Found: 57
Select item for more details and to access through your institution.
Polarization effects in 2-DEG and 2-DHG AlGaN/AlN/GaN multi-heterostructures measured by electron holography.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1722, doi. 10.1002/pssb.201046198
- By:
- Publication type:
- Article
Content (Phys. Status Solidi B 7/2010).
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1573, doi. 10.1002/pssb.201040719
- Publication type:
- Article
Ab initio study of magnetoelectricity in composite multiferroics.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1600, doi. 10.1002/pssb.200945417
- By:
- Publication type:
- Article
High quality In<sub> x</sub>Ga<sub>1- x</sub>N thin films with x > 0.2 grown on silicon.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1747, doi. 10.1002/pssb.200983462
- By:
- Publication type:
- Article
Recent and forthcoming publications in pss.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1581, doi. 10.1002/pssb.201040720
- Publication type:
- Article
Hybridization and magnetic anisotropy of S-state ions in wurtzite DMS.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1691, doi. 10.1002/pssb.200983680
- By:
- Publication type:
- Article
Study on the spin polarization of a current through a hybrid resonant tunneling diode.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1786, doi. 10.1002/pssb.201000007
- By:
- Publication type:
- Article
Polarization engineering in GaN power transistors.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1735, doi. 10.1002/pssb.200983651
- By:
- Publication type:
- Article
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1658, doi. 10.1002/pssb.200983691
- By:
- Publication type:
- Article
High temperature defect equilibrium in ZnS:Cu single crystals.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1662, doi. 10.1002/pssb.200983673
- By:
- Publication type:
- Article
ZnO nanostructures for photovoltaic cells.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1633, doi. 10.1002/pssb.200983684
- By:
- Publication type:
- Article
FIB fabrication of ZnO nanotetrapod and cross-sensor.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1628, doi. 10.1002/pssb.200983695
- By:
- Publication type:
- Article
Valence-band splitting and optical anisotropy of AlN.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1679, doi. 10.1002/pssb.200983677
- By:
- Publication type:
- Article
Application of contactless electroreflectance to III-nitrides.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1616, doi. 10.1002/pssb.200983688
- By:
- Publication type:
- Article
Zinc oxide grown by atomic layer deposition - a material for novel 3D electronics.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1611, doi. 10.1002/pssb.200983699
- By:
- Publication type:
- Article
GaN smart power IC technology.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1732, doi. 10.1002/pssb.200983453
- By:
- Publication type:
- Article
Performance of scintillation materials at cryogenic temperatures.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1583, doi. 10.1002/pssb.200945500
- By:
- Publication type:
- Article
Back Cover (Phys. Status Solidi B 7/2010).
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. n/a, doi. 10.1002/pssb.201090014
- By:
- Publication type:
- Article
Shallow-donor impurity in coupled GaAs/Ga<sub>1− x</sub>Al<sub> x</sub>As quantum well wires: hydrostatic pressure and applied electric field effects.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1778, doi. 10.1002/pssb.200945519
- By:
- Publication type:
- Article
Ab initio calculations of optical spectra of a chiral (4,1) carbon nanotube.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1814, doi. 10.1002/pssb.200945416
- By:
- Publication type:
- Article
A conductivity-based selective etching for next generation GaN devices.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1713, doi. 10.1002/pssb.200983650
- By:
- Publication type:
- Article
Acceptor behavior of N<sub>2</sub>O in MOCVD-grown ZnO thin-film transistors.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1645, doi. 10.1002/pssb.200983683
- By:
- Publication type:
- Article
Comparison of dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by atomic layer deposition method.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1699, doi. 10.1002/pssb.200983687
- By:
- Publication type:
- Article
Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1707, doi. 10.1002/pssb.200983500
- By:
- Publication type:
- Article
Intersubband optics in GaN-based nanostructures - physics and applications.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1622, doi. 10.1002/pssb.200983694
- By:
- Publication type:
- Article
Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1683, doi. 10.1002/pssb.200983676
- By:
- Publication type:
- Article
Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1710, doi. 10.1002/pssb.200983526
- By:
- Publication type:
- Article
Clebsch-Gordan coefficients for scattering tensors in ZnO and other wurtzite semiconductors.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1802, doi. 10.1002/pssb.200945583
- By:
- Publication type:
- Article
Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1753, doi. 10.1002/pssb.200983537
- By:
- Publication type:
- Article
Spectra and energy levels of Eu<sup>3+</sup> in cubic phase Gd<sub>2</sub>O<sub>3</sub>.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1807, doi. 10.1002/pssb.200945602
- By:
- Publication type:
- Article
Inside Back Cover (Phys. Status Solidi B 7/2010).
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. n/a, doi. 10.1002/pssb.201090013
- By:
- Publication type:
- Article
Mutual doping of components in magnetoelectric particulate PbZr<sub>0.53</sub>Ti<sub>0.47</sub>O<sub>3</sub>-Mn<sub>0.4</sub>Zn<sub>0.6</sub>Fe<sub>2</sub>O<sub>4</sub> composite.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1769, doi. 10.1002/pssb.200945408
- By:
- Publication type:
- Article
Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1797, doi. 10.1002/pssb.200945565
- By:
- Publication type:
- Article
Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1649, doi. 10.1002/pssb.200983671
- By:
- Publication type:
- Article
Surface morphology and photoluminescence studies of Sb-doped ZnO layers grown using MOCVD.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1687, doi. 10.1002/pssb.200983693
- By:
- Publication type:
- Article
Electronic and magnetic properties of Co-doped ZnO: First principles study.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1641, doi. 10.1002/pssb.200983682
- By:
- Publication type:
- Article
Raman scattering characterization of p-type AlGaN layers.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1725, doi. 10.1002/pssb.200983568
- By:
- Publication type:
- Article
Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO<sub>2</sub> substrates.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1750, doi. 10.1002/pssb.200983521
- By:
- Publication type:
- Article
Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1637, doi. 10.1002/pssb.200983675
- By:
- Publication type:
- Article
Layer thickness dependent carrier recombination rate in HVPE GaN.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1703, doi. 10.1002/pssb.200983532
- By:
- Publication type:
- Article
The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1761, doi. 10.1002/pssb.200983617
- By:
- Publication type:
- Article
Optical characterization of nitrogen- and antimony-doped ZnO thin layers grown by MOVPE.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1671, doi. 10.1002/pssb.200983679
- By:
- Publication type:
- Article
Polarization properties in deep-ultraviolet AlGaN quantum wells with various substrate orientations.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1717, doi. 10.1002/pssb.200983433
- By:
- Publication type:
- Article
Effects of composition distribution on electronic structures of self-assembled InGaN/GaN quantum dots.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1764, doi. 10.1002/pssb.200983558
- By:
- Publication type:
- Article
Preface.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1609, doi. 10.1002/pssb.200983700
- By:
- Publication type:
- Article
Front Cover (Phys. Status Solidi B 7/2010).
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. n/a, doi. 10.1002/pssb.201090012
- By:
- Publication type:
- Article
Information for authors.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1830, doi. 10.1002/pssb.201040721
- Publication type:
- Article
Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1757, doi. 10.1002/pssb.200983560
- By:
- Publication type:
- Article
Effect of magnetic field on the corrosion of iron and St20 steel as studied by positron annihilation.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1822, doi. 10.1002/pssb.200945124
- By:
- Publication type:
- Article
Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1675, doi. 10.1002/pssb.200983674
- By:
- Publication type:
- Article