Works matching IS 03701972 AND DT 1997 AND VI 202 AND IP 1

Results: 29

Surface Studies on SiC as Related to Contacts.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 549, doi. 10.1002/1521-3951(199707)202:1<549::AID-PSSB549>3.0.CO;2-6

By:

Bozack, M. J.

Publication type:

Article

Atomic Structure of Hexagonal SiC Surfaces.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 475, doi. 10.1002/1521-3951(199707)202:1<475::AID-PSSB475>3.0.CO;2-E

By:

Starke, U.

Publication type:

Article

Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 5, doi. 10.1002/1521-3951(199707)202:1<5::AID-PSSB5>3.0.CO;2-L

By:

Lambrecht, W. R. L.;
Limpijumnong, S.;
Rashkeev, S. N.;
Segall, B.

Publication type:

Article

Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 163, doi. 10.1002/1521-3951(199707)202:1<163::AID-PSSB163>3.0.CO;2-1

By:

Takahashi, J.;
Ohtani, N.

Publication type:

Article

SiC Seeded Crystal Growth.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 149, doi. 10.1002/1521-3951(199707)202:1<149::AID-PSSB149>3.0.CO;2-M

By:

Glass, R. C.;
Henshall, D.;
Tsvetkov, V. F.;
Carter, C. H.

Publication type:

Article

Simulations and Experiments of 3C-SiC/Si Heteroepitaxial Growth.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 405, doi. 10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5

By:

Kitabatake, M.

Publication type:

Article

Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 221, doi. 10.1002/1521-3951(199707)202:1<221::AID-PSSB221>3.0.CO;2-L

By:

Gorin, S. N.;
Ivanova, L. M.

Publication type:

Article

3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 335, doi. 10.1002/1521-3951(199707)202:1<335::AID-PSSB335>3.0.CO;2-Y

By:

Nagasawa, H.;
Yagi, K.

Publication type:

Article

Homoepitaxial SiC Growth by Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 379, doi. 10.1002/1521-3951(199707)202:1<379::AID-PSSB379>3.0.CO;2-2

By:

Kern, R. S.;
Järrendahl, K.;
Tanaka, S.;
Davis, R. F.

Publication type:

Article

Step-Controlled Epitaxial Growth of High-Quality SiC Layers.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 247, doi. 10.1002/1521-3951(199707)202:1<247::AID-PSSB247>3.0.CO;2-Q

By:

Kimoto, T.;
Itoh, A.;
Matsunami, H.

Publication type:

Article

Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 137, doi. 10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO;2-Y

By:

Augustine, G.;
Hobgood, McD.;
Balakrishna, V.;
Dunne, G.;
Hopkins, R. H.

Publication type:

Article

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 177, doi. 10.1002/1521-3951(199707)202:1<177::AID-PSSB177>3.0.CO;2-I

By:

Vodakov, Yu.A.;
Roenkov, A. D.;
Ramm, M. G.;
Mokhov, E. N.;
Makarov, Yu.N.

Publication type:

Article

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 529, doi. 10.1002/1521-3951(199707)202:1<529::AID-PSSB529>3.0.CO;2-E

By:

Powell, J. A.;
Larkin, D. J.

Publication type:

Article

SiC Dopant Incorporation Control Using Site-Competition CVD.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 305, doi. 10.1002/1521-3951(199707)202:1<305::AID-PSSB305>3.0.CO;2-9

By:

Larkin, D. J.

Publication type:

Article

Polytypism and Properties of Silicon Carbide.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 35, doi. 10.1002/1521-3951(199707)202:1<35::AID-PSSB35>3.0.CO;2-8

By:

Bechstedt, F.;
Käckell, P.;
Zywietz, A.;
Karch, K.;
Adolph, B.;
Tenelsen, K.;
Furthmüller, J.

Publication type:

Article

First-Principles Calculations of Impurity States in 3C-SiC.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 125, doi. 10.1002/1521-3951(199707)202:1<125::AID-PSSB125>3.0.CO;2-9

By:

Fukumoto, A.

Publication type:

Article

Global Band Structure and Near-Band-Edge States.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 107, doi. 10.1002/1521-3951(199707)202:1<107::AID-PSSB107>3.0.CO;2-9

By:

Wellenhofer, G.;
Rössler, U.

Publication type:

Article

A Review of SiC Reactive Ion Etching in Fluorinated Plasmas.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 605, doi. 10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO;2-Y

By:

Yih, P. H.;
Saxena, V.;
Steckl, A. J.

Publication type:

Article

Homoepitaxial VPE Growth of SiC Active Layers.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 263, doi. 10.1002/1521-3951(199707)202:1<263::AID-PSSB263>3.0.CO;2-Y

By:

Burk, A. A.;
Rowland, L. B.

Publication type:

Article

Structure and Properties of Cubic Silicon Carbide (100) Surfaces: A Review.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 447, doi. 10.1002/1521-3951(199707)202:1<447::AID-PSSB447>3.0.CO;2-I

By:

Bermudez, V. M.

Publication type:

Article

Simulation of Sublimation Growth of SiC Single Crystals.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 201, doi. 10.1002/1521-3951(199707)202:1<201::AID-PSSB201>3.0.CO;2-T

By:

Karpov, S. Yu.;
Makarov, Yu. N.;
Ramm, M. S.

Publication type:

Article

Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 281, doi. 10.1002/1521-3951(199707)202:1<281::AID-PSSB281>3.0.CO;2-Y

By:

Rupp, R.;
Makarov, Yu.N.;
Behner, H.;
Wiedenhofer, A.

Publication type:

Article

Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiC.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 81, doi. 10.1002/1521-3951(199707)202:1<81::AID-PSSB81>3.0.CO;2-M

By:

Chen, An-Ban;
Srichaikul, P.

Publication type:

Article

Atomic and Electronic Structure of SiC Surfaces from ab-initio Calculations.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 421, doi. 10.1002/1521-3951(199707)202:1<421::AID-PSSB421>3.0.CO;2-D

By:

Pollmann, J.;
Krüger, P.;
Sabisch, M.

Publication type:

Article

On the Band Gap Variation in SiC Polytypes.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 63, doi. 10.1002/1521-3951(199707)202:1<63::AID-PSSB63>3.0.CO;2-E

By:

van Haeringen, W.;
Bobbert, P. A.;
Backes, W. H.

Publication type:

Article

Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam Epitaxy.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 359, doi. 10.1002/1521-3951(199707)202:1<359::AID-PSSB359>3.0.CO;2-A

By:

Fuyuki, T.;
Hatayama, T.;
Matsunami, H.

Publication type:

Article

Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 501, doi. 10.1002/1521-3951(199707)202:1<501::AID-PSSB501>3.0.CO;2-H

By:

Mårtensson, P.;
Owman, F.;
Johansson, L. I.

Publication type:

Article

The Physics of Ohmic Contacts to SiC.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 581, doi. 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO;2-M

By:

Crofton, J.;
Porter, L. M.;
Williams, J. R.

Publication type:

Article

Growth of SiC by 'Hot-Wall' CVD and HTCVD.

Published in:

Physica Status Solidi (B), 1997, v. 202, n. 1, p. 321, doi. 10.1002/1521-3951(199707)202:1<321::AID-PSSB321>3.0.CO;2-H

By:

Kordina, O.;
Hallin, C.;
Henry, A.;
Bergman, J. P.;
Ivanov, I.;
Ellison, A.;
Son, N. T.;
Janzén, E.

Publication type:

Article