Works matching IS 03701972 AND DT 2001 AND VI 228 AND IP 1

Results: 72

Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 153, doi. 10.1002/1521-3951(200111)228:1<153::AID-PSSB153>3.0.CO;2-Z

By:

Kaneta, A.;
Marutsuki, G.;
Okamoto, K.;
Kawakami, Y.;
Nakagawa, Y.;
Shinomiya, G.;
Mukai, T.;
Fujita, Sg.

Publication type:

Article

A Comparison of Rutherford Backscattering Spectroscopy and X-Ray Diffraction to Determine the Composition of Thick InGaN Epilayers.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 41, doi. 10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N

By:

Srinivasan, S.;
Liu, R.;
Bertram, F.;
Ponce, F.A.;
Tanaka, S.;
Omiya, H.;
Nakagawa, Y.

Publication type:

Article

Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method with Subpicosecond Pulsed Laser.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 81, doi. 10.1002/1521-3951(200111)228:1<81::AID-PSSB81>3.0.CO;2-F

By:

Okamoto, K.;
Kaneta, A.;
Inoue, K.;
Kawakami, Y.;
Terazima, M.;
Shinomiya, G.;
Mukai, T.;
Fujita, Sg.

Publication type:

Article

Growth Temperature Dependences of MOVPE InN on Sapphire Substrates.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 5, doi. 10.1002/1521-3951(200111)228:1<5::AID-PSSB5>3.0.CO;2-E

By:

Yamamoto, A.;
Murakami, Y.;
Koide, K.;
Adachi, M.;
Hashimoto, A.

Publication type:

Article

Optical Characterization of InGaN/GaN MQW Structures without In Phase Separation.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 157, doi. 10.1002/1521-3951(200111)228:1<157::AID-PSSB157>3.0.CO;2-J

By:

Monemar, B.;
Paskov, P.P.;
Pozina, G.;
Paskova, T.;
Bergman, J.P.;
Iwaya, M.;
Nitta, S.;
Amano, H.;
Akasaki, I.

Publication type:

Article

Cathodoluminescence Investigations of Interfaces in InGaN/GaN/Sapphire Structures.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 179, doi. 10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3

By:

Godlewski, M.;
Goldys, E.M.;
Butcher, K.S.A.;
Phillips, M.R.;
Pakula, K.;
Baranowski, J.M.

Publication type:

Article

Local Structure Analysis of Ga1-xInxN Alloy Using Extended X-Ray Absorption Fine Structure Measurements.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 45, doi. 10.1002/1521-3951(200111)228:1<45::AID-PSSB45>3.0.CO;2-#

By:

Miyajima, T.;
Kudo, Y.;
Liu, K.-Y.;
Uruga, T.;
Asatsuma, T.;
Hino, T.;
Kobayashi, T.

Publication type:

Article

Temperature Dependence and Reflection of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 85, doi. 10.1002/1521-3951(200111)228:1<85::AID-PSSB85>3.0.CO;2-S

By:

Özgür, Ü.;
Lee, C.-W.;
Everitt, H.O.

Publication type:

Article

Anisotropic Superconductivity of InN Grown by Molecular Beam Epitaxy on Sapphire (0001).

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 9, doi. 10.1002/1521-3951(200111)228:1<9::AID-PSSB9>3.0.CO;2-Z

By:

Inushima, T.;
Vecksin, V.V.;
Ivanov, S.V.;
Davydov, V.Y.;
Sakon, T.;
Motokawa, M.

Publication type:

Article

A Novel Two-Step Method for Improvement of MOVPE Grown InN Film on GaP(111)B Substrate.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 27, doi. 10.1002/1521-3951(200111)228:1<27::AID-PSSB27>3.0.CO;2-S

By:

Bhuiyan, A.G.;
Yamamoto, A.;
Hashimoto, A.

Publication type:

Article

Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 49, doi. 10.1002/1521-3951(200111)228:1<49::AID-PSSB49>3.0.CO;2-C

By:

Waltereit, P.;
Brandt, O.;
Ploog, K.H.;
Tagliente, M.A.;
Tapfer, L.

Publication type:

Article

Passivation and Doping due to Hydrogen in III-Nitrides.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 303, doi. 10.1002/1521-3951(200111)228:1<303::AID-PSSB303>3.0.CO;2-A

By:

Limpijumnong, S.;
Van de Walle, C.G.

Publication type:

Article

Implantation Induced Defect States in Gallium Nitride and Their Annealing Behaviour.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 325, doi. 10.1002/1521-3951(200111)228:1<325::AID-PSSB325>3.0.CO;2-V

By:

Krtschil, A.;
Kielburg, A.;
Witte, H.;
Krost, A.;
Christen, J.;
Wenzel, A.;
Rauschenbach, B.

Publication type:

Article

Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 273, doi. 10.1002/1521-3951(200111)228:1<273::AID-PSSB273>3.0.CO;2-N

By:

Yaguchi, H.;
Kikuchi, S.;
Hijikata, Y.;
Yoshida, S.;
Aoki, D.;
Onabe, K.

Publication type:

Article

Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 141, doi. 10.1002/1521-3951(200111)228:1<141::AID-PSSB141>3.0.CO;2-A

By:

Yunovich, A.E.;
Kudryashov, V.E.

Publication type:

Article

The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 219, doi. 10.1002/1521-3951(200111)228:1<219::AID-PSSB219>3.0.CO;2-N

By:

Foxon, C.T.;
Novikov, S.V.;
Campion, R.P.;
Liao, Y.;
Winser, A.J.;
Harrison, I.

Publication type:

Article

Phonon Modes of InxGa1-xAs1-yNy Measured by Far Infrared Spectroscopic Ellipsometry.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 259, doi. 10.1002/1521-3951(200111)228:1<259::AID-PSSB259>3.0.CO;2-7

By:

Leibiger, G.;
Gottschalch, V.;
Schubert, M.

Publication type:

Article

InGaN/GaN Quantum Well Microcavities Formed by Laser Lift-Off and Plasma Etching.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 91, doi. 10.1002/1521-3951(200111)228:1<91::AID-PSSB91>3.0.CO;2-D

By:

Edwards, P.R.;
Martin, R.W.;
Kim, H.-S.;
Kim, K.-S.;
Cho, Y.;
Watson, I.M.;
Sands, T.;
Cheung, N.W.;
Dawson, M.D.

Publication type:

Article

Pressure Dependence of Piezoelectric Field in InGaN/GaN Quantum Wells.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 73, doi. 10.1002/1521-3951(200111)228:1<73::AID-PSSB73>3.0.CO;2-5

By:

Vaschenko, G.;
Patel, D.;
Menoni, C.S.;
Gardner, N.F.;
Sun, J.;
Götz, W.;
Tomé, C.N.;
Clausen, B.

Publication type:

Article

Temperature-Independent Stokes Shift in an In0.08Ga0.92N Epitaxial Layer Revealed by Photoluminescence Excitation Spectroscopy.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 55, doi. 10.1002/1521-3951(200111)228:1<55::AID-PSSB55>3.0.CO;2-Y

By:

Kudo, H.;
Murakami, K.;
Ishibashi, H.;
Zheng, R.;
Yamada, Y.;
Taguchi, T.

Publication type:

Article

Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 95, doi. 10.1002/1521-3951(200111)228:1<95::AID-PSSB95>3.0.CO;2-Q

By:

Sakharov, A.V.;
Usikov, A.S.;
Lundin, W.V.;
Tsatsulnikov, A.F.;
Tu, Ru-Chin;
Bin Yin, Sun;
Chi, Jim Y.

Publication type:

Article

Piezoelectric Field-Induced Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 77, doi. 10.1002/1521-3951(200111)228:1<77::AID-PSSB77>3.0.CO;2-I

By:

Lai, C.Y.;
Hsu, T.M.;
Chang, W.-H.;
Tseng, K.-U.;
Lee, C.-M.;
Chuo, C.-C.;
Chyi, J.-I.

Publication type:

Article

Depth Resolved Studies of Indium Content and Strain in InGaN Layers.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 59, doi. 10.1002/1521-3951(200111)228:1<59::AID-PSSB59>3.0.CO;2-A

By:

Pereira, S.;
Correia, M.R.;
Pereira, E.;
O'Donnell, K.P.;
Trager-Cowan, C.;
Sweeney, F.;
Alves, E.;
Sequeira, A.D.;
Franco, N.;
Watson, I.M.

Publication type:

Article

Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 99, doi. 10.1002/1521-3951(200111)228:1<99::AID-PSSB99>3.0.CO;2-2

By:

Shen, X.Q.;
Ide, T.;
Shimizu, M.;
Sasaki, F.;
Okumura, H.

Publication type:

Article

Annealing Behaviour of GaN after Implantation with Hafnium and Indium.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 331, doi. 10.1002/1521-3951(200111)228:1<331::AID-PSSB331>3.0.CO;2-6

By:

Lorenz, K.;
Ruske, F.;
Vianden, R.

Publication type:

Article

The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 203, doi. 10.1002/1521-3951(200111)228:1<203::AID-PSSB203>3.0.CO;2-E

By:

Foxon, C.T.;
Novikov, S.V.;
Liao, Y.;
Winser, A.J.;
Harrison, I.;
Li, T.;
Campion, R.P.;
Staddon, C.R.;
Davis, C.S.

Publication type:

Article

A Perspective of GaAs1-xNx and GaPxN1-x as Heavily Doped Semiconductors.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 243, doi. 10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z

By:

Mascarenhas, A.;
Zhang, Yong;
Seong, M.J.

Publication type:

Article

Raman Characterization of MBE Grown (Al)GaAsN.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 283, doi. 10.1002/1521-3951(200111)228:1<283::AID-PSSB283>3.0.CO;2-J

By:

Hashimoto, A.;
Kitano, T.;
Takahashi, K.;
Kawanishi, H.;
Patane, A.;
Foxon, C.T.;
Yamamoto, A.

Publication type:

Article

Dual Contribution to the Stokes Shift in InGaN-GaN Quantum Wells.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 111, doi. 10.1002/1521-3951(200111)228:1<111::AID-PSSB111>3.0.CO;2-M

By:

Ochalski, T.J.;
Gil, B.;
Bigenwald, P.;
Bugajski, M.;
Wojcik, A.;
Lefebvre, P.;
Taliercio, T.;
Grandjean, N.;
Massies, J.

Publication type:

Article

Self-Assembled Growth of GaN Quantum Dots Using Low-Pressure MOCVD.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 191, doi. 10.1002/1521-3951(200111)228:1<191::AID-PSSB191>3.0.CO;2-R

By:

Miyamura, M.;
Tachibana, K.;
Someya, T.;
Arakawa, Y.

Publication type:

Article

Spatially Resolved Cathodoluminescence Study of As Doped GaN.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 207, doi. 10.1002/1521-3951(200111)228:1<207::AID-PSSB207>3.0.CO;2-Z

By:

Bell, A.;
Ponce, F.A.;
Novikov, S.V.;
Foxon, C.T.;
Harrison, I.

Publication type:

Article

Photoluminescence Excitation Spectroscopy of InxGa1-xN/GaN Multiple Quantum Wells with Various In Compositions.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 133, doi. 10.1002/1521-3951(200111)228:1<133::AID-PSSB133>3.0.CO;2-6

By:

Sasaki, C.;
Iwata, M.;
Yamada, Y.;
Taguchi, T.;
Watanabe, S.;
Minsky, M.S.;
Takeuchi, T.;
Yamada, N.

Publication type:

Article

Indium Distribution within InxGa1-xN Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 173, doi. 10.1002/1521-3951(200111)228:1<173::AID-PSSB173>3.0.CO;2-R

By:

Correia, R.;
Pereira, S.;
Pereira, E.;
Alves, E.;
Gleize, J.;
Frandon, J.;
Renucci, M.A.

Publication type:

Article

Electronic Structure of Heavily and Randomly Nitrogen Doped GaAs near the Fundamental Band Gap.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 287, doi. 10.1002/1521-3951(200111)228:1<287::AID-PSSB287>3.0.CO;2-3

By:

Zhang, Yong;
Francoeur, S.;
Mascarenhas, A.;
Xin, H.P.;
Tu, C.W.

Publication type:

Article

Spectroscopy and Modeling of Carrier Recombination in III-N Heterostructures.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 115, doi. 10.1002/1521-3951(200111)228:1<115::AID-PSSB115>3.0.CO;2-6

By:

Sweeney, P.M.;
Cheung, M.C.;
Chen, F.;
Cartwright, A.N.;
Bour, D.P.;
Kneissl, M.

Publication type:

Article

Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 269, doi. 10.1002/1521-3951(200111)228:1<269::AID-PSSB269>3.0.CO;2-3

By:

Yaguchi, H.;
Matsumoto, S.;
Hijikata, Y.;
Yoshida, S.;
Maeda, T.;
Ogura, M.;
Aoki, D.;
Onabe, K.

Publication type:

Article

On Phonon Confinement Effects and Free Carrier Concentration in GaN Quantum Dots.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 195, doi. 10.1002/1521-3951(200111)228:1<195::AID-PSSB195>3.0.CO;2-B

By:

Kuball, M.;
Gleize, J.;
Tanaka, Satoru;
Aoyagi, Y.

Publication type:

Article

Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 21, doi. 10.1002/1521-3951(200111)228:1<21::AID-PSSB21>3.0.CO;2-R

By:

Yodo, T.;
Ando, H.;
Nosei, D.;
Harada, Y.

Publication type:

Article

Temperature Dependent Optical Properties of InGaN/GaN Quantum Well Structures.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 137, doi. 10.1002/1521-3951(200111)228:1<137::AID-PSSB137>3.0.CO;2-R

By:

Hurst, P.;
Dawson, P.;
Levetas, S.A.;
Godfrey, M.J.;
Watson, I.M.;
Duggan, G.

Publication type:

Article

Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 199, doi. 10.1002/1521-3951(200111)228:1<199::AID-PSSB199>3.0.CO;2-W

By:

Brown, J.;
Elsass, C.;
Poblenz, C.;
Petroff, P.M.;
Speck, I.S.

Publication type:

Article

Carrier Dynamics in Group-III Nitride Low-Dimensional Systems: Localization versus Quantum-Confined Stark Effect.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 65, doi. 10.1002/1521-3951(200111)228:1<65::AID-PSSB65>3.0.CO;2-W

By:

Lefebvre, P.;
Taliercio, T.;
Kalliakos, S.;
Morel, A.;
Zhang, X.B.;
Gallart, M.;
Bretagnon, T.;
Gil, B.;
Grandjean, N.;
Damilano, B.;
Massies, J.

Publication type:

Article

Outgoing Multiphonon Resonant Raman Scattering in Be- and C-Implanted GaN.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 341, doi. 10.1002/1521-3951(200111)228:1<341::AID-PSSB341>3.0.CO;2-2

By:

Sun, W.H.;
Chua, S.J.;
Wang, L.S.;
Zhang, X.H.;
Hao, M.S.

Publication type:

Article

Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 231, doi. 10.1002/1521-3951(200111)228:1<231::AID-PSSB231>3.0.CO;2-A

By:

Cho, H.K.;
Kim, C.S.;
Hong, Y.K.;
Kim, Y.-W.;
Hong, C.-H.;
Suh, E.-K.;
Lee, H.J.

Publication type:

Article

On the Origin of Blue Emission from As-Doped GaN.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 213, doi. 10.1002/1521-3951(200111)228:1<213::AID-PSSB213>3.0.CO;2-A

By:

Harrison, I.;
Novikov, S.V.;
Li, T.;
Campion, R.P.;
Staddon, C.R.;
Davis, C.S.;
Liao, Y.;
Winser, A.J.;
Foxon, C.T.

Publication type:

Article

Evolution of Electron States with Composition in GaAsN Alloys.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 253, doi. 10.1002/1521-3951(200111)228:1<253::AID-PSSB253>3.0.CO;2-V

By:

Kent, P.R.C.;
Zunger, A.

Publication type:

Article

Defect-Related Donors, Acceptors, and Traps in GaN.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 293, doi. 10.1002/1521-3951(200111)228:1<293::AID-PSSB293>3.0.CO;2-F

By:

Look, D.C.

Publication type:

Article

Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 121, doi. 10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I

By:

Feng, Shih-Wei;
Cheng, Yung-Chen;
Liao, Chi-Chih;
Chung, Yi-Yin;
Liu, Chih-Wen;
Yang, Chih-Chung;
Lin, Yen-Sheng;
Ma, Kung-Jeng;
Chyi, Jen-Inn

Publication type:

Article

Capture Kinetics of Electron Traps in MBE-Grown n-GaN.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 309, doi. 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N

By:

Hierro, A.;
Arehart, A.R.;
Heying, B.;
Hansen, M.;
Speck, J.S.;
Mishra, U.K.;
DenBaars, S.P.;
Ringel, S.A.

Publication type:

Article

Structural Properties of GaN Grown by Pendeo-Epitaxy with In-Doping.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 235, doi. 10.1002/1521-3951(200111)228:1<235::AID-PSSB235>3.0.CO;2-V

By:

Kue Hong, Young;
Sun Kim, Chi;
Sub Jung, Hung;
Hong, Chang-Hee;
Hong Kim, Min;
Leem, Shi-Jong;
Koun Cho, Hyung;
Yong Lee, Jeong

Publication type:

Article

Phase Separation in InGaN Epitaxial Layers.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 1, p. 161, doi. 10.1002/1521-3951(200111)228:1<161::AID-PSSB161>3.0.CO;2-2

By:

Westmeyer, A.N.;
Mahajan, S.

Publication type:

Article