Works matching IS 03701972 AND DT 2001 AND VI 228 AND IP 1

Results: 72

Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 153, doi. 10.1002/1521-3951(200111)228:1<153::AID-PSSB153>3.0.CO;2-Z
By:
- Kaneta, A.;
- Marutsuki, G.;
- Okamoto, K.;
- Kawakami, Y.;
- Nakagawa, Y.;
- Shinomiya, G.;
- Mukai, T.;
- Fujita, Sg.
Publication type:
Article
A Comparison of Rutherford Backscattering Spectroscopy and X-Ray Diffraction to Determine the Composition of Thick InGaN Epilayers.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 41, doi. 10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N
By:
- Srinivasan, S.;
- Liu, R.;
- Bertram, F.;
- Ponce, F.A.;
- Tanaka, S.;
- Omiya, H.;
- Nakagawa, Y.
Publication type:
Article
Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method with Subpicosecond Pulsed Laser.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 81, doi. 10.1002/1521-3951(200111)228:1<81::AID-PSSB81>3.0.CO;2-F
By:
- Okamoto, K.;
- Kaneta, A.;
- Inoue, K.;
- Kawakami, Y.;
- Terazima, M.;
- Shinomiya, G.;
- Mukai, T.;
- Fujita, Sg.
Publication type:
Article
Growth Temperature Dependences of MOVPE InN on Sapphire Substrates.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 5, doi. 10.1002/1521-3951(200111)228:1<5::AID-PSSB5>3.0.CO;2-E
By:
- Yamamoto, A.;
- Murakami, Y.;
- Koide, K.;
- Adachi, M.;
- Hashimoto, A.
Publication type:
Article
Optical Characterization of InGaN/GaN MQW Structures without In Phase Separation.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 157, doi. 10.1002/1521-3951(200111)228:1<157::AID-PSSB157>3.0.CO;2-J
By:
- Monemar, B.;
- Paskov, P.P.;
- Pozina, G.;
- Paskova, T.;
- Bergman, J.P.;
- Iwaya, M.;
- Nitta, S.;
- Amano, H.;
- Akasaki, I.
Publication type:
Article
Cathodoluminescence Investigations of Interfaces in InGaN/GaN/Sapphire Structures.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 179, doi. 10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3
By:
- Godlewski, M.;
- Goldys, E.M.;
- Butcher, K.S.A.;
- Phillips, M.R.;
- Pakula, K.;
- Baranowski, J.M.
Publication type:
Article
Local Structure Analysis of Ga1-xInxN Alloy Using Extended X-Ray Absorption Fine Structure Measurements.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 45, doi. 10.1002/1521-3951(200111)228:1<45::AID-PSSB45>3.0.CO;2-#
By:
- Miyajima, T.;
- Kudo, Y.;
- Liu, K.-Y.;
- Uruga, T.;
- Asatsuma, T.;
- Hino, T.;
- Kobayashi, T.
Publication type:
Article
Temperature Dependence and Reflection of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 85, doi. 10.1002/1521-3951(200111)228:1<85::AID-PSSB85>3.0.CO;2-S
By:
- Özgür, Ü.;
- Lee, C.-W.;
- Everitt, H.O.
Publication type:
Article
Anisotropic Superconductivity of InN Grown by Molecular Beam Epitaxy on Sapphire (0001).
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 9, doi. 10.1002/1521-3951(200111)228:1<9::AID-PSSB9>3.0.CO;2-Z
By:
- Inushima, T.;
- Vecksin, V.V.;
- Ivanov, S.V.;
- Davydov, V.Y.;
- Sakon, T.;
- Motokawa, M.
Publication type:
Article
A Novel Two-Step Method for Improvement of MOVPE Grown InN Film on GaP(111)B Substrate.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 27, doi. 10.1002/1521-3951(200111)228:1<27::AID-PSSB27>3.0.CO;2-S
By:
- Bhuiyan, A.G.;
- Yamamoto, A.;
- Hashimoto, A.
Publication type:
Article
Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 49, doi. 10.1002/1521-3951(200111)228:1<49::AID-PSSB49>3.0.CO;2-C
By:
- Waltereit, P.;
- Brandt, O.;
- Ploog, K.H.;
- Tagliente, M.A.;
- Tapfer, L.
Publication type:
Article
Passivation and Doping due to Hydrogen in III-Nitrides.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 303, doi. 10.1002/1521-3951(200111)228:1<303::AID-PSSB303>3.0.CO;2-A
By:
- Limpijumnong, S.;
- Van de Walle, C.G.
Publication type:
Article
Implantation Induced Defect States in Gallium Nitride and Their Annealing Behaviour.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 325, doi. 10.1002/1521-3951(200111)228:1<325::AID-PSSB325>3.0.CO;2-V
By:
- Krtschil, A.;
- Kielburg, A.;
- Witte, H.;
- Krost, A.;
- Christen, J.;
- Wenzel, A.;
- Rauschenbach, B.
Publication type:
Article
Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 273, doi. 10.1002/1521-3951(200111)228:1<273::AID-PSSB273>3.0.CO;2-N
By:
- Yaguchi, H.;
- Kikuchi, S.;
- Hijikata, Y.;
- Yoshida, S.;
- Aoki, D.;
- Onabe, K.
Publication type:
Article
Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 141, doi. 10.1002/1521-3951(200111)228:1<141::AID-PSSB141>3.0.CO;2-A
By:
- Yunovich, A.E.;
- Kudryashov, V.E.
Publication type:
Article
The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 219, doi. 10.1002/1521-3951(200111)228:1<219::AID-PSSB219>3.0.CO;2-N
By:
- Foxon, C.T.;
- Novikov, S.V.;
- Campion, R.P.;
- Liao, Y.;
- Winser, A.J.;
- Harrison, I.
Publication type:
Article
Phonon Modes of InxGa1-xAs1-yNy Measured by Far Infrared Spectroscopic Ellipsometry.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 259, doi. 10.1002/1521-3951(200111)228:1<259::AID-PSSB259>3.0.CO;2-7
By:
- Leibiger, G.;
- Gottschalch, V.;
- Schubert, M.
Publication type:
Article
InGaN/GaN Quantum Well Microcavities Formed by Laser Lift-Off and Plasma Etching.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 91, doi. 10.1002/1521-3951(200111)228:1<91::AID-PSSB91>3.0.CO;2-D
By:
- Edwards, P.R.;
- Martin, R.W.;
- Kim, H.-S.;
- Kim, K.-S.;
- Cho, Y.;
- Watson, I.M.;
- Sands, T.;
- Cheung, N.W.;
- Dawson, M.D.
Publication type:
Article
Pressure Dependence of Piezoelectric Field in InGaN/GaN Quantum Wells.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 73, doi. 10.1002/1521-3951(200111)228:1<73::AID-PSSB73>3.0.CO;2-5
By:
- Vaschenko, G.;
- Patel, D.;
- Menoni, C.S.;
- Gardner, N.F.;
- Sun, J.;
- Götz, W.;
- Tomé, C.N.;
- Clausen, B.
Publication type:
Article
Temperature-Independent Stokes Shift in an In0.08Ga0.92N Epitaxial Layer Revealed by Photoluminescence Excitation Spectroscopy.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 55, doi. 10.1002/1521-3951(200111)228:1<55::AID-PSSB55>3.0.CO;2-Y
By:
- Kudo, H.;
- Murakami, K.;
- Ishibashi, H.;
- Zheng, R.;
- Yamada, Y.;
- Taguchi, T.
Publication type:
Article
Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 95, doi. 10.1002/1521-3951(200111)228:1<95::AID-PSSB95>3.0.CO;2-Q
By:
- Sakharov, A.V.;
- Usikov, A.S.;
- Lundin, W.V.;
- Tsatsulnikov, A.F.;
- Tu, Ru-Chin;
- Bin Yin, Sun;
- Chi, Jim Y.
Publication type:
Article
Piezoelectric Field-Induced Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 77, doi. 10.1002/1521-3951(200111)228:1<77::AID-PSSB77>3.0.CO;2-I
By:
- Lai, C.Y.;
- Hsu, T.M.;
- Chang, W.-H.;
- Tseng, K.-U.;
- Lee, C.-M.;
- Chuo, C.-C.;
- Chyi, J.-I.
Publication type:
Article
Depth Resolved Studies of Indium Content and Strain in InGaN Layers.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 59, doi. 10.1002/1521-3951(200111)228:1<59::AID-PSSB59>3.0.CO;2-A
By:
- Pereira, S.;
- Correia, M.R.;
- Pereira, E.;
- O'Donnell, K.P.;
- Trager-Cowan, C.;
- Sweeney, F.;
- Alves, E.;
- Sequeira, A.D.;
- Franco, N.;
- Watson, I.M.
Publication type:
Article
Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 99, doi. 10.1002/1521-3951(200111)228:1<99::AID-PSSB99>3.0.CO;2-2
By:
- Shen, X.Q.;
- Ide, T.;
- Shimizu, M.;
- Sasaki, F.;
- Okumura, H.
Publication type:
Article
Annealing Behaviour of GaN after Implantation with Hafnium and Indium.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 331, doi. 10.1002/1521-3951(200111)228:1<331::AID-PSSB331>3.0.CO;2-6
By:
- Lorenz, K.;
- Ruske, F.;
- Vianden, R.
Publication type:
Article
The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 203, doi. 10.1002/1521-3951(200111)228:1<203::AID-PSSB203>3.0.CO;2-E
By:
- Foxon, C.T.;
- Novikov, S.V.;
- Liao, Y.;
- Winser, A.J.;
- Harrison, I.;
- Li, T.;
- Campion, R.P.;
- Staddon, C.R.;
- Davis, C.S.
Publication type:
Article
A Perspective of GaAs1-xNx and GaPxN1-x as Heavily Doped Semiconductors.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 243, doi. 10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z
By:
- Mascarenhas, A.;
- Zhang, Yong;
- Seong, M.J.
Publication type:
Article
Raman Characterization of MBE Grown (Al)GaAsN.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 283, doi. 10.1002/1521-3951(200111)228:1<283::AID-PSSB283>3.0.CO;2-J
By:
- Hashimoto, A.;
- Kitano, T.;
- Takahashi, K.;
- Kawanishi, H.;
- Patane, A.;
- Foxon, C.T.;
- Yamamoto, A.
Publication type:
Article
Dual Contribution to the Stokes Shift in InGaN-GaN Quantum Wells.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 111, doi. 10.1002/1521-3951(200111)228:1<111::AID-PSSB111>3.0.CO;2-M
By:
- Ochalski, T.J.;
- Gil, B.;
- Bigenwald, P.;
- Bugajski, M.;
- Wojcik, A.;
- Lefebvre, P.;
- Taliercio, T.;
- Grandjean, N.;
- Massies, J.
Publication type:
Article
Self-Assembled Growth of GaN Quantum Dots Using Low-Pressure MOCVD.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 191, doi. 10.1002/1521-3951(200111)228:1<191::AID-PSSB191>3.0.CO;2-R
By:
- Miyamura, M.;
- Tachibana, K.;
- Someya, T.;
- Arakawa, Y.
Publication type:
Article
Spatially Resolved Cathodoluminescence Study of As Doped GaN.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 207, doi. 10.1002/1521-3951(200111)228:1<207::AID-PSSB207>3.0.CO;2-Z
By:
- Bell, A.;
- Ponce, F.A.;
- Novikov, S.V.;
- Foxon, C.T.;
- Harrison, I.
Publication type:
Article
Photoluminescence Excitation Spectroscopy of InxGa1-xN/GaN Multiple Quantum Wells with Various In Compositions.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 133, doi. 10.1002/1521-3951(200111)228:1<133::AID-PSSB133>3.0.CO;2-6
By:
- Sasaki, C.;
- Iwata, M.;
- Yamada, Y.;
- Taguchi, T.;
- Watanabe, S.;
- Minsky, M.S.;
- Takeuchi, T.;
- Yamada, N.
Publication type:
Article
Indium Distribution within InxGa1-xN Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 173, doi. 10.1002/1521-3951(200111)228:1<173::AID-PSSB173>3.0.CO;2-R
By:
- Correia, R.;
- Pereira, S.;
- Pereira, E.;
- Alves, E.;
- Gleize, J.;
- Frandon, J.;
- Renucci, M.A.
Publication type:
Article
Electronic Structure of Heavily and Randomly Nitrogen Doped GaAs near the Fundamental Band Gap.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 287, doi. 10.1002/1521-3951(200111)228:1<287::AID-PSSB287>3.0.CO;2-3
By:
- Zhang, Yong;
- Francoeur, S.;
- Mascarenhas, A.;
- Xin, H.P.;
- Tu, C.W.
Publication type:
Article
Spectroscopy and Modeling of Carrier Recombination in III-N Heterostructures.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 115, doi. 10.1002/1521-3951(200111)228:1<115::AID-PSSB115>3.0.CO;2-6
By:
- Sweeney, P.M.;
- Cheung, M.C.;
- Chen, F.;
- Cartwright, A.N.;
- Bour, D.P.;
- Kneissl, M.
Publication type:
Article
Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 269, doi. 10.1002/1521-3951(200111)228:1<269::AID-PSSB269>3.0.CO;2-3
By:
- Yaguchi, H.;
- Matsumoto, S.;
- Hijikata, Y.;
- Yoshida, S.;
- Maeda, T.;
- Ogura, M.;
- Aoki, D.;
- Onabe, K.
Publication type:
Article
On Phonon Confinement Effects and Free Carrier Concentration in GaN Quantum Dots.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 195, doi. 10.1002/1521-3951(200111)228:1<195::AID-PSSB195>3.0.CO;2-B
By:
- Kuball, M.;
- Gleize, J.;
- Tanaka, Satoru;
- Aoyagi, Y.
Publication type:
Article
Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 21, doi. 10.1002/1521-3951(200111)228:1<21::AID-PSSB21>3.0.CO;2-R
By:
- Yodo, T.;
- Ando, H.;
- Nosei, D.;
- Harada, Y.
Publication type:
Article
Temperature Dependent Optical Properties of InGaN/GaN Quantum Well Structures.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 137, doi. 10.1002/1521-3951(200111)228:1<137::AID-PSSB137>3.0.CO;2-R
By:
- Hurst, P.;
- Dawson, P.;
- Levetas, S.A.;
- Godfrey, M.J.;
- Watson, I.M.;
- Duggan, G.
Publication type:
Article
Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 199, doi. 10.1002/1521-3951(200111)228:1<199::AID-PSSB199>3.0.CO;2-W
By:
- Brown, J.;
- Elsass, C.;
- Poblenz, C.;
- Petroff, P.M.;
- Speck, I.S.
Publication type:
Article
Carrier Dynamics in Group-III Nitride Low-Dimensional Systems: Localization versus Quantum-Confined Stark Effect.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 65, doi. 10.1002/1521-3951(200111)228:1<65::AID-PSSB65>3.0.CO;2-W
By:
- Lefebvre, P.;
- Taliercio, T.;
- Kalliakos, S.;
- Morel, A.;
- Zhang, X.B.;
- Gallart, M.;
- Bretagnon, T.;
- Gil, B.;
- Grandjean, N.;
- Damilano, B.;
- Massies, J.
Publication type:
Article
Outgoing Multiphonon Resonant Raman Scattering in Be- and C-Implanted GaN.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 341, doi. 10.1002/1521-3951(200111)228:1<341::AID-PSSB341>3.0.CO;2-2
By:
- Sun, W.H.;
- Chua, S.J.;
- Wang, L.S.;
- Zhang, X.H.;
- Hao, M.S.
Publication type:
Article
Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 231, doi. 10.1002/1521-3951(200111)228:1<231::AID-PSSB231>3.0.CO;2-A
By:
- Cho, H.K.;
- Kim, C.S.;
- Hong, Y.K.;
- Kim, Y.-W.;
- Hong, C.-H.;
- Suh, E.-K.;
- Lee, H.J.
Publication type:
Article
On the Origin of Blue Emission from As-Doped GaN.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 213, doi. 10.1002/1521-3951(200111)228:1<213::AID-PSSB213>3.0.CO;2-A
By:
- Harrison, I.;
- Novikov, S.V.;
- Li, T.;
- Campion, R.P.;
- Staddon, C.R.;
- Davis, C.S.;
- Liao, Y.;
- Winser, A.J.;
- Foxon, C.T.
Publication type:
Article
Evolution of Electron States with Composition in GaAsN Alloys.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 253, doi. 10.1002/1521-3951(200111)228:1<253::AID-PSSB253>3.0.CO;2-V
By:
- Kent, P.R.C.;
- Zunger, A.
Publication type:
Article
Defect-Related Donors, Acceptors, and Traps in GaN.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 293, doi. 10.1002/1521-3951(200111)228:1<293::AID-PSSB293>3.0.CO;2-F
By:
- Look, D.C.
Publication type:
Article
Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 121, doi. 10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I
By:
- Feng, Shih-Wei;
- Cheng, Yung-Chen;
- Liao, Chi-Chih;
- Chung, Yi-Yin;
- Liu, Chih-Wen;
- Yang, Chih-Chung;
- Lin, Yen-Sheng;
- Ma, Kung-Jeng;
- Chyi, Jen-Inn
Publication type:
Article
Capture Kinetics of Electron Traps in MBE-Grown n-GaN.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 309, doi. 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N
By:
- Hierro, A.;
- Arehart, A.R.;
- Heying, B.;
- Hansen, M.;
- Speck, J.S.;
- Mishra, U.K.;
- DenBaars, S.P.;
- Ringel, S.A.
Publication type:
Article
Structural Properties of GaN Grown by Pendeo-Epitaxy with In-Doping.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 235, doi. 10.1002/1521-3951(200111)228:1<235::AID-PSSB235>3.0.CO;2-V
By:
- Kue Hong, Young;
- Sun Kim, Chi;
- Sub Jung, Hung;
- Hong, Chang-Hee;
- Hong Kim, Min;
- Leem, Shi-Jong;
- Koun Cho, Hyung;
- Yong Lee, Jeong
Publication type:
Article
Phase Separation in InGaN Epitaxial Layers.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 1, p. 161, doi. 10.1002/1521-3951(200111)228:1<161::AID-PSSB161>3.0.CO;2-2
By:
- Westmeyer, A.N.;
- Mahajan, S.
Publication type:
Article