Works matching IS 03701972 AND DT 2006 AND VI 243 AND IP 7

Results: 62

Investigating the electrical properties of Si donors in Al xGa1- xN alloys.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1609, doi. 10.1002/pssb.200565461

By:

James, G. R.;
Omnès, F.;
Leitch, A. W. R.

Publication type:

Article

Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1625, doi. 10.1002/pssb.200565432

By:

Bulashevich, K. A.;
Karpov, S. Yu.;
Suris, R. A.

Publication type:

Article

Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1490, doi. 10.1002/pssb.200565311

By:

Sánchez-García, M. A.;
Grandal, J.;
Calleja, E.;
Lazic, S.;
Calleja, J. M.;
Trampert, A.

Publication type:

Article

The dominant shallow 0.225 eV acceptor in GaN.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1604, doi. 10.1002/pssb.200565425

By:

Monemar, B.;
Paskov, P. P.;
Bergman, J. P.;
Paskova, T.;
Figge, S.;
Dennemarck, J.;
Hommel, D.

Publication type:

Article

Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1661, doi. 10.1002/pssb.200565407

By:

Sebald, K.;
Lohmeyer, H.;
Gutowski, J.;
Yamaguchi, T.;
Hommel, D.

Publication type:

Article

MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1411, doi. 10.1002/pssb.200565373

By:

Kuboya, S.;
Nakajima, F.;
Katayama, R.;
Onabe, K.

Publication type:

Article

Doping of GaN with Fe and Mg for spintronics applications.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1701, doi. 10.1002/pssb.200565230

By:

Bonanni, Alberta;
Simbrunner, Clemens;
Wegscheider, Matthias;
Przybylinska, Hanka;
Wolos, Agnieszka;
Sitter, Helmut;
Jantsch, Wolfgang

Publication type:

Article

X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1524, doi. 10.1002/pssb.200565344

By:

Tsuda, Michinobu;
Furukawa, Hiroko;
Honshio, Akira;
Iwaya, Motoaki;
Kamiyama, Satoshi;
Amano, Hiroshi;
Akasaki, Isamu

Publication type:

Article

New semiconductor alloy GaNAsBi with temperature-insensitive bandgap.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1421, doi. 10.1002/pssb.200565270

By:

Yoshimoto, Masahiro;
Huang, Wei;
Feng, Gan;
Oe, Kunishige

Publication type:

Article

Pressure and composition dependence of the electron effective mass in GaAs1- xN x.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1599, doi. 10.1002/pssb.200565315

By:

Gorczyca, I.;
Christensen, N. E.;
Svane, A.

Publication type:

Article

Growth and optical characterization of InAsN quantum dots.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1657, doi. 10.1002/pssb.200565395

By:

Tsurusawa, H.;
Nishikawa, A.;
Katayama, R.;
Onabe, K.

Publication type:

Article

Transient pump-probe measurements for polarized excitons in strained GaN epitaxial layers.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1564, doi. 10.1002/pssb.200565234

By:

Ishiguro, T.;
Toda, Y.;
Adachi, S.;
Arita, M.;
Arakawa, Y.

Publication type:

Article

Growth of AlN nanowires by metal organic chemical vapour deposition.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1476, doi. 10.1002/pssb.200565205

By:

Cimalla, V.;
Foerster, Ch.;
Cengher, D.;
Tonisch, K.;
Ambacher, O.

Publication type:

Article

Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1541, doi. 10.1002/pssb.200565256

By:

Wójtowicz, T.;
Gloux, F.;
Ruterana, P.;
Nouet, G.;
Bodiou, L.;
Braud, A.;
Lorenz, K.;
Alves, E.

Publication type:

Article

Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1588, doi. 10.1002/pssb.200565193

By:

Arvanitidis, J.;
Katsikini, M.;
Ves, S.;
Delimitis, A.;
Kehagias, Th.;
Komninou, Ph.;
Dimakis, E.;
Iliopoulos, E.;
Georgakilas, A.

Publication type:

Article

Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1426, doi. 10.1002/pssb.200565139

By:

Malinauskas, T.;
Jarašiūnas, K.;
Aleksiejunas, R.;
Gogova, D.;
Monemar, B.;
Beaumont, B.;
Gibart, P.

Publication type:

Article

Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1508, doi. 10.1002/pssb.200565442

By:

Barabash, R. I.;
Ice, G. E.;
Liu, W.;
Roder, C.;
Figge, S.;
Einfeldt, S.;
Hommel, D.;
Katona, T. M.;
Speck, J. S.;
DenBaars, S. P.;
Davis, R. F.

Publication type:

Article

X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1692, doi. 10.1002/pssb.200565413

By:

Sancho-Juan, O.;
Cantarero, A.;
Martínez-Criado, G.;
Olguín, D.;
Garro, N.;
Cros, A.;
Salomé, M.;
Susini, J.;
Dhar, S.;
Ploog, K.

Publication type:

Article

Resonant Raman scattering in InGaN alloys.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1494, doi. 10.1002/pssb.200565350

By:

Davydov, V. Yu.;
Klochikhin, A. A.;
Goncharuk, I. N.;
Smirnov, A. N.;
Sakharov, A. V.;
Skvortsov, A. P.;
Yagovkina, M. A.;
Lebedev, V. M.;
Lu, Hai;
Schaff, William J.

Publication type:

Article

Generalized Wannier functions: An efficient way to construct ab-initio tight-binding parameters for group-III nitrides.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1583, doi. 10.1002/pssb.200565475

By:

Wahn, M.;
Neugebauer, J.

Publication type:

Article

Optical properties of single non-polar GaN quantum dots.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1652, doi. 10.1002/pssb.200565406

By:

Rol, F.;
Gayral, B.;
Founta, S.;
Daudin, B.;
Eymery, J.;
Gérard, J.-M.;
Mariette, H.;
Dang, Le Si;
Peyrade, D.

Publication type:

Article

Transition energies and Stokes shift analysis for In-rich InGaN alloys.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1572, doi. 10.1002/pssb.200565303

By:

Schley, P.;
Goldhahn, R.;
Winzer, A. T.;
Gobsch, G.;
Cimalla, V.;
Ambacher, O.;
Rakel, M.;
Cobet, C.;
Esser, N.;
Lu, H.;
Schaff, W. J.

Publication type:

Article

A-plane (11 $ \bar 2 $.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1468, doi. 10.1002/pssb.200565383

By:

Kumagai, Y.;
Tsuyuguchi, A.;
Naoi, H.;
Araki, T.;
Na, H.;
Nanishi, Y.

Publication type:

Article

Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum-well structures embedded in an asymmetric microcavity.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1647, doi. 10.1002/pssb.200565325

By:

Lin, D. Y.;
Shiu, J. J.;
Lin, C. F.

Publication type:

Article

N-plasma assisted MBE grown GaN films on Si(111).

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1416, doi. 10.1002/pssb.200565439

By:

Gangopadhyay, Subhashis;
Schmidt, Thomas;
Falta, Jens

Publication type:

Article

RF-MBE growth and structural characterization of cubic InN films on GaAs.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1451, doi. 10.1002/pssb.200565376

By:

Nakamura, T.;
Iida, K.;
Katayama, R.;
Yamamoto, T.;
Onabe, K.

Publication type:

Article

Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non-(0001) GaN facets.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1619, doi. 10.1002/pssb.200565101

By:

Feneberg, M.;
Schirra, M.;
Neubert, B.;
Brückner, P.;
Scholz, F.;
Sauer, R.;
Thonke, K.

Publication type:

Article

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1696, doi. 10.1002/pssb.200565329

By:

Hwang, J. I.;
Ishida, Y.;
Kobayashi, M.;
Osafune, Y.;
Mizokawa, T.;
Fujimori, A.;
Takeda, Y.;
Terai, K.;
Fujimori, S-I.;
Saitoh, Y.;
Muramatsu, Y.;
Tanaka, A.;
Kondo, T.;
Munekata, H.;
Hashimoto, M.;
Tanaka, H.;
Hasegawa, S.;
Asahi, H.

Publication type:

Article

Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1634, doi. 10.1002/pssb.200565192

By:

Lazić, S.;
Calleja, J. M.;
Hey, R.;
Ploog, K.

Publication type:

Article

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1431, doi. 10.1002/pssb.200565208

By:

Kumagai, Y.;
Takemoto, K.;
Kikuchi, J.;
Hasegawa, T.;
Murakami, H.;
Koukitu, A.

Publication type:

Article

Temperature-dependent growth and characterization of N-polar InN films by molecular beam epitaxy.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1456, doi. 10.1002/pssb.200565145

By:

Wang, Xinqiang;
Che, Song-Bek;
Ishitani, Yoshihiro;
Yoshikawa, Akihiko

Publication type:

Article

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1630, doi. 10.1002/pssb.200565116

By:

Tchernycheva, M.;
Nevou, L.;
Doyennette, L.;
Julien, F. H.;
Guillot, F.;
Monroy, E.;
Remmele, T.;
Albrecht, M.

Publication type:

Article

Degenerate four-wave mixing spectroscopy of GaN films on various substrates.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1560, doi. 10.1002/pssb.200565167

By:

Ishiguro, T.;
Toda, Y.;
Adachi, S.;
Mukai, T.;
Hoshino, K.;
Arakawa, Y.

Publication type:

Article

Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1436, doi. 10.1002/pssb.200565109

By:

Tuomisto, F.;
Hautakangas, S.;
Makkonen, I.;
Ranki, V.;
Puska, M. J.;
Saarinen, K.;
Bockowski, M.;
Suski, T.;
Paskova, T.;
Monemar, B.;
Xu, X.;
Look, D. C.

Publication type:

Article

Relaxation in crack-free AlN/GaN superlattices.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1533, doi. 10.1002/pssb.200565470

By:

Kröger, R.;
Kruse, C.;
Roder, C.;
Hommel, D.;
Rosenauer, A.

Publication type:

Article

Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1529, doi. 10.1002/pssb.200565445

By:

Danilchenko, B. A.;
Zelensky, S. E.;
Drok, E.;
Vitusevich, S. A.;
Danylyuk, S. V.;
Klein, N.;
Lüth, H.;
Belyaev, A. E.;
Kochelap, V. A.

Publication type:

Article

N-polarity GaN on sapphire substrate grown by MOVPE.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1446, doi. 10.1002/pssb.200565456

By:

Matsuoka, Takashi;
Kobayashi, Yasuyuki;
Takahata, Hiroko;
Mitate, Toshitugu;
Mizuno, Seiichiro;
Sasaki, Atsushi;
Yoshimoto, Mamoru;
Ohnishi, Tuyoshi;
Sumiya, Masatomo

Publication type:

Article

In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1519, doi. 10.1002/pssb.200565247

By:

Coraux, J.;
Renevier, H.;
Proietti, M. G.;
Favre-Nicolin, V.;
Daudin, B.;
Renaud, G.

Publication type:

Article

Four-wave mixing measurements of biexcitons in uniaxially-strained GaN films.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1568, doi. 10.1002/pssb.200565298

By:

Adachi, Satoru;
Toda, Yasunori;
Ishiguro, Tetsuro

Publication type:

Article

GaN/AlGaN superlattices for optoelectronics in the mid-infrared.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1669, doi. 10.1002/pssb.200565328

By:

Guillot, F.;
Monroy, E.;
Gayral, B.;
Bellet-Amalric, E.;
Jalabert, D.;
Gérard, J.-M.;
Dang, Le Si;
Tchernycheva, M.;
Julien, F. H.;
Monnoye, S.;
Mank, H.

Publication type:

Article

Growth of high-In-content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma-assisted molecular-beam epitaxy.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1481, doi. 10.1002/pssb.200565254

By:

Kouno, Tetsuya;
Kikuchi, Akihiko;
Kishino, Katsumi

Publication type:

Article

Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1545, doi. 10.1002/pssb.200565294

By:

Drakopoulos, M.;
Laügt, M.;
Riemann, T.;
Beaumont, B.;
Gibart, P.

Publication type:

Article

Electric fields in AlGaN/GaN quantum well structures.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1551, doi. 10.1002/pssb.200565382

By:

McAleese, C.;
Costa, P. M. F. J.;
Graham, D. M.;
Xiu, H.;
Barnard, J. S.;
Kappers, M. J.;
Dawson, P.;
Godfrey, M. J.;
Humphreys, C. J.

Publication type:

Article

Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1461, doi. 10.1002/pssb.200565449

By:

Wang, K. R.;
Tu, L. W.;
Lin, S. J.;
Chen, Y. L.;
Jiang, Z. W.;
Chen, M.;
Hsiao, C. L.;
Cheng, K. H.;
Yeh, J. W.;
Chen, S. K.

Publication type:

Article

The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1665, doi. 10.1002/pssb.200565115

By:

Narita, Tetsuo;
Honda, Yoshio;
Yamaguchi, Masahito;
Sawaki, Nobuhiko

Publication type:

Article

Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1639, doi. 10.1002/pssb.200565269

By:

Sellers, I. R.;
Semond, F.;
Leroux, M.;
Massies, J.;
Henneghien, A-L.;
Disseix, P.;
Leymarie, J.;
Vasson, A.

Publication type:

Article

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1594, doi. 10.1002/pssb.200565400

By:

Darakchieva, V.;
Paskova, T.;
Paskov, P. P.;
Arwin, H.;
Schubert, M.;
Monemar, B.;
Figge, S.;
Hommel, D.;
Haskell, B. A.;
Fini, P. T.;
Nakamura, S.

Publication type:

Article

Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1403, doi. 10.1002/pssb.200690013

By:

Drakopoulos, M.;
Laügt, M.;
Riemann, T.;
Beaumont, B.;
Gibart, P.

Publication type:

Article

Site selectivity of Fe3+Ga and the formation of Fe3+Ga-Gai pairs in GaN.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1687, doi. 10.1002/pssb.200565466

By:

Gehlhoff, W.;
Azamat, D.;
Hoffmann, A.

Publication type:

Article

Low density GaN quantum dots on AlGaN.

Published in:

Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1486, doi. 10.1002/pssb.200565231

By:

Pakuła, K.;
Bożek, R.;
Surowiecka, K.;
Stępniewski, R.;
Wysmolek, A.;
Baranowski, J. M.

Publication type:

Article