Works matching IS 03701972 AND DT 1999 AND VI 216 AND IP 1

Results: 152

Strain Distribution in GaN Hexagons Measured by Raman Spectroscopy.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 775, doi. 10.1002/(SICI)1521-3951(199911)216:1<775::AID-PSSB775>3.0.CO;2-X
By:
- Seitz, R.;
- Monteiro, T.;
- Pereira, E.;
- di Forte-Poisson, M.
Publication type:
Article
Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 683, doi. 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4
By:
- Amano, H.;
- Iwaya, M.;
- Hayashi, N.;
- Kashima, T.;
- Nitta, S.;
- Wetzel, C.;
- Akasaki, I.
Publication type:
Article
Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 511, doi. 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7
By:
- Krestnikov, I.L.;
- Lundin, W.V.;
- Sakharov, A.V.;
- Semenov, V.A.;
- Usikov, A.S.;
- Tsatsulnikov, A.F.;
- Alferov, Zh.I.;
- Ledentsov, N.N.;
- Hoffmann, A.;
- Bimberg, D.
Publication type:
Article
Green Emission from Tb-Doped GaN Grown by MOVPE.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 625, doi. 10.1002/(SICI)1521-3951(199911)216:1<625::AID-PSSB625>3.0.CO;2-K
By:
- Hara, K.;
- Ohtake, N.;
- Ishii, K.
Publication type:
Article
Defect Complexes in Highly Mg-Doped GaN Studied by Raman Spectroscopy.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 551, doi. 10.1002/(SICI)1521-3951(199911)216:1<551::AID-PSSB551>3.0.CO;2-S
By:
- Kaschner, A.;
- Kaczmarczyk, G.;
- Hoffmann, A.;
- Thomsen, C.;
- Birkle, U.;
- Einfeldt, S.;
- Hommel, D.
Publication type:
Article
Phonons in Hexagonal InN. Experiment and Theory.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 779, doi. 10.1002/(SICI)1521-3951(199911)216:1<779::AID-PSSB779>3.0.CO;2-H
By:
- Davydov, V.Yu.;
- Klochikhin, A.A.;
- Smirnov, M.B.;
- Emtsev, V.V.;
- Petrikov, V.D.;
- Abroyan, I.A.;
- Titov, A.I.;
- Goncharuk, I.N.;
- Smirnov, A.N.;
- Mamutin, V.V.;
- Ivanov, S.V.;
- Inushima, T.
Publication type:
Article
Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 533, doi. 10.1002/(SICI)1521-3951(199911)216:1<533::AID-PSSB533>3.0.CO;2-S
By:
- Shmidt, N.M.;
- Davydov, D.V.;
- Emtsev, V.V.;
- Krestnikov, I.L.;
- Lebedev, A.A.;
- Lundin, W.V.;
- Poloskin, D.S.;
- Sakharov, A.V.;
- Usikov, A.S.;
- Osinsky, A.V.
Publication type:
Article
Calculation of Optical Transition Energies for Self-Formed InGaN Quantum Dots.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 441, doi. 10.1002/(SICI)1521-3951(199911)216:1<441::AID-PSSB441>3.0.CO;2-#
By:
- Martin, R.W.;
- O'Donnell, K.P.
Publication type:
Article
Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric Spectroscopy.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 629, doi. 10.1002/(SICI)1521-3951(199911)216:1<629::AID-PSSB629>3.0.CO;2-4
By:
- Maruyama, T.;
- Sasaki, H.;
- Morishima, S.;
- Akimoto, K.
Publication type:
Article
Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 481, doi. 10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K
By:
- Bigenwald, P.;
- Kavokin, A.;
- Christol, P.;
- Gil, B.;
- Lefebvre, P.
Publication type:
Article
Photoluminescence Characterisation of Triangular Lattices of Holes and Pillars Etched in GaN Epilayers.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 669, doi. 10.1002/(SICI)1521-3951(199911)216:1<669::AID-PSSB669>3.0.CO;2-P
By:
- Coquillat, D.;
- Ribayrol, A.;
- De La Rue, R.M.;
- Girard, P.;
- Briot, O.;
- Aulombard, R.L.;
- Cassagne, D.;
- Jouanin, C.
Publication type:
Article
High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 5, doi. 10.1002/(SICI)1521-3951(199911)216:1<5::AID-PSSB5>3.0.CO;2-F
By:
- Kornitzer, K.;
- Ebner, T.;
- Grehl, M.;
- Thonke, K.;
- Sauer, R.;
- Kirchner, C.;
- Schwegler, V.;
- Kamp, M.;
- Leszczynski, M.;
- Grzegory, I.;
- Porowski, S.
Publication type:
Article
Screening of the Polarization Field in InGaN Single Quantum Wells.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 423, doi. 10.1002/(SICI)1521-3951(199911)216:1<423::AID-PSSB423>3.0.CO;2-#
By:
- Harris, J.C.;
- Kako, S.;
- Someya, T.;
- Arakawa, Y.
Publication type:
Article
Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 537, doi. 10.1002/(SICI)1521-3951(199911)216:1<537::AID-PSSB537>3.0.CO;2-C
By:
- Grzegory, I.;
- Kozubowski, J.A.;
- Borysiuk, J.;
- Weyher, J.L.;
- Boćkowski, M.;
- Łucznik, B.;
- Porowski, S.
Publication type:
Article
Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 577, doi. 10.1002/(SICI)1521-3951(199911)216:1<577::AID-PSSB577>3.0.CO;2-X
By:
- Feng, Z.C.;
- Hou, Y.T.;
- Li, M.F.;
- Chua, S.J.;
- Wang, W.;
- Zhu, L.
Publication type:
Article
Direct Observation of Pyroelectric Fields in InGaN/GaN and AlGaN/GaN Heterostructures.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 405, doi. 10.1002/(SICI)1521-3951(199911)216:1<405::AID-PSSB405>3.0.CO;2-#
By:
- Gfrörer, O.;
- Gemmer, C.;
- Off, J.;
- Im, J.S.;
- Scholz, F.;
- Hangleiter, A.
Publication type:
Article
Influence of Barrier Doping and Barrier Composition on Optical Gain in (In, Ga)N MQWs.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 331, doi. 10.1002/(SICI)1521-3951(199911)216:1<331::AID-PSSB331>3.0.CO;2-7
By:
- Vehse, M.;
- Michler, P.;
- Gutowski, J.;
- Figge, S.;
- Hommel, S.;
- Selke, H.;
- Ryder, P.L.;
- Keller, S.;
- DenBaars, S.P.
Publication type:
Article
Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 445, doi. 10.1002/(SICI)1521-3951(199911)216:1<445::AID-PSSB445>3.0.CO;2-K
By:
- Pozina, G.;
- Bergman, J.P.;
- Monemar, B.;
- Mamutin, V.V.;
- Shubina, T.V.;
- Vekshin, V.A.;
- Toropov, A.A.;
- Ivanov, S.V.;
- Karlsteen, M.;
- Willander, M.
Publication type:
Article
Confined Excitons in GaN-AlGaN Quantum Wells.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 371, doi. 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO;2-S
By:
- Bigenwald, P.;
- Lefebvre, P.;
- Bretagnon, T.;
- GilBigenwald, B.
Publication type:
Article
Optical Selection Rules for Hexagonal GaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 599, doi. 10.1002/(SICI)1521-3951(199911)216:1<599::AID-PSSB599>3.0.CO;2-H
By:
- Tronc, P.;
- Kitaev, Yu.E.;
- Wang, G.;
- Limonov, M.F.;
- Panfilov, A.G.;
- Neu, G.
Publication type:
Article
Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 427, doi. 10.1002/(SICI)1521-3951(199911)216:1<427::AID-PSSB427>3.0.CO;2-K
By:
- Hangleiter, A.;
- Im, J.S.;
- Off, J.;
- Scholz, F.
Publication type:
Article
Photoreflectance Spectroscopy Investigation of GaN-AlGaN Quantum Well Structures.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 221, doi. 10.1002/(SICI)1521-3951(199911)216:1<221::AID-PSSB221>3.0.CO;2-F
By:
- Ochalski, T.J.;
- Gil, B.;
- Bretagnon, T.;
- Lefebvre, P.;
- Grandjean, N.;
- Massies, J.;
- Leroux, M.
Publication type:
Article
Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 409, doi. 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.0.CO;2-K
By:
- Albrecht, M.;
- Cremades, A.;
- Krinke, J.;
- Christiansen, S.;
- Ambacher, O.;
- Piqueras, J.;
- Strunk, H.P.;
- Stutzmann, M.
Publication type:
Article
Spectral Study of Photoluminescence from GaInN/GaN MQWs Using CW and Time-Resolved Measurements.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 335, doi. 10.1002/(SICI)1521-3951(199911)216:1<335::AID-PSSB335>3.0.CO;2-S
By:
- Watanabe, S.;
- Yamada, N.;
- Yamada, Y.;
- Taguchi, T.;
- Takeuchi, T.;
- Amano, H.;
- Akasaki, I.
Publication type:
Article
Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 375, doi. 10.1002/(SICI)1521-3951(199911)216:1<375::AID-PSSB375>3.0.CO;2-C
By:
- Norman, C.E.;
- Hoog, R.A.;
- Shields, A.J.;
- Iizuka, N.
Publication type:
Article
Extended X-Ray Absorption Fine Structure (EXAFS) of InN and InGaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 151, doi. 10.1002/(SICI)1521-3951(199911)216:1<151::AID-PSSB151>3.0.CO;2-7
By:
- O'Donnell, K.P.;
- Martin, R.W.;
- White, M.E.;
- Mosselmans, J.F.W.;
- Guo, Qixin
Publication type:
Article
Determination of Optical Constants for Cubic InxGa1-xN Layers.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 265, doi. 10.1002/(SICI)1521-3951(199911)216:1<265::AID-PSSB265>3.0.CO;2-K
By:
- Goldhahn, R.;
- Scheiner, J.;
- Shokhovets, S.;
- Frey, T.;
- Köhler, U.;
- As, D.J.;
- Lischka, K.
Publication type:
Article
Optical Study of Cubic Gallium Nitride Band-Edge and Relation with Residual Strain.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 247, doi. 10.1002/(SICI)1521-3951(199911)216:1<247::AID-PSSB247>3.0.CO;2-K
By:
- Philippe, A.;
- Bru-Chevallier, C.;
- Gamez-Cuatzin, H.;
- Guillot, G.;
- Martinez-Guerrero, E.;
- Feuillet, G.;
- Daudin, B.;
- Aboughé-Nzé, P.;
- Monteil, Y.
Publication type:
Article
Comparison of Optical Properties between GaN and InGaN Quantum Wells.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 287, doi. 10.1002/(SICI)1521-3951(199911)216:1<287::AID-PSSB287>3.0.CO;2-4
By:
- Riblet, P.;
- Hirayama, H.;
- Kinoshita, A.;
- Hirata, A.;
- Sugano, T.;
- Aoyagi, Y.
Publication type:
Article
Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 269, doi. 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4
By:
- Keller, S.;
- Fleischer, S.B.;
- Chichibu, S.F.;
- Bowers, J.E.;
- Mishra, U.K.;
- DenBaars, S.P.
Publication type:
Article
Inhomogeneous Broadening of Excitons in Thin Films of GaN: Effect on the Time-Resolved Transmission Spectra.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 31, doi. 10.1002/(SICI)1521-3951(199911)216:1<31::AID-PSSB31>3.0.CO;2-Q
By:
- Kavokin, A.V.;
- Malpuech, G.;
- Panzarini, G.
Publication type:
Article
Optical Constants of AlxGa1-xN: Modeling over a Wide Spectral Range.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 199, doi. 10.1002/(SICI)1521-3951(199911)216:1<199::AID-PSSB199>3.0.CO;2-X
By:
- Djurišić, A.B.;
- Li, E.H.
Publication type:
Article
Hot Electron Dynamics in Zincblende and Wurtzite GaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 35, doi. 10.1002/(SICI)1521-3951(199911)216:1<35::AID-PSSB35>3.0.CO;2-2
By:
- Rodrigues, C.G.;
- Freire, V.N.;
- da Costa, J.A.P.;
- Vasconcellos, A.R.;
- Luzzi, R.
Publication type:
Article
Morphological and Optical Characterization of GaN/AlN Heterostructures Grown on Si(111) Substrates by MBE.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 701, doi. 10.1002/(SICI)1521-3951(199911)216:1<701::AID-PSSB701>3.0.CO;2-3
By:
- Rinaldi, R.;
- Antonaci, S.;
- Anni, M.;
- Lomascolo, M.;
- Cingolani, R.;
- Botchkarev, A.;
- Morkoc, H.
Publication type:
Article
Magneto-Reflectivity of Gallium Nitride Epilayers.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 17, doi. 10.1002/(SICI)1521-3951(199911)216:1<17::AID-PSSB17>3.0.CO;2-V
By:
- Shields, P.A.;
- Nicholas, R.J.;
- Beaumont, B.;
- Gibart, P.
Publication type:
Article
Femtosecond Exciton Dynamics and the Mott Transition in GaN under Resonant Excitation.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 57, doi. 10.1002/(SICI)1521-3951(199911)216:1<57::AID-PSSB57>3.0.CO;2-N
By:
- Hess, S.;
- Taylor, R.A.;
- Kyhm, K.;
- Ryan, J.F.;
- Beaumont, B.;
- Gibart, P.
Publication type:
Article
Near-Band Gap Selective Photoluminescence in Wurtzite GaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 79, doi. 10.1002/(SICI)1521-3951(199911)216:1<79::AID-PSSB79>3.0.CO;2-7
By:
- Neu, G.;
- Teisseire, M.;
- Beaumont, B.;
- Lahreche, H.;
- Gibart, P.
Publication type:
Article
Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 785, doi. 10.1002/(SICI)1521-3951(199911)216:1<785::AID-PSSB785>3.0.CO;2-T
By:
- Harima, H.;
- Kurimoto, E.;
- Sone, Y.;
- Nakashima, S.;
- Chu, S.;
- Ishida, A.;
- Fujiyasu, H.
Publication type:
Article
Enhanced Two-Dimensional Electron Gas Confinement Effect on Transport Properties in AlGaN/InGaN/AlGaN Double-Heterostructures.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 727, doi. 10.1002/(SICI)1521-3951(199911)216:1<727::AID-PSSB727>3.0.CO;2-8
By:
- Maeda, N.;
- Saitoh, T.;
- Tsubaki, K.;
- Nishida, T.;
- Kobayashi, N.
Publication type:
Article
Pressure Studies of Defects and Impurities in Nitrides.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 521, doi. 10.1002/(SICI)1521-3951(199911)216:1<521::AID-PSSB521>3.0.CO;2-3
By:
- Suski, T.;
- Perlin, P.;
- Skierbiszewski, C.;
- Wisniewski, P.;
- Dmowski, L.;
- Leszczynski, M.;
- Walukiewicz, W.
Publication type:
Article
Electrical Properties of the Si Implantation in Mg Doped p-GaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 561, doi. 10.1002/(SICI)1521-3951(199911)216:1<561::AID-PSSB561>3.0.CO;2-O
By:
- Lai, Wei-Chih;
- Yokoyama, M.;
- Tsai, Chiung-Chi;
- Chang, Chen-Shiung;
- Guo, Jan-Dar;
- Tsang, Jian-Shih;
- Chan, Shih-Hsiung
Publication type:
Article
Photoconductivity in AlxGa1-xN with Different Al Contents.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 749, doi. 10.1002/(SICI)1521-3951(199911)216:1<749::AID-PSSB749>3.0.CO;2-T
By:
- Meister, D.;
- Topf, M.;
- Dirnstorfer, I.;
- Meyer, B.K.;
- schwarz, R.;
- Heuken, M.
Publication type:
Article
Surface Energies and Surface Dipoles at III-Nitride(111) Surfaces in Dependence on Stoichiometry.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 675, doi. 10.1002/(SICI)1521-3951(199911)216:1<675::AID-PSSB675>3.0.CO;2-0
By:
- Grossner, U.;
- Furthmüller, J.;
- Bechstedt, F.
Publication type:
Article
Local Vibrational Modes in p-Type GaN Observed by Raman Scattering.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 789, doi. 10.1002/(SICI)1521-3951(199911)216:1<789::AID-PSSB789>3.0.CO;2-D
By:
- Harima, H.;
- Inoue, T.;
- Sone, Y.;
- Nakashima, S.;
- Ishida, M.;
- Taneya, M.
Publication type:
Article
A TEM Evaluation of ELOG GaN Grown on AlN Buffer Layer by HVPE on (0001) 6H-SiC.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 697, doi. 10.1002/(SICI)1521-3951(199911)216:1<697::AID-PSSB697>3.0.CO;2-L
By:
- Ruterana, P.;
- Beaumont, B.;
- Gibart, P.;
- Melnik, Yu.
Publication type:
Article
Violet to Orange Room Temperature Luminescence from GaN Quantum Dots on Si(111) Substrates.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 451, doi. 10.1002/(SICI)1521-3951(199911)216:1<451::AID-PSSB451>3.0.CO;2-W
By:
- Damilano, B.;
- Grandjean, N.;
- Semond, F.;
- Massies, J.;
- Leroux, M.
Publication type:
Article
Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates - The Dependence on Dislocation Density and Structure.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 639, doi. 10.1002/(SICI)1521-3951(199911)216:1<639::AID-PSSB639>3.0.CO;2-0
By:
- Hacke, P.;
- Kuramata, A.;
- Domen, K.;
- Horino, K.;
- Tanahashi, T.
Publication type:
Article
High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 491, doi. 10.1002/(SICI)1521-3951(199911)216:1<491::AID-PSSB491>3.0.CO;2-G
By:
- Marko, I.P.;
- Lutsenko, E.V.;
- Pavlovskii, V.N.;
- Yablonskii, G.P.;
- Schön, O.;
- Protzmann, H.;
- Lünenbürger, M.;
- Heuken, M.;
- Schneller, B.;
- Heime, K.
Publication type:
Article
Composition Analysis Using Elastic Recoil Detection.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 679, doi. 10.1002/(SICI)1521-3951(199911)216:1<679::AID-PSSB679>3.0.CO;2-L
By:
- Görgens, L.;
- Dollinger, G.;
- Bergmaier, A.;
- Ambacher, O.;
- Eastman, L.;
- Smart, J.A.;
- Shealy, J.F.;
- Dimitrov, R.;
- Stutzmann, M.;
- Mitchell, A.
Publication type:
Article
The Origin of Red Luminescence from Mg-Doped GaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 547, doi. 10.1002/(SICI)1521-3951(199911)216:1<547::AID-PSSB547>3.0.CO;2-8
By:
- Bayerl, M.W.;
- Brandt, M.S.;
- Glaser, E.R.;
- Wickenden, A.E.;
- Koleske, D.D.;
- Henry, R.L.;
- Stutzmann, M.
Publication type:
Article