Works matching IS 03701972 AND DT 1998 AND VI 210 AND IP 2

Results: 107

Competition between Long-Living and D−(A+) States of Donors and Acceptors in Silicon.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 815, doi. 10.1002/(SICI)1521-3951(199812)210:2<815::AID-PSSB815>3.0.CO;2-L

By:

Pokrovskii, Ya.E.;
Altukhov, I.V.;
Smirnova, O.I.;
Khvalkovskii, N.A.

Publication type:

Article

The Effects of Quantum Confinement and Magnetic Fields on the Binding Energy of Hydrogenic Impurities in Low-Dimensional Systems.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 723, doi. 10.1002/(SICI)1521-3951(199812)210:2<723::AID-PSSB723>3.0.CO;2-T

By:

Vivas-Moreno, J.J.;
Porras-Montenegro, N.

Publication type:

Article

Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 631, doi. 10.1002/(SICI)1521-3951(199812)210:2<631::AID-PSSB631>3.0.CO;2-0

By:

Pawlak, B.J.;
Gregorkiewicz, T.;
Ammerlaan, C.A.J.

Publication type:

Article

Interaction of a Laser Field with a Semiconductor System: Application to Shallow-Impurity Levels of Quantum Wells.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 671, doi. 10.1002/(SICI)1521-3951(199812)210:2<671::AID-PSSB671>3.0.CO;2-L

By:

Brandi, H.S.;
Latgé, A.;
Oliveira, L.E.

Publication type:

Article

Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 859, doi. 10.1002/(SICI)1521-3951(199812)210:2<859::AID-PSSB859>3.0.CO;2-Q

By:

Orlova, E.E.;
Zhukavin, R.Ch.;
Pavlov, S.G.;
Shastin, V.N.

Publication type:

Article

Theoretical Calculations of Shallow Acceptor States in Strained Quantum Well Structures.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 693, doi. 10.1002/(SICI)1521-3951(199812)210:2<693::AID-PSSB693>3.0.CO;2-5

By:

Zhao, Q.X.;
Holtz, P.O.;
Willander, M.

Publication type:

Article

Magneto-Donors and Donor-Bound Excitons in GaAssol;Ga0.67Al0.33As Heterostructures in the Quantum Hall Regime.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 635, doi. 10.1002/(SICI)1521-3951(199812)210:2<635::AID-PSSB635>3.0.CO;2-L

By:

Couzinet, B.;
Raymond, A.;
Elmezouar, M.I.;
Zawadzki, W.;
Kubisa, M.;
Etienne, B.

Publication type:

Article

Infrared and Raman Spectroscopy of Acceptor-Bound Holes: Boron Acceptors in Isotopically Controlled 'Blue' Diamonds.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 451, doi. 10.1002/(SICI)1521-3951(199812)210:2<451::AID-PSSB451>3.0.CO;2-0

By:

Kim, Hyunjung;
Vogelgesang, R.;
Ramdas, A.K.;
Rodriguez, S.;
Grimsditch, M.;
Anthony, T.R.

Publication type:

Article

Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 491, doi. 10.1002/(SICI)1521-3951(199812)210:2<491::AID-PSSB491>3.0.CO;2-L

By:

Yoshino, K.;
Nakagawa, Y.;
Fukuyama, A.;
Yokoyama, H.;
Maeda, K.;
Ishikura, H.;
Abe, T.;
Ikari, T.

Publication type:

Article

Optical Absorption Study of the Interaction between Group II Acceptors and Hydrogen in Si.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 507, doi. 10.1002/(SICI)1521-3951(199812)210:2<507::AID-PSSB507>3.0.CO;2-T

By:

Suezawa, M.;
Mori, R.

Publication type:

Article

Spectroscopy of Neutral and Charged Donors in Semiconductor Quantum Wells: Many Body Effects.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 587, doi. 10.1002/(SICI)1521-3951(199812)210:2<587::AID-PSSB587>3.0.CO;2-Y

By:

McCombe, B.D.;
Jiang, Z.X.;
Hawrylak, P.

Publication type:

Article

Metal-Insulator Transition Induced by Shallow Donor Impurity in n-ZnSe.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 301, doi. 10.1002/(SICI)1521-3951(199812)210:2<301::AID-PSSB301>3.0.CO;2-O

By:

Nedeoglo, D.D.;
Kasiyan, V.A.

Publication type:

Article

Effective Mass Calculation of the Shallow Acceptor Ground State g-Factor for A3B5 Semiconductors.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 865, doi. 10.1002/(SICI)1521-3951(199812)210:2<865::AID-PSSB865>3.0.CO;2-1

By:

Malyshev, A.V.;
Merkulov, I.A.;
Rodina, A.V.

Publication type:

Article

Polarized Light Absorption in Direct-Gap Semiconductors Related to Bound States in a Long-Range Deformation Potential of Dislocations.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 791, doi. 10.1002/(SICI)1521-3951(199812)210:2<791::AID-PSSB791>3.0.CO;2-9

By:

Razumova, M.A.;
Khotyaintsev, V.M.

Publication type:

Article

The Microscopic and Electronic Structure of Shallow Donors in SiC.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 415, doi. 10.1002/(SICI)1521-3951(199812)210:2<415::AID-PSSB415>3.0.CO;2-0

By:

Greulich-Weber, S.

Publication type:

Article

Doping of Homoepitaxial GaN Layers.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 437, doi. 10.1002/(SICI)1521-3951(199812)210:2<437::AID-PSSB437>3.0.CO;2-L

By:

Prystawko, P.;
Leszczynski, M.;
Beaumont, B.;
Gibart, P.;
Frayssinet, E.;
Knap, W.;
Wisniewski, P.;
Bockowski, M.;
Suski, T.;
Porowski, S.

Publication type:

Article

Internal Transitions of Neutral and Charged Magneto-Excitons in GaAs/AlGaAs Quantum Wells.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 341, doi. 10.1002/(SICI)1521-3951(199812)210:2<341::AID-PSSB341>3.0.CO;2-8

By:

Nickel, H.A.;
Herold, G.S.;
Yeo, T.;
Kioseoglou, G.;
Jiang, Z.X.;
McCombe, B.D.;
Petrou, A.;
Broido, D.;
Schaff, W.

Publication type:

Article

Lattice Defects in Undoped CdAs2 Monocrystals.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 569, doi. 10.1002/(SICI)1521-3951(199812)210:2<569::AID-PSSB569>3.0.CO;2-Y

By:

Marenkin, S.F.;
Morozova, V.A.;
Koshelev, O.G.;
Biskupski, G.

Publication type:

Article

Acceptor Correlated Centers in II-VI Compounds.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 459, doi. 10.1002/(SICI)1521-3951(199812)210:2<459::AID-PSSB459>3.0.CO;2-5

By:

Reinhold, B.;
Wienecke, M.;
Henneberger, F.;
Burchard, A.;
ISOLDE collaboration

Publication type:

Article

Far-Infrared Magnetospectroscopy of Shallow Donors in GaN.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 385, doi. 10.1002/(SICI)1521-3951(199812)210:2<385::AID-PSSB385>3.0.CO;2-D

By:

Witowski, A.M.;
Sadowski, M.L.;
Pakula, K.;
Wyder, P.

Publication type:

Article

Bound Excitons in Wide-Gap II-VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 327, doi. 10.1002/(SICI)1521-3951(199812)210:2<327::AID-PSSB327>3.0.CO;2-T

By:

Hoffmann, A.;
Kutzer, V.;
Göldner, A.

Publication type:

Article

Hole Transport in the Upper Hubbard Band in Cu-Doped Germanium under Uniaxial Pressure.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 253, doi. 10.1002/(SICI)1521-3951(199812)210:2<253::AID-PSSB253>3.0.CO;2-0

By:

Walukiewicz, W.;
Dubon, O.D.;
Silvestri, H.H.;
Haller, E.E.

Publication type:

Article

Photoluminescence of Nitrogen-Doped ZnSe Layers.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 367, doi. 10.1002/(SICI)1521-3951(199812)210:2<367::AID-PSSB367>3.0.CO;2-D

By:

German, M.;
Kartheuser, E.;
Soltani, M.;
Pages, O.;
Certier, M.;
Taudt, W.;
Heuken, M.

Publication type:

Article

Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 389, doi. 10.1002/(SICI)1521-3951(199812)210:2<389::AID-PSSB389>3.0.CO;2-Y

By:

Bayerl, M.W.;
Brandt, M.S.;
Angerer, H.;
Ambacher, O.;
Stutzmann, M.

Publication type:

Article

Confined and Interface Phonon-Induced Shift in Shallow Donor Binding Energy of Quantum Wires.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 711, doi. 10.1002/(SICI)1521-3951(199812)210:2<711::AID-PSSB711>3.0.CO;2-4

By:

Vartanian, A.L.;
Asatrian, A.L.

Publication type:

Article

Magneto-Spectroscopy of Beryllium Impurity in Gallium Arsenide.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 821, doi. 10.1002/(SICI)1521-3951(199812)210:2<821::AID-PSSB821>3.0.CO;2-X

By:

Lewis, R.A.;
Henini, M.

Publication type:

Article

Di-Carbon Complexes in AlAs and GaAs.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 869, doi. 10.1002/(SICI)1521-3951(199812)210:2<869::AID-PSSB869>3.0.CO;2-M

By:

Latham, C.D.;
Jones, R.;
Wagner, J.;
Davidson, B.R.;
Newman, R.C.;
Button, C.C.;
Briddon, P.R.;
Öberg, S.

Publication type:

Article

Role of Shallow Bound States in Emission Processes of Rare-Earth Doped Semiconductors.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 737, doi. 10.1002/(SICI)1521-3951(199812)210:2<737::AID-PSSB737>3.0.CO;2-9

By:

Gregorkiewicz, T.;
Thao, D.T.X.;
Langer, J.M.

Publication type:

Article

Exchange-Correlation Effects on a Multicomponent Isotropic Hole Gas in Semiconductors.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 777, doi. 10.1002/(SICI)1521-3951(199812)210:2<777::AID-PSSB777>3.0.CO;2-U

By:

Beliaev, D.;
Scolfaro, L.M.R.;
Leite, J.R.;
Sipahi, G.M.

Publication type:

Article

Model Structure for D− States in GaAs-(Ga,Al)As Quantum Wells.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 605, doi. 10.1002/(SICI)1521-3951(199812)210:2<605::AID-PSSB605>3.0.CO;2-X

By:

Mikhailov, I.D.;
Betancur, F.J.;
Marín, J.H.;
Oliveira, L.E.

Publication type:

Article

A Shallow State Coexisting with the DX Center in Te-Doped AlGaSb.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 759, doi. 10.1002/(SICI)1521-3951(199812)210:2<759::AID-PSSB759>3.0.CO;2-U

By:

Baraldi, A.;
Franchi, S.;
Chezzi, C.;
Magnanini, R.;
Parisini, A.;
Tarricone, L.

Publication type:

Article

Magneto-Optical Properties of a Hydrogen-Related Defect in CdTe.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 513, doi. 10.1002/(SICI)1521-3951(199812)210:2<513::AID-PSSB513>3.0.CO;2-4

By:

Hamann, J.;
Worschech, L.;
Blass, D.;
Hu, C.Y.;
Filz, T.;
Ossau, W.;
Ostheimer, V.;
Schmitz, C.;
Wolf, H.;
Wichert, Th.

Publication type:

Article

Shallow Acceptor States in SiGe Quantum Wells.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 667, doi. 10.1002/(SICI)1521-3951(199812)210:2<667::AID-PSSB667>3.0.CO;2-1

By:

Kagan, M.S.;
Altukhov, I.V.;
Korolev, K.A.;
Orlov, D.V.;
Sinis, V.P.;
Schmalz, K.;
Thomas, S.G.;
Wang, K.L.;
Yassievich, I.N.

Publication type:

Article

Observation of Stimulated Raman Scattering in Orthorhombic Na2SO4 and Cubic NaBrO3 at 300 K under Picosecond Excitation.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. R7, doi. 10.1002/(SICI)1521-3951(199812)210:2<R7::AID-PSSB99997>3.0.CO;2-E

By:

Franz, P.;
Egger, P.;
Hulliger, J.;
Findeisen, J.;
Kaminskii, A.A.;
Eichler, H.J.

Publication type:

Article

Many-Body Effects for Bound States in the Quasi-One-Dimensional Electron Gas: Effects of the Valley Degeneracy.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 609, doi. 10.1002/(SICI)1521-3951(199812)210:2<609::AID-PSSB609>3.0.CO;2-H

By:

Calmels, L.;
Gold, A.

Publication type:

Article

Far-Infrared Spectroscopy of Shallow Acceptors in Strained Ge/GeSi Quantum Well Heterostructures.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 649, doi. 10.1002/(SICI)1521-3951(199812)210:2<649::AID-PSSB649>3.0.CO;2-1

By:

Aleshkin, V.Ya.;
Gavrilenko, V.I.;
Erofeeva, I.V.;
Korotkov, A.L.;
Kozlov, D.V.;
Kuznetsov, O.A.;
Moldavskaya, M.D.

Publication type:

Article

Effect of Melt Stoichiometry on Shallow Acceptor Formation in Heavily Doped GaAs.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 575, doi. 10.1002/(SICI)1521-3951(199812)210:2<575::AID-PSSB575>3.0.CO;2-9

By:

Paetzold, O.;
Irmer, G.

Publication type:

Article

Binding Energy and Structure of Localized Biexcitons in Quantum Wells.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 689, doi. 10.1002/(SICI)1521-3951(199812)210:2<689::AID-PSSB689>3.0.CO;2-M

By:

Riva, C.;
Varga, K.;
Schweigert, V.A.;
Peeters, F.M.

Publication type:

Article

Gap States Caused by Oxygen Precipitates and Their Hydrogen Passivation in Czochralski Silicon Crystals.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 557, doi. 10.1002/(SICI)1521-3951(199812)210:2<557::AID-PSSB557>3.0.CO;2-9

By:

Koizuka, M.;
Yamada-Kaneta, H.

Publication type:

Article

Individual Thermal Donor Species Studied with High-Field Magnetic Resonance.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 539, doi. 10.1002/(SICI)1521-3951(199812)210:2<539::AID-PSSB539>3.0.CO;2-9

By:

Dirksen, Ruud;
Gregorkiewicz, T.;
Ammerlaan, C.A.J.

Publication type:

Article

Photoluminescence Studies of Mg-Doped and Si-Doped Gallium Nitride Epilayers.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 465, doi. 10.1002/(SICI)1521-3951(199812)210:2<465::AID-PSSB465>3.0.CO;2-H

By:

Hess, S.;
Taylor, R.A.;
Ryan, J.F.;
Cain, N.J.;
Roberts, V.;
Roberts, J.

Publication type:

Article

Multiple Bound Exciton Associated with the Nitrogen Donor in 3C Silicon Carbide.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 407, doi. 10.1002/(SICI)1521-3951(199812)210:2<407::AID-PSSB407>3.0.CO;2-X

By:

Bergman, J.P.;
Janzén, E.;
Choyke, W.J.

Publication type:

Article

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 373, doi. 10.1002/(SICI)1521-3951(199812)210:2<373::AID-PSSB373>3.0.CO;2-P

By:

Stepniewski, R.;
Wysmolek, A.;
Potemski, M.;
Lusakowski, J.;
Korona, K.;
Pakula, K.;
Baranowski, J.M.;
Martinez, G.;
Wyder, P.;
Grzegory, I.;
Porowski, S.

Publication type:

Article

Comparison between the Theoretical Prediction of Codoping and the Recent Experimental Evidences in p-Type GaN, AlN, ZnSe, CuInS2 and n-Type Diamond.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 429, doi. 10.1002/(SICI)1521-3951(199812)210:2<429::AID-PSSB429>3.0.CO;2-H

By:

Katayama-Yoshida, H.;
Nishimatsu, T.;
Yamamoto, T.;
Orita, N.

Publication type:

Article

Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 395, doi. 10.1002/(SICI)1521-3951(199812)210:2<395::AID-PSSB395>3.0.CO;2-9

By:

Achtziger, N.;
Hülsen, C.;
Witthuhn, W.;
Linnarsson, M.K.;
Janson, M.;
Svensson, B.G.

Publication type:

Article

The D1 Exciton in 4H-SiC.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 337, doi. 10.1002/(SICI)1521-3951(199812)210:2<337::AID-PSSB337>3.0.CO;2-P

By:

Egilsson, T.;
Bergman, J.P.;
Ivanov, I.G.;
Henry, A.;
Janzén, E.

Publication type:

Article

The Drastic Change of Magnetoresistance by the Rise of Electron Temperature in Sb Doped Si.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 263, doi. 10.1002/(SICI)1521-3951(199812)210:2<263::AID-PSSB263>3.0.CO;2-X

By:

Fujimoto, A.;
Kobori, H.;
Ohyama, T.;
Ishida, S.

Publication type:

Article

Ytterbium-Induced Impurity States and Insulator-Metal Transition under Pressure in Pb1-xGexTe Alloys.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 289, doi. 10.1002/(SICI)1521-3951(199812)210:2<289::AID-PSSB289>3.0.CO;2-1

By:

Skipetrov, E.P.;
Chernova, N.A.;
Slynko, E.I.;
Vygranenko, Yu.K.

Publication type:

Article

Radioactive Isotope Identifications of Au and Pt Photoluminescence Centres in Silicon.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 853, doi. 10.1002/(SICI)1521-3951(199812)210:2<853::AID-PSSB853>3.0.CO;2-D

By:

Henry, M.O.;
Alves, E.;
Bollmann, J.;
Burchard, A.;
Deicher, M.;
Fanciulli, M.;
Forkel-Wirth, D.;
Knopf, M.H.;
Lindner, S.;
Magerle, R.;
McGlynn, R.;
McGuigan, K.G.;
Soares, J.C.;
Stotzler, A.;
Weyer, G.

Publication type:

Article

Dissipative Tunnelling of Charge Carriers from Shallow Impurities.

Published in:

Physica Status Solidi (B), 1998, v. 210, n. 2, p. 835, doi. 10.1002/(SICI)1521-3951(199812)210:2<835::AID-PSSB835>3.0.CO;2-D

By:

Dargys, A.;
Žurauskienė, N.

Publication type:

Article