Works matching IS 03701972 AND DT 2002 AND VI 234 AND IP 3

Results: 62

Unconventional Magnetic Behaviour of TbB12 at Low Temperature.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. R13, doi. 10.1002/1521-3951(200212)234:3<R13::AID-PSSB999913>3.0.CO;2-O

By:

Murasik, A.;
Czopnik, A.;
Keller, L.;
Zolliker, M.;
Shitsevalova, N.;
Paderno, Y.

Publication type:

Article

Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 911, doi. 10.1002/1521-3951(200212)234:3<911::AID-PSSB911>3.0.CO;2-O

By:

Haboeck, U.;
Kaschner, A.;
Hoffmann, A.;
Thomsen, C.;
Riemann, T.;
Krtschil, A.;
Christen, J.;
Krost, A.;
Seyboth, M.;
Habel, F.

Publication type:

Article

Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 830, doi. 10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O

By:

Van Daele, B.;
Van Tendeloo, G.;
Germain, M.;
Leys, M.;
Bougrioua, Z.;
Moerman, I.

Publication type:

Article

Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 801, doi. 10.1002/1521-3951(200212)234:3<801::AID-PSSB801>3.0.CO;2-W

By:

Miyajima, T.;
Kudo, Y.;
Liu, K.-L.;
Uruga, T.;
Honma, T.;
Saito, Y.;
Hori, M.;
Nanishi, Y.;
Kobayashi, T.;
Hirata, S.

Publication type:

Article

Optical Properties of RF-MBE Grown AlGaAsN.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 915, doi. 10.1002/1521-3951(200212)234:3<915::AID-PSSB915>3.0.CO;2-8

By:

Yamamoto, K.;
Uchida, M.;
Yamamoto, A.;
Masuda, A.;
Hashimoto, A.

Publication type:

Article

Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 892, doi. 10.1002/1521-3951(200212)234:3<892::AID-PSSB892>3.0.CO;2-T

By:

Paskov, P.P.;
Darakchieva, V.;
Paskova, T.;
Holtz, P.O.;
Monemar, B.

Publication type:

Article

Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 764, doi. 10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0

By:

Teisseyre, H.;
Suski, T.;
Łepkowski, S.P.;
Anceau, S.;
Perlin, P.;
Lefebvre, P.;
Kończewicz, L.;
Hirayama, H.;
Aoyagi, Y.

Publication type:

Article

Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 805, doi. 10.1002/1521-3951(200212)234:3<805::AID-PSSB805>3.0.CO;2-G

By:

Link, A.;
Graf, T.;
Ambacher, O.;
Jimenez, A.;
Calleja, E.;
Smorchkova, Y.;
Speck, J.;
Mishra, U.;
Stutzmann, M.

Publication type:

Article

Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1-xN with High Al Content.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 845, doi. 10.1002/1521-3951(200212)234:3<845::AID-PSSB845>3.0.CO;2-0

By:

Taniyasu, Y.;
Kasu, M.;
Kobayashi, N.

Publication type:

Article

Quantitative Analysis of Absorption and Field-Induced Absorption Changes in InGaN/GaN Quantum Wells.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 742, doi. 10.1002/1521-3951(200212)234:3<742::AID-PSSB742>3.0.CO;2-G

By:

Kiesel, P.;
Renner, F.;
Kneissl, M.;
de Walle, C.G.Van;
Döhler, G. H.;
Johnson, N. M.

Publication type:

Article

Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 782, doi. 10.1002/1521-3951(200212)234:3<782::AID-PSSB782>3.0.CO;2-0

By:

Sanorpim, S.;
Nakajima, F.;
Imura, S.;
Katayama, R.;
Wu, J.;
Onabe, K.;
Shiraki, Y.

Publication type:

Article

Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 713, doi. 10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

By:

Goldhahn, R.;
Buchheim, C.;
Shokhovets, S.;
Gobsch, G.;
Ambacher, O.;
Link, A.;
Hermann, M.;
Stutzmann, M.;
Smorchkova, Y.;
Mishra, U.K.;
Speck, J.S.

Publication type:

Article

Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 919, doi. 10.1002/1521-3951(200212)234:3<919::AID-PSSB919>3.0.CO;2-T

By:

Shubina, T.V.;
Jmerik, V.N.;
Tkachman, M.G.;
Vekshin, V.A.;
Ratnikov, V.V.;
Toropov, A.A.;
Sitnikova, A.A.;
Ivanov, S.V.;
Bergman, J.P.;
Karlsson, F.;
Holtz, P.;
Monemar, B.

Publication type:

Article

Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1-xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001).

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 746, doi. 10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0

By:

Chichibu, SF.;
Onuma, T.;
Kitamura, T.;
Sota, T.;
DenBaars, S.P.;
Nakamura, S.;
Okumura, H.

Publication type:

Article

AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 717, doi. 10.1002/1521-3951(200212)234:3<717::AID-PSSB717>3.0.CO;2-8

By:

Ristić, J.;
Sánchez-García, M.A.;
Ulloa, J.M.;
Calleja, E.;
Sanchez-Páramo, J.;
Calleja, J.M.;
Jahn, U.;
Trampert, A.;
Ploog, K.H.

Publication type:

Article

Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 961, doi. 10.1002/1521-3951(200212)234:3<961::AID-PSSB961>3.0.CO;2-4

By:

Waki, I.;
Kumtornkittikul, C.;
Sato, K.;
Shimogaki, Y.;
Nakano, Y.

Publication type:

Article

Temperature Dependence of the Minority-Carrier Mobility-Lifetime Product for Probing Band-Tail States in Microcrystalline Silicon.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. R16, doi. 10.1002/1521-3951(200212)234:3<R16::AID-PSSB999916>3.0.CO;2-6

By:

Brüggemann, R.;
Kunz, O.

Publication type:

Article

Microstructural Investigation and Magnetic Properties of p-type GaN Implanted with Mn+ Ions.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 943, doi. 10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4

By:

Baik, J.M.;
Kim, J.K.;
Jang, H.W.;
Shon, Y.;
Kang, T.W.;
Lee, J.-L.

Publication type:

Article

Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPE.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 840, doi. 10.1002/1521-3951(200212)234:3<840::AID-PSSB840>3.0.CO;2-K

By:

Sanorpim, S.;
Takuma, E.;
Katayama, R.;
Onabe, K.;
Ichinose, H.;
Shiraki, Y.

Publication type:

Article

Electronic and Phonon Deformation Potentials of GaN and AlN: Ab initio Calculations versus Experiment.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 965, doi. 10.1002/1521-3951(200212)234:3<965::AID-PSSB965>3.0.CO;2-P

By:

Wagner, J.-M.;
Bechstedt, F.

Publication type:

Article

GaN/AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN Template.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 822, doi. 10.1002/1521-3951(200212)234:3<822::AID-PSSB822>3.0.CO;2-K

By:

Tang, H.;
Webb, J.B.;
Rolfe, S.;
Bardwell, J.A.;
Tomka, D.;
Coleridge, P.;
Ko, C.H.;
Su, Y.K.;
Chang, S.J.

Publication type:

Article

Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 947, doi. 10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P

By:

Potin, V.;
Rosenauer, A.;
Gerthsen, D.;
Kuhn, B.;
Scholz, F.

Publication type:

Article

Exciton Confinement in GaN/AlGaN Quantum Wells Enhanced by Non-Abrupt Interfaces.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 730, doi. 10.1002/1521-3951(200212)234:3<730::AID-PSSB730>3.0.CO;2-S

By:

Caetano, E.W.S.;
Freire, V.N.;
Farias, G.A.

Publication type:

Article

Growth of AlxGa1-xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 855, doi. 10.1002/1521-3951(200212)234:3<855::AID-PSSB855>3.0.CO;2-X

By:

Konishi, M.;
Tanabe, T.;
Kubo, S.;
Kurai, S.;
Taguchi, T.;
Kainosho, K.;
Yokohata, A.

Publication type:

Article

In-Redistribution in a GaInN Quantum Well upon Thermal Annealing.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 738, doi. 10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X

By:

Hahn, E.;
Rosenauer, A.;
Gerthsen, D.;
Off, J.;
Perez-Solorzano, V.;
Jetter, M.;
Scholz, F.

Publication type:

Article

Photoconductivity and Electroreflectance Study of Cubic GaN/GaAs(001) Heterostructures by Optical-Biasing Technique.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 877, doi. 10.1002/1521-3951(200212)234:3<877::AID-PSSB877>3.0.CO;2-H

By:

Katayama, R.;
Kuroda, M.;
Onabe, K.;
Shiraki, Y.

Publication type:

Article

Modulation of Surface Barrier in AlGaN/GaN Heterostructures.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 734, doi. 10.1002/1521-3951(200212)234:3<734::AID-PSSB734>3.0.CO;2-C

By:

Koley, G.;
Cha, Ho-Young;
Tilak, V.;
Eastman, L.F.;
Spencer, M.G.

Publication type:

Article

Electrical Properties of SiO2/n-GaN Metal-Insulator-Semiconductor Structures.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 859, doi. 10.1002/1521-3951(200212)234:3<859::AID-PSSB859>3.0.CO;2-H

By:

Nakano, Y.;
Jimbo, T.

Publication type:

Article

Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 796, doi. 10.1002/1521-3951(200212)234:3<796::AID-PSSB796>3.0.CO;2-H

By:

Saito, Y.;
Harima, H.;
Kurimoto, E.;
Yamaguchi, T.;
Teraguchi, N.;
Suzuki, A.;
Araki, T.;
Nanishi, Y.

Publication type:

Article

Fast and Ultrafast Processes in AlGaN/GaN Channels.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 826, doi. 10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4

By:

Matulionis, A.;
Liberis, J.;
Ardaravičius, L.;
Ramonas, M.;
Zubkutė, T.;
Matulionienė, I.;
Eastman, L.F.;
Shealy, J.R.;
Smart, J.;
Pavlidis, D.;
Hubbard, S.

Publication type:

Article

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 778, doi. 10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H

By:

Taliercio, T.;
Gil, B.;
Lefebvre, P.;
Pinault, M.-A.;
Tournié, E.

Publication type:

Article

Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. R7, doi. 10.1002/1521-3951(200212)234:3<R7::AID-PSSB99997>3.0.CO;2-D

By:

Zeuner, A.;
Alves, H.;
Hofmann, D.M.;
Meyer, B.K.;
Hoffmann, A.;
Haboeck, U.;
Strassburg, M.;
Dworzak, M.

Publication type:

Article

Controlling the Morphology of GaN Layers Grown on AlN in Ga Self-Surfactant Conditions: from Quantum Wells to Quantum Dots.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 931, doi. 10.1002/1521-3951(200212)234:3<931::AID-PSSB931>3.0.CO;2-G

By:

Adelmann, C.;
Daudin, B.;
Monroy, E.;
Sarigiannidou, E.;
Rouvière, J.L.;
Hori, Y.;
Brault, J.;
Gogneau, N.;
Fanget, S.;
Bru-Chevallier, C.

Publication type:

Article

Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 810, doi. 10.1002/1521-3951(200212)234:3<810::AID-PSSB810>3.0.CO;2-W

By:

Wraback, M.;
Shen, H.;
Rudin, S.;
Bellotti, E.

Publication type:

Article

Electron Holography Studies of the Charge on Dislocations in GaN.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 924, doi. 10.1002/1521-3951(200212)234:3<924::AID-PSSB924>3.0.CO;2-8

By:

Cherns, D.;
Jiao, C.G.;
Mokhtari, H.;
Cai, J.;
Ponce, F.A.

Publication type:

Article

Mg Incorporation in AlGaN Layers Grown on Grooved Sapphire Substrates.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 850, doi. 10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

By:

Cherns, D.;
Baines, M.Q.;
Wang, Y.Q.;
Liu, R.;
Ponce, F.A.;
Amano, H.;
Akasaki, I.

Publication type:

Article

Origin of Inversion Domains in GaN/AlN/Si(111) Heterostructures Grown by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 935, doi. 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0

By:

Sanchez, A.M.;
Ruterana, P.;
Molina, S.I.;
Pacheco, F.J.;
Garcia, R.

Publication type:

Article

Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/Al xGa1- xN Superlattices.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 975, doi. 10.1002/1521-3951(200212)234:3<975::AID-PSSB975>3.0.CO;2-L

By:

Davydov, V.Yu.;
Smirnov, A.N.;
Goncharuk, I.N.;
Kyutt, R.N.;
Scheglov, M.P.;
Baidakova, M.V.;
Lundin, W.V.;
Zavarin, E.E.;
Smirnov, M.B.;
Karpov, S.V.;
Harima, H.

Publication type:

Article

k · p Calculations of Electronic and Optical Properties of p-doped (001) AlGaN/GaN Thin Superlattices.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 906, doi. 10.1002/1521-3951(200212)234:3<906::AID-PSSB906>3.0.CO;2-8

By:

Rodrigues, S.C.P.;
Scolfaro, L.M.R.;
Sipahi, G.M.;
Noriega, O.C.;
Leite, J.R.

Publication type:

Article

Hall Effect Data Analysis of GaN n+n Structures.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 872, doi. 10.1002/1521-3951(200212)234:3<872::AID-PSSB872>3.0.CO;2-0

By:

Arnaudov, B.;
Paskova, T.;
Evtimova, S.;
Heuken, M.;
Monemar, B.

Publication type:

Article

Papers presented at the International Workshop on Nitride Semiconductors (IWN 2002).

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 711, doi. 10.1002/1521-3951(200212)234:3<711::AID-PSSB711>3.0.CO;2-W

By:

Hoffmann, Axel;
Rizzi, Angela

Publication type:

Article

Lateral Arrangement of Self-Assembled GaN Islands on Periodically Stepped AlN Surfaces.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 939, doi. 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L

By:

Brault, J.;
Tanaka, S.;
Sarigiannidou, E.;
Nakagawa, H.;
Rouvière, J.-L.;
Feuillet, G.;
Daudin, B.

Publication type:

Article

Spontaneous Superlattice Formation in AlGaN Layers Grown by MOCVD on Si(111)-Substrates.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 722, doi. 10.1002/1521-3951(200212)234:3<722::AID-PSSB722>3.0.CO;2-O

By:

Strittmatter, A.;
Reissmann, L.;
Bimberg, D.;
Veit, P.;
Krost, A.

Publication type:

Article

Surface Potential at as-Grown GaN(0001) MBE Layers.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 773, doi. 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO;2-0

By:

Kočan, M.;
Rizzi, A.;
Lüth, H.;
Keller, S.;
Mishra, U.K.

Publication type:

Article

Optical Characterization of AlxGa1-xN Alloys (x < 0.7) Grown on Sapphire or Silicon.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 887, doi. 10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D

By:

Leroux, M.;
Dalmasso, S.;
Natali, F.;
Helin, S.;
Touzi, C.;
Laügt, S.;
Passerel, M.;
Omnes, F.;
Semond, F.;
Massies, J.;
Gibart, P.

Publication type:

Article

Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 755, doi. 10.1002/1521-3951(200212)234:3<755::AID-PSSB755>3.0.CO;2-0

By:

Paskov, P.P.;
Holtz, P.O.;
Monemar, B.;
Kamiyama, S.;
Iwaya, M.;
Amano, H.;
Akasaki, I.

Publication type:

Article

Assessment of AlGaN Growth by Plasma Assisted MBE Using In as a Surfactant.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 726, doi. 10.1002/1521-3951(200212)234:3<726::AID-PSSB726>3.0.CO;2-8

By:

Monroy, E.;
Daudin, B.;
Gogneau, N.;
Bellet-Amalric, E.;
Jalabert, D.;
Brault, J.

Publication type:

Article

Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 759, doi. 10.1002/1521-3951(200212)234:3<759::AID-PSSB759>3.0.CO;2-L

By:

Suski, T.;
Teisseyre, H.;
Łepkowski, S.P.;
Perlin, P.;
Kitamura, T.;
Ishida, Y.;
Okumura, H.;
Chichibu, SF.

Publication type:

Article

Interfacial Elasticity Corrections to Size-Dependent Strain-State of Embedded Quantum Dots.

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. R10, doi. 10.1002/1521-3951(200212)234:3<R10::AID-PSSB999910>3.0.CO;2-5

By:

Sharma, P.;
Ganti, S.

Publication type:

Article

Optical Phonons in Hexagonal Al xIn yGa1- x- yN ( y ≈ 0.12).

Published in:

Physica Status Solidi (B), 2002, v. 234, n. 3, p. 970, doi. 10.1002/1521-3951(200212)234:3<970::AID-PSSB970>3.0.CO;2-4

By:

Kasic, A.;
Schubert, M.;
Off, J.;
Scholz, F.;
Einfeldt, S.;
Hommel, D.

Publication type:

Article