sub> and ErNi<sub>5</sub> compounds doped with Cu.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 824, doi. 10.1002/pssb.201147342
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Infrared phonon modes and dielectric properties of La<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub>: Comparing thin film to bulk material.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 854, doi. 10.1002/pssb.201147313
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On the theory of indirect exchange in EuO.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 847, doi. 10.1002/pssb.201147317
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Front Cover: Positioning of single nanostructures - single quantum devices (Phys. Status Solidi B 4/2012).
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. n/a, doi. 10.1002/pssb.201290006
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Recent and forthcoming publications in pss.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 642, doi. 10.1002/pssb.201240913
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- Article
Vertically stacked and laterally ordered InP and In(Ga)As quantum dots for quantum gate applications.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 737, doi. 10.1002/pssb.201100814
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Quantum state tomography measurements on strain-tuned In<sub> x</sub>Ga<sub>1− x</sub>As/GaAs quantum dots.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 697, doi. 10.1002/pssb.201100777
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Positioning plasmonic nanostructures on single quantum emitters.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 678, doi. 10.1002/pssb.201100788
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Half metallicity through wide range of lattice constants in Heusler alloys Co<sub>2</sub>MnGa<sub>1− x</sub>Ge<sub> x</sub>: First-principles calculations.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 840, doi. 10.1002/pssb.201147433
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Metal-semiconductor transition in Sm<sub> x</sub>Mn<sub>1− x</sub>S solid solutions.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 812, doi. 10.1002/pssb.201147327
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Content (Phys. Status Solidi B 4/2012).
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 637, doi. 10.1002/pssb.201240912
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- Article
Optical investigations on single vertically coupled InP/GaInP quantum dot pairs.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 747, doi. 10.1002/pssb.201200004
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Epitaxial growth of lateral quantum dot molecules.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 702, doi. 10.1002/pssb.201100772
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Transient absorption spectroscopy of a single lateral InGaAs quantum dot molecule.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 731, doi. 10.1002/pssb.201100783
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The role of oxygen-induced processes on the emission characteristics of single molecule emitters.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 661, doi. 10.1002/pssb.201100794
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Ultrafast coherent spectroscopy of a single self-assembled quantum dot.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 721, doi. 10.1002/pssb.201100776
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Quantification of impurity concentration in Cu<sub>2</sub>O and CuO via secondary ion mass spectrometry.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 801, doi. 10.1002/pssb.201147407
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Magnetic resonance of a highly symmetric metamaterial at microwave frequency.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 858, doi. 10.1002/pssb.201147326
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First-principles studies of structural and electronic properties of layered C<sub>3</sub>N phases.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 784, doi. 10.1002/pssb.201147319
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Issue Information.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. n/a, doi. 10.1002/pssb.201290008
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Information for authors.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 862, doi. 10.1002/pssb.201240915
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- Article
Electroluminescence properties of organic nanostructures studied by scanning tunnelling microscopy.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 644, doi. 10.1002/pssb.201100805
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Site-controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices.
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- Physica Status Solidi (B), 2012, v. 249, n. 4, p. 752, doi. 10.1002/pssb.201100771
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