Works matching IS 03701972 AND DT 2007 AND VI 244 AND IP 8
Results: 30
Self-organization and finite size effects in epitaxial ferromagnetic MnAs films on GaAs.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2936, doi. 10.1002/pssb.200675611
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- Article
Semiconductor heterostructure studies using emerging technologies.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2988, doi. 10.1002/pssb.200675622
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Optical analysis of dislocation-related physical processes in GaN-based epilayers.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2878, doi. 10.1002/pssb.200675604
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Coherent and ultrafast optoelectronics in III-V semiconductor compounds.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2971, doi. 10.1002/pssb.200675615
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Spin-dependent electron tunnelling and spin relaxation in quantum dots in regime with filling factor of around two.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2950, doi. 10.1002/pssb.200775627
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Direct synthesis of II-VI compound nanocrystals in polymer matrix.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2768, doi. 10.1002/pssb.200675608
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Microcavity modified spontaneous emission of single quantum dots.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2792, doi. 10.1002/pssb.200675619
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Special Issue: Frontiers in Molecular-Beam Epitaxy toward Novel Devices.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. n/a, doi. 10.1002/pssb.200790009
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Spin lifetime of (In,Ga)As/GaAs (110) quantum wells.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2960, doi. 10.1002/pssb.200775626
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Area selective growth of GaAs by migration-enhanced epitaxy.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2697, doi. 10.1002/pssb.200675621
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- Article
Low-refractive-index materials: A new class of optical thin-film materials.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 3002, doi. 10.1002/pssb.200675603
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Physics, growth, and performance of (In,Ga)As-AlP/InP quantum-cascade lasers emitting at λ < 4 μm.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2906, doi. 10.1002/pssb.200675614
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Progress in the growth of nonpolar gallium nitride.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2847, doi. 10.1002/pssb.200675625
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- Article
Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2838, doi. 10.1002/pssb.200675610
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- Article
(Al,In,Ga)N-based photodetectors. Some materials issues.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2859, doi. 10.1002/pssb.200675618
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- Article
Laudatio for Klaus H. Ploog.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2680, doi. 10.1002/pssb.200790011
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Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2707, doi. 10.1002/pssb.200675620
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- Article
Relaxation and recombination in InAs quantum dots.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2803, doi. 10.1002/pssb.200675602
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Electrostatic electron piston pump with in-plane gate transistors.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 3009, doi. 10.1002/pssb.200675613
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- Article
The growth of high quality GaMnAs layers and heterostructures by molecular beam epitaxy.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2944, doi. 10.1002/pssb.200675624
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- Article
Intersubband absorption at 1.5-3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2892, doi. 10.1002/pssb.200675606
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Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2926, doi. 10.1002/pssb.200675617
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Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2816, doi. 10.1002/pssb.200675628
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Preface: phys. stat. sol. (b) 244/8.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2679, doi. 10.1002/pssb.200790010
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Today's challenges in quantum dot materials research for tomorrow's quantum functional devices.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2782, doi. 10.1002/pssb.200675601
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Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2740, doi. 10.1002/pssb.200675612
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Characterization of planar photonic crystals using a quantum well infrared photodetector.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2916, doi. 10.1002/pssb.200675605
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Molecular beam epitaxy of IV-VI semiconductor hetero- and nano-structures.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2752, doi. 10.1002/pssb.200675616
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Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2730, doi. 10.1002/pssb.200675609
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MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2683, doi. 10.1002/pssb.200675623
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