Works matching IS 03701972 AND DT 1999 AND VI 211 AND IP 1
Results: 85
Pitfalls of Using Pressure to Assign the Luminescence of Large-Lattice-Relaxation Defects.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 91, doi. 10.1002/(SICI)1521-3951(199901)211:1<91::AID-PSSB91>3.0.CO;2-M
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Direct to Indirect Crossover in III-VI Layered Compounds and Alloys under Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 33, doi. 10.1002/(SICI)1521-3951(199901)211:1<33::AID-PSSB33>3.0.CO;2-M
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Excited States in Self-Assembled InAs/GaAs Quantum Dots under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 73, doi. 10.1002/(SICI)1521-3951(199901)211:1<73::AID-PSSB73>3.0.CO;2-E
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Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 533, doi. 10.1002/(SICI)1521-3951(199901)211:1<533::AID-PSSB533>3.0.CO;2-#
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Non-Traditional Carbon Semiconductors Prepared from Fullerite C<sub>60</sub> and Carbyne under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 401, doi. 10.1002/(SICI)1521-3951(199901)211:1<401::AID-PSSB401>3.0.CO;2-N
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Physics of GaAs-AlAs Superlattices under Pressure - Application to Sensors.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 481, doi. 10.1002/(SICI)1521-3951(199901)211:1<481::AID-PSSB481>3.0.CO;2-S
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Pressure Effect Inducing a Larger 1D Character in High Index (311)A Oriented Quantum Wells.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 519, doi. 10.1002/(SICI)1521-3951(199901)211:1<519::AID-PSSB519>3.0.CO;2-K
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Magnetotransport of (Cd<sub>1-x-y</sub>Zn<sub>x</sub>Mn<sub>y</sub>)<sub>3</sub>As<sub>2</sub> under Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 559, doi. 10.1002/(SICI)1521-3951(199901)211:1<559::AID-PSSB559>3.0.CO;2-4
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High Pressure Measurements and the 'Universal' Scaling of Impact Ionization with Bandstructure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 335, doi. 10.1002/(SICI)1521-3951(199901)211:1<335::AID-PSSB335>3.0.CO;2-#
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Evidence of Weak Localization in a Two-Dimensional Electron Gas from Studies of Pressure-Induced Semimetal-Semiconductor-Insulator Transitions in GaSb/InAs/GaSb Quantum Wells.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 449, doi. 10.1002/(SICI)1521-3951(199901)211:1<449::AID-PSSB449>3.0.CO;2-C
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Enhancement of 2D → 2D Tunneling by Γ-X<sub>Z</sub> Mixing in GaAs/AlAs Resonant Tunneling Structures at High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 489, doi. 10.1002/(SICI)1521-3951(199901)211:1<489::AID-PSSB489>3.0.CO;2-X
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Structural Phase Transition of CdS Microcrystals under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 317, doi. 10.1002/(SICI)1521-3951(199901)211:1<317::AID-PSSB317>3.0.CO;2-#
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Energy Transfer between Mn Ions in Semimagnetic Semiconductors.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 111, doi. 10.1002/(SICI)1521-3951(199901)211:1<111::AID-PSSB111>3.0.CO;2-V
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Metallization of Monocrystalline Silicon under Shock Compression.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 379, doi. 10.1002/(SICI)1521-3951(199901)211:1<379::AID-PSSB379>3.0.CO;2-4
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High-Pressure Effects in Low-Temperature Fundamental Optical Absorption and Photoluminescence of Glassy Semiconductors.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 207, doi. 10.1002/(SICI)1521-3951(199901)211:1<207::AID-PSSB207>3.0.CO;2-7
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Time-Resolved Photoluminescence Study of GaAs/Ordered GaInP Interface under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 247, doi. 10.1002/(SICI)1521-3951(199901)211:1<247::AID-PSSB247>3.0.CO;2-S
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Raman Scattering in CuCl under Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 287, doi. 10.1002/(SICI)1521-3951(199901)211:1<287::AID-PSSB287>3.0.CO;2-C
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Stress Induced Exciton Mixing in Quantum Wells.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 269, doi. 10.1002/(SICI)1521-3951(199901)211:1<269::AID-PSSB269>3.0.CO;2-C
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Breakdown of Donor Localized States on the Insulating Side of Strain-Induced MI Transitions in Si and Ge.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 137, doi. 10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-#
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Optical Properties of Poly(Para-Phenylenes) under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 177, doi. 10.1002/(SICI)1521-3951(199901)211:1<177::AID-PSSB177>3.0.CO;2-K
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Gadolinium Submonolayers on (112) Surfaces of W and Mo: A LEELS Study.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. R1, doi. 10.1002/(SICI)1521-3951(199901)211:1<R1::AID-PSSB99991>3.0.CO;2-2
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Dependence of Threshold Current on QW Position and on Pressure in 1.5 μm InGaAs(P) Lasers.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 525, doi. 10.1002/(SICI)1521-3951(199901)211:1<525::AID-PSSB525>3.0.CO;2-W
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Electrical Properties of InGaP:Si and AlGaAs:Sn Epitaxial Layers.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 565, doi. 10.1002/(SICI)1521-3951(199901)211:1<565::AID-PSSB565>3.0.CO;2-G
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Stress Induced Anisotropy of Fermi Surface in p-GaAs/AlGaAs Quantum Wells.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 507, doi. 10.1002/(SICI)1521-3951(199901)211:1<507::AID-PSSB507>3.0.CO;2-W
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Calculated Critical Energies E<sub>1</sub> and E<sub>1</sub> + Δ<sub>1</sub> for Strained Group IV Elements and III-V Compounds.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 29, doi. 10.1002/(SICI)1521-3951(199901)211:1<29::AID-PSSB29>3.0.CO;2-P
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Pressure Dependence of the Band Gap of 4H-SiC.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 69, doi. 10.1002/(SICI)1521-3951(199901)211:1<69::AID-PSSB69>3.0.CO;2-H
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High Pressure Raman Study of Lu 3Al<sub>5</sub>O<sub>12</sub>.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 301, doi. 10.1002/(SICI)1521-3951(199901)211:1<301::AID-PSSB301>3.0.CO;2-R
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High-Pressure Structural Study of CuAlS<sub>2</sub> and CuAlSe<sub>2</sub>.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 455, doi. 10.1002/(SICI)1521-3951(199901)211:1<455::AID-PSSB455>3.0.CO;2-O
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Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 495, doi. 10.1002/(SICI)1521-3951(199901)211:1<495::AID-PSSB495>3.0.CO;2-8
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X-Ray Absorption Spectroscopy Applied to Pressure-Induced Transformations of Semiconductors.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 323, doi. 10.1002/(SICI)1521-3951(199901)211:1<323::AID-PSSB323>3.0.CO;2-B
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High-Pressure Cinnabar-Like Phases in III-V Compounds.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 345, doi. 10.1002/(SICI)1521-3951(199901)211:1<345::AID-PSSB345>3.0.CO;2-W
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Structure of III<sub>a</sub>-ZnIn<sub>2</sub>S<sub>4</sub> under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 385, doi. 10.1002/(SICI)1521-3951(199901)211:1<385::AID-PSSB385>3.0.CO;2-G
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Study of Electronic and Optical Properties of Fullerene Nanotube under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 213, doi. 10.1002/(SICI)1521-3951(199901)211:1<213::AID-PSSB213>3.0.CO;2-J
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Raman Linewidths of Phonons in Si, Ge, and SiC under Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 293, doi. 10.1002/(SICI)1521-3951(199901)211:1<293::AID-PSSB293>3.0.CO;2-O
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Raman and RAS Measurements on Uniaxially Strained Thin Semiconductor Layers.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 309, doi. 10.1002/(SICI)1521-3951(199901)211:1<309::AID-PSSB309>3.0.CO;2-W
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Temperature and Dynamical Effects on the High-Pressure Cubic-Diamond ↔ β-Tin Phase Transition in Si and Ge.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 275, doi. 10.1002/(SICI)1521-3951(199901)211:1<275::AID-PSSB275>3.0.CO;2-O
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High Pressure EXAFS on GaTe Single Crystal Including Polarization.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 389, doi. 10.1002/(SICI)1521-3951(199901)211:1<389::AID-PSSB389>3.0.CO;2-0
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Localized and Extended Exciton States in Solid C<sub>60</sub> Studied by Photoluminescence at High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 217, doi. 10.1002/(SICI)1521-3951(199901)211:1<217::AID-PSSB217>3.0.CO;2-3
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Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 143, doi. 10.1002/(SICI)1521-3951(199901)211:1<143::AID-PSSB143>3.0.CO;2-B
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GaAs/(Ordered)GaInP<sub>2</sub> Heterostructures under Pressure and High Magnetic Fields.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 239, doi. 10.1002/(SICI)1521-3951(199901)211:1<239::AID-PSSB239>3.0.CO;2-O
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The Influence of Hydrostatic Pressure on the Electrical Conductivity and Hall Effect of CuInTe<sub>2</sub> Crystals.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 571, doi. 10.1002/(SICI)1521-3951(199901)211:1<571::AID-PSSB571>3.0.CO;2-S
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The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 μm InGaAsP Quantum Well Semiconductor Diode Lasers.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 513, doi. 10.1002/(SICI)1521-3951(199901)211:1<513::AID-PSSB513>3.0.CO;2-7
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Investigation of Magnetoresistance in Crystalline Semiconductors in the Metal-Insulator Transition Region under Hydrostatic Compression.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 553, doi. 10.1002/(SICI)1521-3951(199901)211:1<553::AID-PSSB553>3.0.CO;2-S
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Temperature and Pressure Dependence of Raman Scattering in Amorphous GeS<sub>2</sub>.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 421, doi. 10.1002/(SICI)1521-3951(199901)211:1<421::AID-PSSB421>3.0.CO;2-F
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High Pressure and Temperature X-Ray Diffraction Studies on CdTe.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 461, doi. 10.1002/(SICI)1521-3951(199901)211:1<461::AID-PSSB461>3.0.CO;2-#
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Comparability and Reliability of High-Pressure Band-Gap Data in Tetrahedral Semiconductors.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 17, doi. 10.1002/(SICI)1521-3951(199901)211:1<17::AID-PSSB17>3.0.CO;2-2
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High Pressure Luminescence of Zincblende and Wurtzite GaN.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 57, doi. 10.1002/(SICI)1521-3951(199901)211:1<57::AID-PSSB57>3.0.CO;2-V
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X-Ray Diffraction Study of Zn<sub>0.9</sub>Co<sub>0.1</sub>S under High Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 443, doi. 10.1002/(SICI)1521-3951(199901)211:1<443::AID-PSSB443>3.0.CO;2-#
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AlX (X = As, P, Sb) Compounds under Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 39, doi. 10.1002/(SICI)1521-3951(199901)211:1<39::AID-PSSB39>3.0.CO;2-N
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Pressure-Induced Γ-X Crossover in Self-Assembled In(Ga)As/GaAs Quantum Dots.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 79, doi. 10.1002/(SICI)1521-3951(199901)211:1<79::AID-PSSB79>3.0.CO;2-F
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