Works matching IS 03701972 AND DT 1997 AND VI 202 AND IP 1


Results: 29
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    Atomic Structure of Hexagonal SiC Surfaces.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 475, doi. 10.1002/1521-3951(199707)202:1<475::AID-PSSB475>3.0.CO;2-E
    By:
    • Starke, U.
    Publication type:
    Article
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    SiC Seeded Crystal Growth.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 149, doi. 10.1002/1521-3951(199707)202:1<149::AID-PSSB149>3.0.CO;2-M
    By:
    • Glass, R. C.;
    • Henshall, D.;
    • Tsvetkov, V. F.;
    • Carter, C. H.
    Publication type:
    Article
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    9

    Homoepitaxial SiC Growth by Molecular Beam Epitaxy.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 379, doi. 10.1002/1521-3951(199707)202:1<379::AID-PSSB379>3.0.CO;2-2
    By:
    • Kern, R. S.;
    • Järrendahl, K.;
    • Tanaka, S.;
    • Davis, R. F.
    Publication type:
    Article
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    Polytypism and Properties of Silicon Carbide.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 35, doi. 10.1002/1521-3951(199707)202:1<35::AID-PSSB35>3.0.CO;2-8
    By:
    • Bechstedt, F.;
    • Käckell, P.;
    • Zywietz, A.;
    • Karch, K.;
    • Adolph, B.;
    • Tenelsen, K.;
    • Furthmüller, J.
    Publication type:
    Article
    16
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    Global Band Structure and Near-Band-Edge States.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 107, doi. 10.1002/1521-3951(199707)202:1<107::AID-PSSB107>3.0.CO;2-9
    By:
    • Wellenhofer, G.;
    • Rössler, U.
    Publication type:
    Article
    18
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    Homoepitaxial VPE Growth of SiC Active Layers.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 263, doi. 10.1002/1521-3951(199707)202:1<263::AID-PSSB263>3.0.CO;2-Y
    By:
    • Burk, A. A.;
    • Rowland, L. B.
    Publication type:
    Article
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    On the Band Gap Variation in SiC Polytypes.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 63, doi. 10.1002/1521-3951(199707)202:1<63::AID-PSSB63>3.0.CO;2-E
    By:
    • van Haeringen, W.;
    • Bobbert, P. A.;
    • Backes, W. H.
    Publication type:
    Article
    26
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    The Physics of Ohmic Contacts to SiC.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 581, doi. 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO;2-M
    By:
    • Crofton, J.;
    • Porter, L. M.;
    • Williams, J. R.
    Publication type:
    Article
    29

    Growth of SiC by 'Hot-Wall' CVD and HTCVD.

    Published in:
    Physica Status Solidi (B), 1997, v. 202, n. 1, p. 321, doi. 10.1002/1521-3951(199707)202:1<321::AID-PSSB321>3.0.CO;2-H
    By:
    • Kordina, O.;
    • Hallin, C.;
    • Henry, A.;
    • Bergman, J. P.;
    • Ivanov, I.;
    • Ellison, A.;
    • Son, N. T.;
    • Janzén, E.
    Publication type:
    Article