Works matching IS 03701972 AND DT 2008 AND VI 245 AND IP 7

Results: 23

Epitaxial graphene: a new material.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1436, doi. 10.1002/pssb.200844143

By:

Seyller, Th.;
Bostwick, A.;
Emtsev, K. V.;
Horn, K.;
Ley, L.;
McChesney, J. L.;
Ohta, T.;
Riley, J. D.;
Rotenberg, E.;
Speck, F.

Publication type:

Article

Preface: phys. stat. sol. (b) 245/7.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1221, doi. 10.1002/pssb.200840524

By:

Ley, Lothar;
Pensl, Gerhard

Publication type:

Article

Recent and forthcoming publications in pss: phys. stat. sol. (b) 245/7.

Published in:: Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1220, doi. 10.1002/pssb.200840523
Publication type:: Article

Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1390, doi. 10.1002/pssb.200844062

By:

Krieger, M.;
Beljakowa, S.;
Trapaidze, L.;
Frank, T.;
Weber, H. B.;
Pensl, G.;
Hatta, N.;
Abe, M.;
Nagasawa, H.;
Schöner, A.

Publication type:

Article

Optical properties of as-grown and process-induced stacking faults in 4H-SiC.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1337, doi. 10.1002/pssb.200844055

By:

Camassel, J.;
Juillaguet, S.

Publication type:

Article

Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1281, doi. 10.1002/pssb.200844048

By:

Bockstedte, Michel;
Gali, Adam;
Mattausch, Alexander;
Pankratov, Oleg;
Steeds, John W.

Publication type:

Article

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1239, doi. 10.1002/pssb.200743520

By:

Sakwe, Sakwe Aloysius;
Stockmeier, Mathias;
Hens, Philip;
Müller, Ralf;
Queren, Desirée;
Kunecke, Ulrike;
Konias, Katja;
Hock, Rainer;
Magerl, Andreas;
Pons, Michel;
Winnacker, Albrecht;
Wellmann, Peter

Publication type:

Article

Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1378, doi. 10.1002/pssb.200844011

By:

Pensl, Gerhard;
Beljakowa, Svetlana;
Frank, Thomas;
Gao, Kunyuan;
Speck, Florian;
Seyller, Thomas;
Ley, Lothar;
Ciobanu, Florin;
Afanas'ev, Valery;
Stesmans, Andre;
Kimoto, Tsunenobu;
Schöner, Adolf

Publication type:

Article

EPR identification of intrinsic defects in SiC.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1298, doi. 10.1002/pssb.200844209

By:

Isoya, J.;
Umeda, T.;
Mizuochi, N.;
Son, N. T.;
Janzén, E.;
Ohshima, T.

Publication type:

Article

Micro- and nanomechanical structures for silicon carbide MEMS and NEMS.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1404, doi. 10.1002/pssb.200844135

By:

Zorman, Christian A.;
Parro, Rocco J.

Publication type:

Article

Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1369, doi. 10.1002/pssb.200844083

By:

Reshanov, Sergey A.;
Emtsev, Konstantin V.;
Speck, Florian;
Gao, Kun-Yuan;
Seyller, Thomas K.;
Pensl, Gerhard;
Ley, Lothar

Publication type:

Article

Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1327, doi. 10.1002/pssb.200844076

By:

Kimoto, Tsunenobu;
Danno, Katsunori;
Suda, Jun

Publication type:

Article

Contents: phys. stat. sol. (b) 245/7.

Published in:: Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1213, doi. 10.1002/pssb.200840522
Publication type:: Article

Density functional study of graphene overlayers on SiC.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1425, doi. 10.1002/pssb.200844031

By:

Mattausch, Alexander;
Pankratov, Oleg

Publication type:

Article

Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1272, doi. 10.1002/pssb.200844053

By:

Nagasawa, Hiroyuki;
Abe, Masayuki;
Yagi, Kuniaki;
Kawahara, Takamitsu;
Hatta, Naoki

Publication type:

Article

Comparative columnar porous etching studies on n-type 6H SiC crystalline faces.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1396, doi. 10.1002/pssb.200844024

By:

Ke, Y.;
Devaty, R. P.;
Choyke, W. J.

Publication type:

Article

Cover Picture: phys. stat. sol. (b) 245/7.

Published in:: Physica Status Solidi (B), 2008, v. 245, n. 7, p. n/a, doi. 10.1002/pssb.200890015
Publication type:: Article

Present status and future prospects for electronics in electric vehicles/hybrid electric vehicles and expectations for wide-bandgap semiconductor devices.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1223, doi. 10.1002/pssb.200844079

By:

Hamada, Kimimori

Publication type:

Article

Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1257, doi. 10.1002/pssb.200743508

By:

Epelbaum, B. M.;
Filip, O.;
Winnacker, A.

Publication type:

Article

Silicon carbide power-device products - Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1232, doi. 10.1002/pssb.200743478

By:

Friedrichs, P.

Publication type:

Article

Characterization of defects in silicon carbide by Raman spectroscopy.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1356, doi. 10.1002/pssb.200844052

By:

Hundhausen, M.;
Püsche, R.;
Röhrl, J.;
Ley, L.

Publication type:

Article

Information for authors: phys. stat. sol. (b) 245/7.

Published in:: Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1447, doi. 10.1002/pssb.200840525
Publication type:: Article

Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1315, doi. 10.1002/pssb.200743510

By:

Rambach, M.;
Bauer, A. J.;
Ryssel, H.

Publication type:

Article