Works matching IS 03701972 AND DT 1998 AND VI 210 AND IP 2
Results: 107
Competition between Long-Living and D<sup>−</sup>(A<sup>+</sup>) States of Donors and Acceptors in Silicon.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 815, doi. 10.1002/(SICI)1521-3951(199812)210:2<815::AID-PSSB815>3.0.CO;2-L
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The Effects of Quantum Confinement and Magnetic Fields on the Binding Energy of Hydrogenic Impurities in Low-Dimensional Systems.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 723, doi. 10.1002/(SICI)1521-3951(199812)210:2<723::AID-PSSB723>3.0.CO;2-T
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Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 631, doi. 10.1002/(SICI)1521-3951(199812)210:2<631::AID-PSSB631>3.0.CO;2-0
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Interaction of a Laser Field with a Semiconductor System: Application to Shallow-Impurity Levels of Quantum Wells.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 671, doi. 10.1002/(SICI)1521-3951(199812)210:2<671::AID-PSSB671>3.0.CO;2-L
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Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 859, doi. 10.1002/(SICI)1521-3951(199812)210:2<859::AID-PSSB859>3.0.CO;2-Q
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Theoretical Calculations of Shallow Acceptor States in Strained Quantum Well Structures.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 693, doi. 10.1002/(SICI)1521-3951(199812)210:2<693::AID-PSSB693>3.0.CO;2-5
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Magneto-Donors and Donor-Bound Excitons in GaAssol;Ga<sub>0.67</sub>Al<sub>0.33</sub>As Heterostructures in the Quantum Hall Regime.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 635, doi. 10.1002/(SICI)1521-3951(199812)210:2<635::AID-PSSB635>3.0.CO;2-L
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Infrared and Raman Spectroscopy of Acceptor-Bound Holes: Boron Acceptors in Isotopically Controlled 'Blue' Diamonds.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 451, doi. 10.1002/(SICI)1521-3951(199812)210:2<451::AID-PSSB451>3.0.CO;2-0
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Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 491, doi. 10.1002/(SICI)1521-3951(199812)210:2<491::AID-PSSB491>3.0.CO;2-L
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Optical Absorption Study of the Interaction between Group II Acceptors and Hydrogen in Si.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 507, doi. 10.1002/(SICI)1521-3951(199812)210:2<507::AID-PSSB507>3.0.CO;2-T
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Spectroscopy of Neutral and Charged Donors in Semiconductor Quantum Wells: Many Body Effects.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 587, doi. 10.1002/(SICI)1521-3951(199812)210:2<587::AID-PSSB587>3.0.CO;2-Y
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Metal-Insulator Transition Induced by Shallow Donor Impurity in n-ZnSe.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 301, doi. 10.1002/(SICI)1521-3951(199812)210:2<301::AID-PSSB301>3.0.CO;2-O
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The Microscopic and Electronic Structure of Shallow Donors in SiC.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 415, doi. 10.1002/(SICI)1521-3951(199812)210:2<415::AID-PSSB415>3.0.CO;2-0
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Internal Transitions of Neutral and Charged Magneto-Excitons in GaAs/AlGaAs Quantum Wells.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 341, doi. 10.1002/(SICI)1521-3951(199812)210:2<341::AID-PSSB341>3.0.CO;2-8
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Lattice Defects in Undoped CdAs<sub>2</sub> Monocrystals.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 569, doi. 10.1002/(SICI)1521-3951(199812)210:2<569::AID-PSSB569>3.0.CO;2-Y
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Doping of Homoepitaxial GaN Layers.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 437, doi. 10.1002/(SICI)1521-3951(199812)210:2<437::AID-PSSB437>3.0.CO;2-L
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Acceptor Correlated Centers in II-VI Compounds.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 459, doi. 10.1002/(SICI)1521-3951(199812)210:2<459::AID-PSSB459>3.0.CO;2-5
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Far-Infrared Magnetospectroscopy of Shallow Donors in GaN.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 385, doi. 10.1002/(SICI)1521-3951(199812)210:2<385::AID-PSSB385>3.0.CO;2-D
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Bound Excitons in Wide-Gap II-VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 327, doi. 10.1002/(SICI)1521-3951(199812)210:2<327::AID-PSSB327>3.0.CO;2-T
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Hole Transport in the Upper Hubbard Band in Cu-Doped Germanium under Uniaxial Pressure.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 253, doi. 10.1002/(SICI)1521-3951(199812)210:2<253::AID-PSSB253>3.0.CO;2-0
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Photoluminescence of Nitrogen-Doped ZnSe Layers.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 367, doi. 10.1002/(SICI)1521-3951(199812)210:2<367::AID-PSSB367>3.0.CO;2-D
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Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 389, doi. 10.1002/(SICI)1521-3951(199812)210:2<389::AID-PSSB389>3.0.CO;2-Y
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Magneto-Spectroscopy of Beryllium Impurity in Gallium Arsenide.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 821, doi. 10.1002/(SICI)1521-3951(199812)210:2<821::AID-PSSB821>3.0.CO;2-X
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Confined and Interface Phonon-Induced Shift in Shallow Donor Binding Energy of Quantum Wires.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 711, doi. 10.1002/(SICI)1521-3951(199812)210:2<711::AID-PSSB711>3.0.CO;2-4
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Effective Mass Calculation of the Shallow Acceptor Ground State g-Factor for A<sub>3</sub>B<sub>5</sub> Semiconductors.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 865, doi. 10.1002/(SICI)1521-3951(199812)210:2<865::AID-PSSB865>3.0.CO;2-1
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Polarized Light Absorption in Direct-Gap Semiconductors Related to Bound States in a Long-Range Deformation Potential of Dislocations.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 791, doi. 10.1002/(SICI)1521-3951(199812)210:2<791::AID-PSSB791>3.0.CO;2-9
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Di-Carbon Complexes in AlAs and GaAs.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 869, doi. 10.1002/(SICI)1521-3951(199812)210:2<869::AID-PSSB869>3.0.CO;2-M
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Role of Shallow Bound States in Emission Processes of Rare-Earth Doped Semiconductors.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 737, doi. 10.1002/(SICI)1521-3951(199812)210:2<737::AID-PSSB737>3.0.CO;2-9
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Exchange-Correlation Effects on a Multicomponent Isotropic Hole Gas in Semiconductors.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 777, doi. 10.1002/(SICI)1521-3951(199812)210:2<777::AID-PSSB777>3.0.CO;2-U
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Model Structure for D<sup>−</sup> States in GaAs-(Ga,Al)As Quantum Wells.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 605, doi. 10.1002/(SICI)1521-3951(199812)210:2<605::AID-PSSB605>3.0.CO;2-X
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A Shallow State Coexisting with the DX Center in Te-Doped AlGaSb.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 759, doi. 10.1002/(SICI)1521-3951(199812)210:2<759::AID-PSSB759>3.0.CO;2-U
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Magneto-Optical Properties of a Hydrogen-Related Defect in CdTe.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 513, doi. 10.1002/(SICI)1521-3951(199812)210:2<513::AID-PSSB513>3.0.CO;2-4
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Shallow Acceptor States in SiGe Quantum Wells.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 667, doi. 10.1002/(SICI)1521-3951(199812)210:2<667::AID-PSSB667>3.0.CO;2-1
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Observation of Stimulated Raman Scattering in Orthorhombic Na<sub>2</sub>SO<sub>4</sub> and Cubic NaBrO<sub>3</sub> at 300 K under Picosecond Excitation.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. R7, doi. 10.1002/(SICI)1521-3951(199812)210:2<R7::AID-PSSB99997>3.0.CO;2-E
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Many-Body Effects for Bound States in the Quasi-One-Dimensional Electron Gas: Effects of the Valley Degeneracy.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 609, doi. 10.1002/(SICI)1521-3951(199812)210:2<609::AID-PSSB609>3.0.CO;2-H
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Far-Infrared Spectroscopy of Shallow Acceptors in Strained Ge/GeSi Quantum Well Heterostructures.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 649, doi. 10.1002/(SICI)1521-3951(199812)210:2<649::AID-PSSB649>3.0.CO;2-1
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Effect of Melt Stoichiometry on Shallow Acceptor Formation in Heavily Doped GaAs.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 575, doi. 10.1002/(SICI)1521-3951(199812)210:2<575::AID-PSSB575>3.0.CO;2-9
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Binding Energy and Structure of Localized Biexcitons in Quantum Wells.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 689, doi. 10.1002/(SICI)1521-3951(199812)210:2<689::AID-PSSB689>3.0.CO;2-M
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Gap States Caused by Oxygen Precipitates and Their Hydrogen Passivation in Czochralski Silicon Crystals.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 557, doi. 10.1002/(SICI)1521-3951(199812)210:2<557::AID-PSSB557>3.0.CO;2-9
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Individual Thermal Donor Species Studied with High-Field Magnetic Resonance.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 539, doi. 10.1002/(SICI)1521-3951(199812)210:2<539::AID-PSSB539>3.0.CO;2-9
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Photoluminescence Studies of Mg-Doped and Si-Doped Gallium Nitride Epilayers.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 465, doi. 10.1002/(SICI)1521-3951(199812)210:2<465::AID-PSSB465>3.0.CO;2-H
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Multiple Bound Exciton Associated with the Nitrogen Donor in 3C Silicon Carbide.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 407, doi. 10.1002/(SICI)1521-3951(199812)210:2<407::AID-PSSB407>3.0.CO;2-X
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Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 373, doi. 10.1002/(SICI)1521-3951(199812)210:2<373::AID-PSSB373>3.0.CO;2-P
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Comparison between the Theoretical Prediction of Codoping and the Recent Experimental Evidences in p-Type GaN, AlN, ZnSe, CuInS<sub>2</sub> and n-Type Diamond.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 429, doi. 10.1002/(SICI)1521-3951(199812)210:2<429::AID-PSSB429>3.0.CO;2-H
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Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 395, doi. 10.1002/(SICI)1521-3951(199812)210:2<395::AID-PSSB395>3.0.CO;2-9
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The D<sub>1</sub> Exciton in 4H-SiC.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 337, doi. 10.1002/(SICI)1521-3951(199812)210:2<337::AID-PSSB337>3.0.CO;2-P
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The Drastic Change of Magnetoresistance by the Rise of Electron Temperature in Sb Doped Si.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 263, doi. 10.1002/(SICI)1521-3951(199812)210:2<263::AID-PSSB263>3.0.CO;2-X
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Ytterbium-Induced Impurity States and Insulator-Metal Transition under Pressure in Pb<sub>1-x</sub>Ge<sub>x</sub>Te Alloys.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 289, doi. 10.1002/(SICI)1521-3951(199812)210:2<289::AID-PSSB289>3.0.CO;2-1
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Radioactive Isotope Identifications of Au and Pt Photoluminescence Centres in Silicon.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 853, doi. 10.1002/(SICI)1521-3951(199812)210:2<853::AID-PSSB853>3.0.CO;2-D
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Dissipative Tunnelling of Charge Carriers from Shallow Impurities.
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- Physica Status Solidi (B), 1998, v. 210, n. 2, p. 835, doi. 10.1002/(SICI)1521-3951(199812)210:2<835::AID-PSSB835>3.0.CO;2-D
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