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Origins of Electrical Compensation in Si‐Doped HVPE GaN.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568
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Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200489
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- Article
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200508
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- Publication type:
- Article
Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200489
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- Publication type:
- Article
Masthead.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202370022
- Publication type:
- Article
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200508
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- Publication type:
- Article
Origins of Electrical Compensation in Si‐Doped HVPE GaN.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568
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- Publication type:
- Article
Nitride Semiconductors.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202300286
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- Article
Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200583
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- Article
Growth of (101¯1) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200582
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- Article
Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200578
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- Article
The Introduction of Intermediate Layers for InGaN Growth on ScAlMgO<sub>4</sub> through Trihalide Vapor‐Phase Epitaxy.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200572
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- Article
Control of Polarity of AlN Grown on Sapphire Substrate and Growth with Both Al‐ and N‐Polarities.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200576
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- Article
Origins of Electrical Compensation in Si‐Doped HVPE GaN.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200568
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- Publication type:
- Article
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200565
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- Article
Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200549
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- Publication type:
- Article
Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200489
- By:
- Publication type:
- Article
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200508
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- Publication type:
- Article
Quasi‐Van der Waals Epitaxial Growth of GaN on Hexagonal Boron Nitride via Metal–Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200496
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Reduction in Residual Impurities in Chemical Vapor Deposition–Grown Hexagonal Boron Nitride Thin Films.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200352
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- Article
Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN.
- Published in:
- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200545
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On the Origin of the Yellow Luminescence Band in GaN.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200488
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- Article
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200487
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Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200492
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- Article