Works matching IS 03701972 AND DT 1999 AND VI 216 AND IP 1

Results: 152

Strain Distribution in GaN Hexagons Measured by Raman Spectroscopy.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 775, doi. 10.1002/(SICI)1521-3951(199911)216:1<775::AID-PSSB775>3.0.CO;2-X

By:

Seitz, R.;
Monteiro, T.;
Pereira, E.;
di Forte-Poisson, M.

Publication type:

Article

Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 683, doi. 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4

By:

Amano, H.;
Iwaya, M.;
Hayashi, N.;
Kashima, T.;
Nitta, S.;
Wetzel, C.;
Akasaki, I.

Publication type:

Article

Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 511, doi. 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7

By:

Krestnikov, I.L.;
Lundin, W.V.;
Sakharov, A.V.;
Semenov, V.A.;
Usikov, A.S.;
Tsatsulnikov, A.F.;
Alferov, Zh.I.;
Ledentsov, N.N.;
Hoffmann, A.;
Bimberg, D.

Publication type:

Article

Green Emission from Tb-Doped GaN Grown by MOVPE.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 625, doi. 10.1002/(SICI)1521-3951(199911)216:1<625::AID-PSSB625>3.0.CO;2-K

By:

Hara, K.;
Ohtake, N.;
Ishii, K.

Publication type:

Article

Defect Complexes in Highly Mg-Doped GaN Studied by Raman Spectroscopy.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 551, doi. 10.1002/(SICI)1521-3951(199911)216:1<551::AID-PSSB551>3.0.CO;2-S

By:

Kaschner, A.;
Kaczmarczyk, G.;
Hoffmann, A.;
Thomsen, C.;
Birkle, U.;
Einfeldt, S.;
Hommel, D.

Publication type:

Article

Phonons in Hexagonal InN. Experiment and Theory.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 779, doi. 10.1002/(SICI)1521-3951(199911)216:1<779::AID-PSSB779>3.0.CO;2-H

By:

Davydov, V.Yu.;
Klochikhin, A.A.;
Smirnov, M.B.;
Emtsev, V.V.;
Petrikov, V.D.;
Abroyan, I.A.;
Titov, A.I.;
Goncharuk, I.N.;
Smirnov, A.N.;
Mamutin, V.V.;
Ivanov, S.V.;
Inushima, T.

Publication type:

Article

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 533, doi. 10.1002/(SICI)1521-3951(199911)216:1<533::AID-PSSB533>3.0.CO;2-S

By:

Shmidt, N.M.;
Davydov, D.V.;
Emtsev, V.V.;
Krestnikov, I.L.;
Lebedev, A.A.;
Lundin, W.V.;
Poloskin, D.S.;
Sakharov, A.V.;
Usikov, A.S.;
Osinsky, A.V.

Publication type:

Article

Calculation of Optical Transition Energies for Self-Formed InGaN Quantum Dots.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 441, doi. 10.1002/(SICI)1521-3951(199911)216:1<441::AID-PSSB441>3.0.CO;2-#

By:

Martin, R.W.;
O'Donnell, K.P.

Publication type:

Article

Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric Spectroscopy.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 629, doi. 10.1002/(SICI)1521-3951(199911)216:1<629::AID-PSSB629>3.0.CO;2-4

By:

Maruyama, T.;
Sasaki, H.;
Morishima, S.;
Akimoto, K.

Publication type:

Article

Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 481, doi. 10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K

By:

Bigenwald, P.;
Kavokin, A.;
Christol, P.;
Gil, B.;
Lefebvre, P.

Publication type:

Article

Photoluminescence Characterisation of Triangular Lattices of Holes and Pillars Etched in GaN Epilayers.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 669, doi. 10.1002/(SICI)1521-3951(199911)216:1<669::AID-PSSB669>3.0.CO;2-P

By:

Coquillat, D.;
Ribayrol, A.;
De La Rue, R.M.;
Girard, P.;
Briot, O.;
Aulombard, R.L.;
Cassagne, D.;
Jouanin, C.

Publication type:

Article

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 5, doi. 10.1002/(SICI)1521-3951(199911)216:1<5::AID-PSSB5>3.0.CO;2-F

By:

Kornitzer, K.;
Ebner, T.;
Grehl, M.;
Thonke, K.;
Sauer, R.;
Kirchner, C.;
Schwegler, V.;
Kamp, M.;
Leszczynski, M.;
Grzegory, I.;
Porowski, S.

Publication type:

Article

Screening of the Polarization Field in InGaN Single Quantum Wells.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 423, doi. 10.1002/(SICI)1521-3951(199911)216:1<423::AID-PSSB423>3.0.CO;2-#

By:

Harris, J.C.;
Kako, S.;
Someya, T.;
Arakawa, Y.

Publication type:

Article

Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 537, doi. 10.1002/(SICI)1521-3951(199911)216:1<537::AID-PSSB537>3.0.CO;2-C

By:

Grzegory, I.;
Kozubowski, J.A.;
Borysiuk, J.;
Weyher, J.L.;
Boćkowski, M.;
Łucznik, B.;
Porowski, S.

Publication type:

Article

Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 577, doi. 10.1002/(SICI)1521-3951(199911)216:1<577::AID-PSSB577>3.0.CO;2-X

By:

Feng, Z.C.;
Hou, Y.T.;
Li, M.F.;
Chua, S.J.;
Wang, W.;
Zhu, L.

Publication type:

Article

Direct Observation of Pyroelectric Fields in InGaN/GaN and AlGaN/GaN Heterostructures.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 405, doi. 10.1002/(SICI)1521-3951(199911)216:1<405::AID-PSSB405>3.0.CO;2-#

By:

Gfrörer, O.;
Gemmer, C.;
Off, J.;
Im, J.S.;
Scholz, F.;
Hangleiter, A.

Publication type:

Article

Influence of Barrier Doping and Barrier Composition on Optical Gain in (In, Ga)N MQWs.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 331, doi. 10.1002/(SICI)1521-3951(199911)216:1<331::AID-PSSB331>3.0.CO;2-7

By:

Vehse, M.;
Michler, P.;
Gutowski, J.;
Figge, S.;
Hommel, S.;
Selke, H.;
Ryder, P.L.;
Keller, S.;
DenBaars, S.P.

Publication type:

Article

Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 445, doi. 10.1002/(SICI)1521-3951(199911)216:1<445::AID-PSSB445>3.0.CO;2-K

By:

Pozina, G.;
Bergman, J.P.;
Monemar, B.;
Mamutin, V.V.;
Shubina, T.V.;
Vekshin, V.A.;
Toropov, A.A.;
Ivanov, S.V.;
Karlsteen, M.;
Willander, M.

Publication type:

Article

Confined Excitons in GaN-AlGaN Quantum Wells.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 371, doi. 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO;2-S

By:

Bigenwald, P.;
Lefebvre, P.;
Bretagnon, T.;
GilBigenwald, B.

Publication type:

Article

Optical Selection Rules for Hexagonal GaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 599, doi. 10.1002/(SICI)1521-3951(199911)216:1<599::AID-PSSB599>3.0.CO;2-H

By:

Tronc, P.;
Kitaev, Yu.E.;
Wang, G.;
Limonov, M.F.;
Panfilov, A.G.;
Neu, G.

Publication type:

Article

Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 427, doi. 10.1002/(SICI)1521-3951(199911)216:1<427::AID-PSSB427>3.0.CO;2-K

By:

Hangleiter, A.;
Im, J.S.;
Off, J.;
Scholz, F.

Publication type:

Article

Photoreflectance Spectroscopy Investigation of GaN-AlGaN Quantum Well Structures.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 221, doi. 10.1002/(SICI)1521-3951(199911)216:1<221::AID-PSSB221>3.0.CO;2-F

By:

Ochalski, T.J.;
Gil, B.;
Bretagnon, T.;
Lefebvre, P.;
Grandjean, N.;
Massies, J.;
Leroux, M.

Publication type:

Article

Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 409, doi. 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.0.CO;2-K

By:

Albrecht, M.;
Cremades, A.;
Krinke, J.;
Christiansen, S.;
Ambacher, O.;
Piqueras, J.;
Strunk, H.P.;
Stutzmann, M.

Publication type:

Article

Spectral Study of Photoluminescence from GaInN/GaN MQWs Using CW and Time-Resolved Measurements.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 335, doi. 10.1002/(SICI)1521-3951(199911)216:1<335::AID-PSSB335>3.0.CO;2-S

By:

Watanabe, S.;
Yamada, N.;
Yamada, Y.;
Taguchi, T.;
Takeuchi, T.;
Amano, H.;
Akasaki, I.

Publication type:

Article

Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 375, doi. 10.1002/(SICI)1521-3951(199911)216:1<375::AID-PSSB375>3.0.CO;2-C

By:

Norman, C.E.;
Hoog, R.A.;
Shields, A.J.;
Iizuka, N.

Publication type:

Article

Extended X-Ray Absorption Fine Structure (EXAFS) of InN and InGaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 151, doi. 10.1002/(SICI)1521-3951(199911)216:1<151::AID-PSSB151>3.0.CO;2-7

By:

O'Donnell, K.P.;
Martin, R.W.;
White, M.E.;
Mosselmans, J.F.W.;
Guo, Qixin

Publication type:

Article

Determination of Optical Constants for Cubic InxGa1-xN Layers.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 265, doi. 10.1002/(SICI)1521-3951(199911)216:1<265::AID-PSSB265>3.0.CO;2-K

By:

Goldhahn, R.;
Scheiner, J.;
Shokhovets, S.;
Frey, T.;
Köhler, U.;
As, D.J.;
Lischka, K.

Publication type:

Article

Optical Study of Cubic Gallium Nitride Band-Edge and Relation with Residual Strain.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 247, doi. 10.1002/(SICI)1521-3951(199911)216:1<247::AID-PSSB247>3.0.CO;2-K

By:

Philippe, A.;
Bru-Chevallier, C.;
Gamez-Cuatzin, H.;
Guillot, G.;
Martinez-Guerrero, E.;
Feuillet, G.;
Daudin, B.;
Aboughé-Nzé, P.;
Monteil, Y.

Publication type:

Article

Comparison of Optical Properties between GaN and InGaN Quantum Wells.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 287, doi. 10.1002/(SICI)1521-3951(199911)216:1<287::AID-PSSB287>3.0.CO;2-4

By:

Riblet, P.;
Hirayama, H.;
Kinoshita, A.;
Hirata, A.;
Sugano, T.;
Aoyagi, Y.

Publication type:

Article

Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 269, doi. 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4

By:

Keller, S.;
Fleischer, S.B.;
Chichibu, S.F.;
Bowers, J.E.;
Mishra, U.K.;
DenBaars, S.P.

Publication type:

Article

Inhomogeneous Broadening of Excitons in Thin Films of GaN: Effect on the Time-Resolved Transmission Spectra.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 31, doi. 10.1002/(SICI)1521-3951(199911)216:1<31::AID-PSSB31>3.0.CO;2-Q

By:

Kavokin, A.V.;
Malpuech, G.;
Panzarini, G.

Publication type:

Article

Optical Constants of AlxGa1-xN: Modeling over a Wide Spectral Range.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 199, doi. 10.1002/(SICI)1521-3951(199911)216:1<199::AID-PSSB199>3.0.CO;2-X

By:

Djurišić, A.B.;
Li, E.H.

Publication type:

Article

Hot Electron Dynamics in Zincblende and Wurtzite GaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 35, doi. 10.1002/(SICI)1521-3951(199911)216:1<35::AID-PSSB35>3.0.CO;2-2

By:

Rodrigues, C.G.;
Freire, V.N.;
da Costa, J.A.P.;
Vasconcellos, A.R.;
Luzzi, R.

Publication type:

Article

Morphological and Optical Characterization of GaN/AlN Heterostructures Grown on Si(111) Substrates by MBE.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 701, doi. 10.1002/(SICI)1521-3951(199911)216:1<701::AID-PSSB701>3.0.CO;2-3

By:

Rinaldi, R.;
Antonaci, S.;
Anni, M.;
Lomascolo, M.;
Cingolani, R.;
Botchkarev, A.;
Morkoc, H.

Publication type:

Article

Magneto-Reflectivity of Gallium Nitride Epilayers.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 17, doi. 10.1002/(SICI)1521-3951(199911)216:1<17::AID-PSSB17>3.0.CO;2-V

By:

Shields, P.A.;
Nicholas, R.J.;
Beaumont, B.;
Gibart, P.

Publication type:

Article

Femtosecond Exciton Dynamics and the Mott Transition in GaN under Resonant Excitation.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 57, doi. 10.1002/(SICI)1521-3951(199911)216:1<57::AID-PSSB57>3.0.CO;2-N

By:

Hess, S.;
Taylor, R.A.;
Kyhm, K.;
Ryan, J.F.;
Beaumont, B.;
Gibart, P.

Publication type:

Article

Near-Band Gap Selective Photoluminescence in Wurtzite GaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 79, doi. 10.1002/(SICI)1521-3951(199911)216:1<79::AID-PSSB79>3.0.CO;2-7

By:

Neu, G.;
Teisseire, M.;
Beaumont, B.;
Lahreche, H.;
Gibart, P.

Publication type:

Article

Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 785, doi. 10.1002/(SICI)1521-3951(199911)216:1<785::AID-PSSB785>3.0.CO;2-T

By:

Harima, H.;
Kurimoto, E.;
Sone, Y.;
Nakashima, S.;
Chu, S.;
Ishida, A.;
Fujiyasu, H.

Publication type:

Article

Enhanced Two-Dimensional Electron Gas Confinement Effect on Transport Properties in AlGaN/InGaN/AlGaN Double-Heterostructures.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 727, doi. 10.1002/(SICI)1521-3951(199911)216:1<727::AID-PSSB727>3.0.CO;2-8

By:

Maeda, N.;
Saitoh, T.;
Tsubaki, K.;
Nishida, T.;
Kobayashi, N.

Publication type:

Article

Pressure Studies of Defects and Impurities in Nitrides.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 521, doi. 10.1002/(SICI)1521-3951(199911)216:1<521::AID-PSSB521>3.0.CO;2-3

By:

Suski, T.;
Perlin, P.;
Skierbiszewski, C.;
Wisniewski, P.;
Dmowski, L.;
Leszczynski, M.;
Walukiewicz, W.

Publication type:

Article

Electrical Properties of the Si Implantation in Mg Doped p-GaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 561, doi. 10.1002/(SICI)1521-3951(199911)216:1<561::AID-PSSB561>3.0.CO;2-O

By:

Lai, Wei-Chih;
Yokoyama, M.;
Tsai, Chiung-Chi;
Chang, Chen-Shiung;
Guo, Jan-Dar;
Tsang, Jian-Shih;
Chan, Shih-Hsiung

Publication type:

Article

Photoconductivity in AlxGa1-xN with Different Al Contents.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 749, doi. 10.1002/(SICI)1521-3951(199911)216:1<749::AID-PSSB749>3.0.CO;2-T

By:

Meister, D.;
Topf, M.;
Dirnstorfer, I.;
Meyer, B.K.;
schwarz, R.;
Heuken, M.

Publication type:

Article

Surface Energies and Surface Dipoles at III-Nitride(111) Surfaces in Dependence on Stoichiometry.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 675, doi. 10.1002/(SICI)1521-3951(199911)216:1<675::AID-PSSB675>3.0.CO;2-0

By:

Grossner, U.;
Furthmüller, J.;
Bechstedt, F.

Publication type:

Article

Local Vibrational Modes in p-Type GaN Observed by Raman Scattering.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 789, doi. 10.1002/(SICI)1521-3951(199911)216:1<789::AID-PSSB789>3.0.CO;2-D

By:

Harima, H.;
Inoue, T.;
Sone, Y.;
Nakashima, S.;
Ishida, M.;
Taneya, M.

Publication type:

Article

A TEM Evaluation of ELOG GaN Grown on AlN Buffer Layer by HVPE on (0001) 6H-SiC.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 697, doi. 10.1002/(SICI)1521-3951(199911)216:1<697::AID-PSSB697>3.0.CO;2-L

By:

Ruterana, P.;
Beaumont, B.;
Gibart, P.;
Melnik, Yu.

Publication type:

Article

Violet to Orange Room Temperature Luminescence from GaN Quantum Dots on Si(111) Substrates.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 451, doi. 10.1002/(SICI)1521-3951(199911)216:1<451::AID-PSSB451>3.0.CO;2-W

By:

Damilano, B.;
Grandjean, N.;
Semond, F.;
Massies, J.;
Leroux, M.

Publication type:

Article

Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates - The Dependence on Dislocation Density and Structure.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 639, doi. 10.1002/(SICI)1521-3951(199911)216:1<639::AID-PSSB639>3.0.CO;2-0

By:

Hacke, P.;
Kuramata, A.;
Domen, K.;
Horino, K.;
Tanahashi, T.

Publication type:

Article

High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 491, doi. 10.1002/(SICI)1521-3951(199911)216:1<491::AID-PSSB491>3.0.CO;2-G

By:

Marko, I.P.;
Lutsenko, E.V.;
Pavlovskii, V.N.;
Yablonskii, G.P.;
Schön, O.;
Protzmann, H.;
Lünenbürger, M.;
Heuken, M.;
Schneller, B.;
Heime, K.

Publication type:

Article

Composition Analysis Using Elastic Recoil Detection.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 679, doi. 10.1002/(SICI)1521-3951(199911)216:1<679::AID-PSSB679>3.0.CO;2-L

By:

Görgens, L.;
Dollinger, G.;
Bergmaier, A.;
Ambacher, O.;
Eastman, L.;
Smart, J.A.;
Shealy, J.F.;
Dimitrov, R.;
Stutzmann, M.;
Mitchell, A.

Publication type:

Article

The Origin of Red Luminescence from Mg-Doped GaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 547, doi. 10.1002/(SICI)1521-3951(199911)216:1<547::AID-PSSB547>3.0.CO;2-8

By:

Bayerl, M.W.;
Brandt, M.S.;
Glaser, E.R.;
Wickenden, A.E.;
Koleske, D.D.;
Henry, R.L.;
Stutzmann, M.

Publication type:

Article