Works matching IS 03701972 AND DT 2003 AND VI 235 AND IP 1

Results: 36

Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 107, doi. 10.1002/pssb.200301543

By:

Coutinho, J.;
Torres, V.J.B.;
Jones, R.;
Resende, A.;
Briddon, P.R.

Publication type:

Article

Optical properties of Si-, Ge- and Sn-doped GaN.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 26, doi. 10.1002/pssb.200301525

By:

Shikanaia, A.;
Fukahori, H.;
Kawakami, Y.;
Hazu, K.;
Sota, T.;
Mitani, T.;
Mukai, T.;
Fujita, Sg.

Publication type:

Article

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 135, doi. 10.1002/pssb.200301536

By:

Kagan, M. S.;
Altukhov, I. V.;
Chirkova, E. G.;
Sinis, V. P.;
Troeger, R. T.;
Ray, S. K.;
Kolodzey, J.

Publication type:

Article

Far-infrared optical spectrum of donor impurities in quantum dots in a magnetic field.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 146, doi. 10.1002/pssb.200301529

By:

Pacheco, M.;
León, A.;
Barticevic, Z.

Publication type:

Article

Electronic properties of Si/SiGe ultrathin quantum well superlattices.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 189, doi. 10.1002/pssb.200301356

By:

Rached, D.;
Benkhettou, N.;
Sekkal, N.

Publication type:

Article

Conductivity via impurities in low-doped uncompensated silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 96, doi. 10.1002/pssb.200301531

By:

Melnikov, A. P.

Publication type:

Article

Hydrogen passivation of the SiGa donor in GaP.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 102, doi. 10.1002/pssb.200301542

By:

Ulrici, W.;
Clerjaud, B.;
Côte, D.

Publication type:

Article

Residual donors in wurtzite GaN homoepitaxial layers and heterostructures.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 20, doi. 10.1002/pssb.200301524

By:

Neu, G.;
Teisseire-Doninelli, M.;
Morhain, C.;
Semond, F.;
Grandjean, N.;
Beaumont, B.;
Frayssinet, E.;
Knap, W.;
Witowski, A. M.;
Sadowski, M. L.;
Leszczynski, M.;
Prystawko, P.

Publication type:

Article

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 79, doi. 10.1002/pssb.200301535

By:

Andreev, B. A.;
Emtsev, V. V.;
Kryzhkov, D. I.;
Kuritsyn, D. I.;
Shmagin, V. B.

Publication type:

Article

Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 40, doi. 10.1002/pssb.200306171

By:

Korona, K. P.;
Doradziński, R.;
Palczewska, M.;
Pietras, M.;
Kamińska, M.;
Kuhl, J.

Publication type:

Article

Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 170, doi. 10.1002/pssb.200301414

By:

Lengsfeld, P.;
Brehme, S.;
Brendel, K.;
Genzel, Ch.;
Nickel, N. H.

Publication type:

Article

Resonant states in doped quantum wells.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 85, doi. 10.1002/pssb.200301528

By:

Blom, A.;
Odnoblyudov, M.A.;
Yassievich, I.N.;
Chao, K.A.

Publication type:

Article

Hydrogen as a shallow center in semiconductors and oxides.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 89, doi. 10.1002/pssb.200301539

By:

Van de Walle, Chris G.

Publication type:

Article

Photoluminescence studies of isotopically enriched silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 3, doi. 10.1002/pssb.200300000

By:

Karaiskaj, D.;
Thewalt, M.L.W.;
Ruf, T.;
Cardona, M.

Publication type:

Article

Resonant interaction of LO phonons with excited donor states in GaN.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 36, doi. 10.1002/pssb.200301530

By:

Wysmolek, A.;
Potemski, M.;
Stepniewski, R.;
Baranowski, J. M.;
Look, D. C.;
Lee, S. K.;
Han, J. Y.

Publication type:

Article

Selective magneto-luminescence spectroscopy of donoacceptor pairs in n-GaAs.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 48, doi. 10.1002/pssb.200301541

By:

Wysmolek, A.

Publication type:

Article

The Self-Compression of Injected Electron-Hole Plasma in Silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 195, doi. 10.1002/pssb.200301512

By:

Altukhov, P.D.;
Kuzminov, E.G.

Publication type:

Article

Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 44, doi. 10.1002/pssb.200301523

By:

Van Khoi, Le;
Kossut, J.;
Gałazka, R.R.

Publication type:

Article

Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 157, doi. 10.1002/pssb.200301420

By:

Jiang, Y.;
Jalil, M. B. A.

Publication type:

Article

Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 75, doi. 10.1002/pssb.200301534

By:

Emtsev, V. V.;
Ammerlaan, C. A. J.;
Oganesyan, G. A.;
Andreev, B. A.;
Kuritsyn, D. I.;
Misiuk, A.;
Surma, B.;
Londos, C. A.

Publication type:

Article

Donor centers in zinc germanium diphosphide produced by electron irradiation.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 151, doi. 10.1002/pssb.200301545

By:

Gehlhoff, W.;
Azamat, D.;
Hoffmann, A.

Publication type:

Article

Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 54, doi. 10.1002/pssb.200301527

By:

Zheng, W.-M.;
Halsall, M. P.;
Harrison, P.;
Wells, J.-P. R.;
Bradley, I. V.;
Steer, M. J.

Publication type:

Article

Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 115, doi. 10.1002/pssb.200301538

By:

Nakanishi, A.;
Fukata, N.;
Suezawa, M.

Publication type:

Article

Rostislav Kaischev (1908-2002).

Published in:: Physica Status Solidi (B), 2003, v. 235, n. 1, p. 9, doi. 10.1002/pssb.200301549
Publication type:: Article

Effect of incident probe on HAADF STEM images.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 179, doi. 10.1002/pssb.200301354

By:

Watanabe, K.;
Nakanishi, N.;
Yamazaki, T.;
Kawasaki, M.;
Hashimoto, I.;
Shiojiri, M.

Publication type:

Article

Photoluminescence studies of isotopically enriched silicon.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 63, doi. 10.1002/pssb.200301540

By:

Karaiskaj, D.;
Thewalt, M.L. W.;
Ruf, T.;
Cardona, M.

Publication type:

Article

'Some like it shallower' - p-type doping in SiC.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 139, doi. 10.1002/pssb.200301522

By:

Deák, Peter;
Aradi, Bálint;
Gali, Adam;
Gerstmann, Uwe

Publication type:

Article

Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 58, doi. 10.1002/pssb.200301533

By:

Alt, H. Ch.;
Gomeniuk, Y.;
Kretzer, U.

Publication type:

Article

Nitrogen-hydrogen complexes in GaAs and GaAs1- xN x alloys.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 121, doi. 10.1002/pssb.200301544

By:

Kim, Yong-Sung;
Chang, K.J.

Publication type:

Article

Phase transitions and amorphization of CaWO4 at high pressure.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 162, doi. 10.1002/pssb.200301412

By:

Errandonea, Daniel;
Somayazulu, Maddury;
Häusermann, Daniel

Publication type:

Article

Dynamics of trapping on donors and relaxation of the B-exciton in GaN.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 31, doi. 10.1002/pssb.200301526

By:

Korona, K. P.;
Wysmołek, A.;
Stępniewski, R.;
Potemski, M.;
Kuhl, J.;
Baranowski, J. M.;
Martinez, G.;
Grzegory, I.;
Porowski, S.

Publication type:

Article

N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 111, doi. 10.1002/pssb.200301537

By:

Ohmura, Y.;
Takahashi, M.;
Suzuki, M.;
Emura, A.;
Sakamoto, N.;
Meguro, T.;
Yamamoto, Y.

Publication type:

Article

Scientific misconduct: Past, present, and future ...

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 11, doi. 10.1002/pssb.200301548

By:

Stutzmann, Martin;
Hildebrandt, Stefan

Publication type:

Article

Light propagation- and many-particle-induced non-Lorentzian lineshapes in semiconductor nanooptics.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 200, doi. 10.1002/pssb.200301550

By:

Förstner, J.;
Ahn, K. J.;
Danckwerts, J.;
Schaarschmidt, M.;
Waldmüller, I.;
Weber, C.;
Knorr, A.

Publication type:

Article

DX behaviour of Si donors in AlGaN alloys.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 13, doi. 10.1002/pssb.200301521

By:

Brandt, Martin S.;
Zeisel, Roland;
Gönnenwein, Sebastian T. B.;
Bayerl, Martin W.;
Stutzmann, Martin

Publication type:

Article

Optically pumped terahertz semiconductor bulk lasers.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 126, doi. 10.1002/pssb.200301532

By:

Pavlov, S. G.;
Hübers, H.-W.;
Orlova, E. E.;
Zhukavin, R. Kh.;
Riemann, H.;
Nakata, H.;
Shastin, V. N.

Publication type:

Article

Works matching IS 03701972 AND DT 2003 AND VI 235 AND IP 1

Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon.

Optical properties of Si-, Ge- and Sn-doped GaN.

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.

Far-infrared optical spectrum of donor impurities in quantum dots in a magnetic field.

Electronic properties of Si/SiGe ultrathin quantum well superlattices.

Conductivity via impurities in low-doped uncompensated silicon.

Hydrogen passivation of the Si<sub>Ga</sub> donor in GaP.

Residual donors in wurtzite GaN homoepitaxial layers and heterostructures.

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon.

Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN.

Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon.

Resonant states in doped quantum wells.

Hydrogen as a shallow center in semiconductors and oxides.

Photoluminescence studies of isotopically enriched silicon.

Resonant interaction of LO phonons with excited donor states in GaN.

Selective magneto-luminescence spectroscopy of donoacceptor pairs in n-GaAs.

The Self-Compression of Injected Electron-Hole Plasma in Silicon.

Optical identification of impurity levels in strongly phosphorus-doped wide-gap II-VI bulk semimagnetic semiconductors.

Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure.

Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures.

Donor centers in zinc germanium diphosphide produced by electron irradiation.

Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells.

Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen.

Rostislav Kaischev (1908-2002).

Effect of incident probe on HAADF STEM images.

Photoluminescence studies of isotopically enriched silicon.

'Some like it shallower' - p-type doping in SiC.

Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2.

Nitrogen-hydrogen complexes in GaAs and GaAs<sub>1- x</sub>N<sub> x</sub> alloys.

Phase transitions and amorphization of CaWO<sub>4</sub> at high pressure.

Dynamics of trapping on donors and relaxation of the B-exciton in GaN.

N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering.

Scientific misconduct: Past, present, and future ...

Light propagation- and many-particle-induced non-Lorentzian lineshapes in semiconductor nanooptics.

DX behaviour of Si donors in AlGaN alloys.

Optically pumped terahertz semiconductor bulk lasers.