Works matching IS 03701972 AND DT 2000 AND VI 222 AND IP 1

Results: 34

Optical Beam Induced Current Investigations of Particle Detectors.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 245, doi. 10.1002/1521-3951(200011)222:1<245::AID-PSSB245>3.0.CO;2-Y

By:

Castaldini, A.;
Cavallini, A.;
Polenta, L.

Publication type:

Article

Hardening by Thermal Vacancies in the B2 Region of the Fe-Al Phase Diagram.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 35, doi. 10.1002/1521-3951(200011)222:1<35::AID-PSSB35>3.0.CO;2-8

By:

Kratochvil, P.;
Hanus, P.;
Novotná, Z.

Publication type:

Article

The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 75, doi. 10.1002/1521-3951(200011)222:1<75::AID-PSSB75>3.0.CO;2-0

By:

Samant, A.V.;
Hong, M.H.;
Pirouz, P.

Publication type:

Article

Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 179, doi. 10.1002/1521-3951(200011)222:1<179::AID-PSSB179>3.0.CO;2-A

By:

Ma, Dongge;
Aguiar, M.;
Hümmelgen, I.A.

Publication type:

Article

Defects Due to Metal Silicide Precipitation in Microelectronic Device Manufacturing: The Unlovely Face of Transition Metal Silicides.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 303, doi. 10.1002/1521-3951(200011)222:1<303::AID-PSSB303>3.0.CO;2-H

By:

Kolbesen, B.O.;
Cerva, H.

Publication type:

Article

Iridium-Related Deep Levels in n-Type Silicon.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 251, doi. 10.1002/1521-3951(200011)222:1<251::AID-PSSB251>3.0.CO;2-9

By:

Bollmann, J.;
Knack, S.;
Weber, J.;
ISOLDE collaboration

Publication type:

Article

Latent Hardening of Germanium Crystals.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 41, doi. 10.1002/1521-3951(200011)222:1<41::AID-PSSB41>3.0.CO;2-U

By:

Alexander, H.;
Crawford, J.L.

Publication type:

Article

Atomistic Modeling of Misfit Dislocation Network Variants for Ge/Si(111) Interfaces.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 101, doi. 10.1002/1521-3951(200011)222:1<101::AID-PSSB101>3.0.CO;2-X

By:

Dornheim, M.;
Teichler, H.

Publication type:

Article

About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 141, doi. 10.1002/1521-3951(200011)222:1<141::AID-PSSB141>3.0.CO;2-H

By:

Pizzini, S.;
Acciarri, M.;
Leoni, E.;
Le Donne, A.

Publication type:

Article

Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 295, doi. 10.1002/1521-3951(200011)222:1<295::AID-PSSB295>3.0.CO;2-E

By:

Dhar, S.;
Milosavljevic, M.;
Bibic, N.;
Lieb, K.P.

Publication type:

Article

Low Temperature, High Stress Plastic Deformation of Semiconductors: The Silicon Case.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 63, doi. 10.1002/1521-3951(200011)222:1<63::AID-PSSB63>3.0.CO;2-E

By:

Rabier, J.;
Demenet, J.L.

Publication type:

Article

On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 219, doi. 10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO;2-U

By:

Falster, R.;
Voronkov, V.V.;
Quast, F.

Publication type:

Article

HREM Image Analysis of III-V Heterostructures Based on Neural Networks.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 185, doi. 10.1002/1521-3951(200011)222:1<185::AID-PSSB185>3.0.CO;2-M

By:

Hillebrand, R.;
Kirschner, H.;
Werner, P.;
Gösele, U.

Publication type:

Article

Precipitates in Ribbon Grown Solar Silicon.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 353, doi. 10.1002/1521-3951(200011)222:1<353::AID-PSSB353>3.0.CO;2-Y

By:

Gottschalk, H.

Publication type:

Article

Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 261, doi. 10.1002/1521-3951(200011)222:1<261::AID-PSSB261>3.0.CO;2-5

By:

Istratov, A.A.;
Flink, C.;
Weber, E.R.

Publication type:

Article

Non-Planar Slip and Cross-Slip at the Onset of Plastic Deformation in Silicon.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 51, doi. 10.1002/1521-3951(200011)222:1<51::AID-PSSB51>3.0.CO;2-S

By:

Vallino, F.;
Jacques, A.;
George, A.

Publication type:

Article

Possible Polymerisation at Dislocations in C60 Crystals.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 111, doi. 10.1002/1521-3951(200011)222:1<111::AID-PSSB111>3.0.CO;2-T

By:

Dyachenko-Dekov, D.V.;
Iunin, Yu.L.;
Izotov, A.N.;
Kveder, V.V.;
Nikolaev, R.K.;
Orlov, V.I.;
Ossipyan, Yu.A.;
Sidorov, N.S.;
Steinman, E.A.

Publication type:

Article

Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 151, doi. 10.1002/1521-3951(200011)222:1<151::AID-PSSB151>3.0.CO;2-D

By:

Figielski, T.;
Wosiński, T.;
Mąkosa, A.

Publication type:

Article

Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon. A Reservoir of Lifetime Killers.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 379, doi. 10.1002/1521-3951(200011)222:1<379::AID-PSSB379>3.0.CO;2-2

By:

Karg, D.;
Pensl, G.;
Schulz, M.;
Hässler, C.;
Koch, W.

Publication type:

Article

Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 133, doi. 10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D

By:

Jones, R.;
Coomer, B.J.;
Goss, J.P.;
Öberg, S.;
Briddon, P.R.

Publication type:

Article

Strain Induced Electronic Alterations of Dislocation Mobility GeSi Layers.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 95, doi. 10.1002/1521-3951(200011)222:1<95::AID-PSSB95>3.0.CO;2-X

By:

Albrecht, M.;
Strunk, H.P.

Publication type:

Article

Influence of Dislocations on I- V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 159, doi. 10.1002/1521-3951(200011)222:1<159::AID-PSSB159>3.0.CO;2-I

By:

Barbot, J.F.;
Blanchard, C.;
Demenet, J.L.

Publication type:

Article

Electron Energy-Loss Near-Edge Structure Studies of a Cu/(11-20)α-Al2O3 Interface.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 199, doi. 10.1002/1521-3951(200011)222:1<199::AID-PSSB199>3.0.CO;2-2

By:

Scheu, C.;
Stein, W.;
Rühle, M.

Publication type:

Article

Two-Dimensional Mapping of pn Junctions by Electron Holography.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 213, doi. 10.1002/1521-3951(200011)222:1<213::AID-PSSB213>3.0.CO;2-H

By:

Rau, W.D.;
Schwander, P.;
Ourmazd, A.

Publication type:

Article

Phosphorus Diffusion Gettering of Platinum in Silicon: Formation of Near-Surface Precipitates.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 327, doi. 10.1002/1521-3951(200011)222:1<327::AID-PSSB327>3.0.CO;2-U

By:

Seibt, M.;
Döller, A.;
Kveder, V.;
Sattler, A.;
Zozime, A.

Publication type:

Article

Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 367, doi. 10.1002/1521-3951(200011)222:1<367::AID-PSSB367>3.0.CO;2-E

By:

Krüger, O.;
Seifert, W.;
Kittler, M.;
Vyvenko, O.F.

Publication type:

Article

Special Defects in Quasicrystals.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 121, doi. 10.1002/1521-3951(200011)222:1<121::AID-PSSB121>3.0.CO;2-P

By:

Janot, C.;
Loreto, L.;
Farinato, R.

Publication type:

Article

Improvements and Limits of the Open Circuit Voltage of mc-Silicon Solar Cells.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 389, doi. 10.1002/1521-3951(200011)222:1<389::AID-PSSB389>3.0.CO;2-Z

By:

Schindler, R.;
Warta, W.

Publication type:

Article

Activation Energies of Plasticity and Lattice Properties of Cubic Crystal Systems.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 25, doi. 10.1002/1521-3951(200011)222:1<25::AID-PSSB25>3.0.CO;2-A

By:

Siethoff, H.

Publication type:

Article

CEMS Study of the Interface Formation in the Fe-Si System during Pulsed Laser Deposition.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 279, doi. 10.1002/1521-3951(200011)222:1<279::AID-PSSB279>3.0.CO;2-6

By:

Zenkevitch, A.;
Fanciulli, M.;
Weyer, G.;
Khabelashvili, I.

Publication type:

Article

Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001).

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 169, doi. 10.1002/1521-3951(200011)222:1<169::AID-PSSB169>3.0.CO;2-E

By:

Schreiber, J.;
Hilpert, U.;
Höring, L.;
Worschech, L.;
König, B.;
Ossau, W.;
Waag, A.;
Landwehr, G.

Publication type:

Article

Investigation of Current Losses in Crystalline Silicon Solar Cells by a New Topographical Magnetic Field Technique (CASQ).

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 337, doi. 10.1002/1521-3951(200011)222:1<337::AID-PSSB337>3.0.CO;2-Q

By:

Kabs, J.;
Möller, H.J.

Publication type:

Article

Impact of Research on Defects in Silicon on the Microelectronic Industry.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 5, doi. 10.1002/1521-3951(200011)222:1<5::AID-PSSB5>3.0.CO;2-L

By:

Bergholz, W.;
Gilles, D.

Publication type:

Article

Gettering of Diffused Au and of Cu and Ni Contamination in Silicon by Cavities Induced by High Energy He Implantation.

Published in:

Physica Status Solidi (B), 2000, v. 222, n. 1, p. 319, doi. 10.1002/1521-3951(200011)222:1<319::AID-PSSB319>3.0.CO;2-Q

By:

El Bouayadi, R.;
Regula, G.;
Pichaud, B.;
Lancin, M.;
Dubois, CR.;
Ntsoenzok, E.

Publication type:

Article

Works matching IS 03701972 AND DT 2000 AND VI 222 AND IP 1

Optical Beam Induced Current Investigations of Particle Detectors.

Hardening by Thermal Vacancies in the B2 Region of the Fe-Al Phase Diagram.

The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals.

Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films.

Defects Due to Metal Silicide Precipitation in Microelectronic Device Manufacturing: The Unlovely Face of Transition Metal Silicides.

Iridium-Related Deep Levels in n-Type Silicon.

Latent Hardening of Germanium Crystals.

Atomistic Modeling of Misfit Dislocation Network Variants for Ge/Si(111) Interfaces.

About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation.

Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers.

Low Temperature, High Stress Plastic Deformation of Semiconductors: The Silicon Case.

On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing.

HREM Image Analysis of III-V Heterostructures Based on Neural Networks.

Precipitates in Ribbon Grown Solar Silicon.

Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers.

Non-Planar Slip and Cross-Slip at the Onset of Plastic Deformation in Silicon.

Possible Polymerisation at Dislocations in C<sub>60</sub> Crystals.

Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors.

Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon. A Reservoir of Lifetime Killers.

Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si.

Strain Induced Electronic Alterations of Dislocation Mobility GeSi Layers.

Influence of Dislocations on I- V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC.

Electron Energy-Loss Near-Edge Structure Studies of a Cu/(11-20)α-Al<sub>2</sub>O<sub>3</sub> Interface.

Two-Dimensional Mapping of pn Junctions by Electron Holography.

Phosphorus Diffusion Gettering of Platinum in Silicon: Formation of Near-Surface Precipitates.

Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon.

Special Defects in Quasicrystals.

Improvements and Limits of the Open Circuit Voltage of mc-Silicon Solar Cells.

Activation Energies of Plasticity and Lattice Properties of Cubic Crystal Systems.

CEMS Study of the Interface Formation in the Fe-Si System during Pulsed Laser Deposition.

Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001).

Investigation of Current Losses in Crystalline Silicon Solar Cells by a New Topographical Magnetic Field Technique (CASQ).

Impact of Research on Defects in Silicon on the Microelectronic Industry.

Gettering of Diffused Au and of Cu and Ni Contamination in Silicon by Cavities Induced by High Energy He Implantation.