Works matching IS 03701972 AND DT 1996 AND VI 198 AND IP 1
Results: 76
Optical Properties of Pressure-Polymerized C60.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 545, doi. 10.1002/pssb.2221980173
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An Investigation of the Formation Mechanisms of Electric Field Domains in GaAs/AlAs Superlattices.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 307, doi. 10.1002/pssb.2221980140
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Second-Order Pretransitional Effects in the High Pressure Phase Transition of Indium Nitride.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 469, doi. 10.1002/pssb.2221980161
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Si in GaN - On the Nature of the Background Donor.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 243, doi. 10.1002/pssb.2221980132
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Pressure Dependence of the Electronic Band Gap in 6HSic.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 81, doi. 10.1002/pssb.2221980111
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Far Infrared Spectroscopy of Semiconductors at Large Hydrostatic Pressures.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 153, doi. 10.1002/pssb.2221980122
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New Structural Systematics in the II-VI, III-V, and Group-IV Semiconductors at High Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 389, doi. 10.1002/pssb.2221980151
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Structural Stability of the Group-VIb Elements under High Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 475, doi. 10.1002/pssb.2221980162
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Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 251, doi. 10.1002/pssb.2221980133
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Electronic Structures of Semiconductors under Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 23, doi. 10.1002/pssb.2221980104
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Identification of the L-Band in In<sub>x</sub>Ga<sub>1−x</sub>P/In)<sub>0.5</sub>Al<sub>0.5</sub>P Multiple Quantum Wells from High Pressure Measurement.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 337, doi. 10.1002/pssb.2221980144
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Transverse Acoustic Phonons of Germanium up to 9.7 GPa by Neutron Inelastic Scattering.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 105, doi. 10.1002/pssb.2221980115
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DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs<sub>1−x</sub>P<sub>x</sub>.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 193, doi. 10.1002/pssb.2221980126
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High Pressure Structural Study of I-III-VI<sub>2</sub> Chalcopyrites.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 427, doi. 10.1002/pssb.2221980155
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Structural Studies of Bulk Amorphous GaSb under High Pressures.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 503, doi. 10.1002/pssb.2221980166
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Galvanomagnetic Measurements of the 2D Electron-Hole Gas in GaSb/InAs/GaSb Quantum Wells under Pressure up to 2.5 GPa.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 289, doi. 10.1002/pssb.2221980137
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Determination of the Linear Pressure Coefficients of Semiconductor Bandgaps.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 57, doi. 10.1002/pssb.2221980108
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Determination of the Pressure Dependence of Band-Structure Parameters by Two-Photon Spectroscopy.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 71, doi. 10.1002/pssb.2221980110
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Shubnikov-de Haas Effect in (Cd<sub>1−x−y</sub>Zn<sub>x</sub>Mn<sub>y</sub>)<sub>3</sub>As<sub>2</sub> under Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 135, doi. 10.1002/pssb.2221980119
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High Pressure Phases of AlSb from ab-initio Theory.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 455, doi. 10.1002/pssb.2221980159
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Determination of Gain and Loss Mechanisms in Semiconductor Lasers Using Pressure Techniques.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 363, doi. 10.1002/pssb.2221980148
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Hydrostatic Pressure Dependence of the Threshold Current in 1.5 μm Strained Quantum Well Lasers.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 381, doi. 10.1002/pssb.2221980150
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Pressure Induced Phase Transitions in Alkaline Earth Tungstates.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 539, doi. 10.1002/pssb.2221980172
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Semiconductors under Uniaxial Strain.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 5, doi. 10.1002/pssb.2221980103
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Metal-Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 149, doi. 10.1002/pssb.2221980121
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Pressure Dependence of the Electronic Subband Structure of Strained In<sub>0.2</sub>Ga<sub>0.8</sub>As/GaAs MQWs.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 329, doi. 10.1002/pssb.2221980143
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Optical Absorption and Raman Scattering Measurements in CuAlSe<sub>2</sub> at High Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 99, doi. 10.1002/pssb.2221980114
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Pretransitional Behavior in Zincblende HgTe under High Pressure and Temperature.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 419, doi. 10.1002/pssb.2221980154
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Investigation of Coexistence of Weakly Relaxed Neutral Deep Donor (D°) and DX<sup>−</sup> States in Al<sub>x</sub>Ga<sub>1−x</sub>As:Se Using ICTS under Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 187, doi. 10.1002/pssb.2221980125
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ZnSb and GaSb Bulk Amorphous Semiconductors: Transport Properties.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 497, doi. 10.1002/pssb.2221980165
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Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 283, doi. 10.1002/pssb.2221980136
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The Effect of Pressure on the Concentration of Thermal Donors in Czochralski Grown Silicon.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 565, doi. 10.1002/pssb.2221980176
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Time-Resolved Photoluminescence Study of Ordered Ga<sub>0.5</sub>In<sub>0.5</sub>P under High Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 49, doi. 10.1002/pssb.2221980107
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Zn<sub>1−x</sub>Mg<sub>x</sub>Se Samples and a ZnSe/Zn<sub>0.93</sub>Mg<sub>0.07</sub>Se Quantum Well under Pressure: Optical Absorption and Photoluminescence.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 355, doi. 10.1002/pssb.2221980147
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Effects of Conduction Band Structure and Dimensionality of the Electron Gas on Transport Properties of InSe under Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 129, doi. 10.1002/pssb.2221980118
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Stability of Diamond at Megabar Pressures.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 447, doi. 10.1002/pssb.2221980158
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Photoluminescence Study of Rare-Earth Doped Semiconductors under Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 211, doi. 10.1002/pssb.2221980129
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Pressure-Tuned Resonance Raman Scattering in InAs/GaSb Superlattices.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 321, doi. 10.1002/pssb.2221980142
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Effect of Pressure on the Refractive Index and the Band Gap of Cesium Halides.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 93, doi. 10.1002/pssb.2221980113
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Nonmonotonic Behavior of the Threshold Current of Compressively Strained 1.3 μm InGaAsP Lasers with Hydrostatic Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 375, doi. 10.1002/pssb.2221980149
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High Pressure Effects on Optical Properties of CdS.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 521, doi. 10.1002/pssb.2221980169
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Shubnikov-de Haas Oscillations in Fe- and Co-Doped HgSe under Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 143, doi. 10.1002/pssb.2221980120
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High Pressure Stability in III-V and II-VI Binary Compounds and the Cmcm Phase A Theoretical Study.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 461, doi. 10.1002/pssb.2221980160
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Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 235, doi. 10.1002/pssb.2221980131
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High-pressure Raman Scattering and Optical Absorption Study of β-GeS<sub>2</sub>.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 533, doi. 10.1002/pssb.2221980171
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Preface.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. i, doi. 10.1002/pssb.2221980102
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- Article
Structural and Optical Properties of HgO at High Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 411, doi. 10.1002/pssb.2221980153
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High Pressure Magnetophotoluminescence in Diluted Magnetic Semiconductors Cd<sub>1−x</sub>Mn<sub>x</sub>Se and Cd<sub>1−x</sub>Co<sub>x</sub>Se.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 61, doi. 10.1002/pssb.2221980109
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Coexistence of DX and A<sub>1</sub> States in Highly Doped GaAs:Ge, Te and GaAs:Si, Te.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 181, doi. 10.1002/pssb.2221980124
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Bulk Amorphous GaSb Semiconductors Prepared by Thermobaric Treatment: Formation and Properties.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 491, doi. 10.1002/pssb.2221980164
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