Works matching IS 03701972 AND DT 2008 AND VI 245 AND IP 7
Results: 23
Epitaxial graphene: a new material.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1436, doi. 10.1002/pssb.200844143
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- Article
Preface: phys. stat. sol. (b) 245/7.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1221, doi. 10.1002/pssb.200840524
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Recent and forthcoming publications in pss: phys. stat. sol. (b) 245/7.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1220, doi. 10.1002/pssb.200840523
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- Article
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1390, doi. 10.1002/pssb.200844062
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- Article
Optical properties of as-grown and process-induced stacking faults in 4H-SiC.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1337, doi. 10.1002/pssb.200844055
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- Article
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1281, doi. 10.1002/pssb.200844048
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- Article
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1239, doi. 10.1002/pssb.200743520
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Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1378, doi. 10.1002/pssb.200844011
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- Article
EPR identification of intrinsic defects in SiC.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1298, doi. 10.1002/pssb.200844209
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- Article
Micro- and nanomechanical structures for silicon carbide MEMS and NEMS.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1404, doi. 10.1002/pssb.200844135
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- Article
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1369, doi. 10.1002/pssb.200844083
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- Article
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1327, doi. 10.1002/pssb.200844076
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- Article
Contents: phys. stat. sol. (b) 245/7.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1213, doi. 10.1002/pssb.200840522
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- Article
Density functional study of graphene overlayers on SiC.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1425, doi. 10.1002/pssb.200844031
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Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1272, doi. 10.1002/pssb.200844053
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- Article
Comparative columnar porous etching studies on n-type 6H SiC crystalline faces.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1396, doi. 10.1002/pssb.200844024
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Cover Picture: phys. stat. sol. (b) 245/7.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. n/a, doi. 10.1002/pssb.200890015
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- Article
Present status and future prospects for electronics in electric vehicles/hybrid electric vehicles and expectations for wide-bandgap semiconductor devices.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1223, doi. 10.1002/pssb.200844079
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- Article
Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1257, doi. 10.1002/pssb.200743508
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- Article
Silicon carbide power-device products - Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1232, doi. 10.1002/pssb.200743478
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Information for authors: phys. stat. sol. (b) 245/7.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1447, doi. 10.1002/pssb.200840525
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- Article
Characterization of defects in silicon carbide by Raman spectroscopy.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1356, doi. 10.1002/pssb.200844052
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- Article
Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1315, doi. 10.1002/pssb.200743510
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- Article