Works matching IS 03701972 AND DT 2001 AND VI 227 AND IP 1
Results: 8
Atomic Resolution Scanning Transmission Electron Microscopy.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 229, doi. 10.1002/1521-3951(200109)227:1<229::AID-PSSB229>3.0.CO;2-F
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Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 177, doi. 10.1002/1521-3951(200109)227:1<177::AID-PSSB177>3.0.CO;2-7
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Epitaxial Lateral Overgrowth of GaN.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 1, doi. 10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO;2-Q
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Ab initio Analysis of Surface Structure and Adatom Kinetics of Group-III Nitrides.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 93, doi. 10.1002/1521-3951(200109)227:1<93::AID-PSSB93>3.0.CO;2-Y
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Topological Analysis of Defects in Epitaxial Nitride Films and Interfaces.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 45, doi. 10.1002/1521-3951(200109)227:1<45::AID-PSSB45>3.0.CO;2-W
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Atomic Computer Simulation: Large Scale Calculations of Defect Properties by Empirical Potentials.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 151, doi. 10.1002/1521-3951(200109)227:1<151::AID-PSSB151>3.0.CO;2-2
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Extracting Quantitative Information from High Resolution Electron Microscopy.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 247, doi. 10.1002/1521-3951(200109)227:1<247::AID-PSSB247>3.0.CO;2-F
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Tight Binding for Complex Semiconductor Systems.
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- Physica Status Solidi (B), 2001, v. 227, n. 1, p. 115, doi. 10.1002/1521-3951(200109)227:1<115::AID-PSSB115>3.0.CO;2-2
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