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Unconventional Magnetic Behaviour of TbB12 at Low Temperature.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. R13, doi. 10.1002/1521-3951(200212)234:3<R13::AID-PSSB999913>3.0.CO;2-O
By:
- Murasik, A.;
- Czopnik, A.;
- Keller, L.;
- Zolliker, M.;
- Shitsevalova, N.;
- Paderno, Y.
Publication type:
Article
Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 911, doi. 10.1002/1521-3951(200212)234:3<911::AID-PSSB911>3.0.CO;2-O
By:
- Haboeck, U.;
- Kaschner, A.;
- Hoffmann, A.;
- Thomsen, C.;
- Riemann, T.;
- Krtschil, A.;
- Christen, J.;
- Krost, A.;
- Seyboth, M.;
- Habel, F.
Publication type:
Article
Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 830, doi. 10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O
By:
- Van Daele, B.;
- Van Tendeloo, G.;
- Germain, M.;
- Leys, M.;
- Bougrioua, Z.;
- Moerman, I.
Publication type:
Article
Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 801, doi. 10.1002/1521-3951(200212)234:3<801::AID-PSSB801>3.0.CO;2-W
By:
- Miyajima, T.;
- Kudo, Y.;
- Liu, K.-L.;
- Uruga, T.;
- Honma, T.;
- Saito, Y.;
- Hori, M.;
- Nanishi, Y.;
- Kobayashi, T.;
- Hirata, S.
Publication type:
Article
Optical Properties of RF-MBE Grown AlGaAsN.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 915, doi. 10.1002/1521-3951(200212)234:3<915::AID-PSSB915>3.0.CO;2-8
By:
- Yamamoto, K.;
- Uchida, M.;
- Yamamoto, A.;
- Masuda, A.;
- Hashimoto, A.
Publication type:
Article
Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 892, doi. 10.1002/1521-3951(200212)234:3<892::AID-PSSB892>3.0.CO;2-T
By:
- Paskov, P.P.;
- Darakchieva, V.;
- Paskova, T.;
- Holtz, P.O.;
- Monemar, B.
Publication type:
Article
Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 805, doi. 10.1002/1521-3951(200212)234:3<805::AID-PSSB805>3.0.CO;2-G
By:
- Link, A.;
- Graf, T.;
- Ambacher, O.;
- Jimenez, A.;
- Calleja, E.;
- Smorchkova, Y.;
- Speck, J.;
- Mishra, U.;
- Stutzmann, M.
Publication type:
Article
Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 919, doi. 10.1002/1521-3951(200212)234:3<919::AID-PSSB919>3.0.CO;2-T
By:
- Shubina, T.V.;
- Jmerik, V.N.;
- Tkachman, M.G.;
- Vekshin, V.A.;
- Ratnikov, V.V.;
- Toropov, A.A.;
- Sitnikova, A.A.;
- Ivanov, S.V.;
- Bergman, J.P.;
- Karlsson, F.;
- Holtz, P.;
- Monemar, B.
Publication type:
Article
Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1-xN with High Al Content.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 845, doi. 10.1002/1521-3951(200212)234:3<845::AID-PSSB845>3.0.CO;2-0
By:
- Taniyasu, Y.;
- Kasu, M.;
- Kobayashi, N.
Publication type:
Article
Quantitative Analysis of Absorption and Field-Induced Absorption Changes in InGaN/GaN Quantum Wells.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 742, doi. 10.1002/1521-3951(200212)234:3<742::AID-PSSB742>3.0.CO;2-G
By:
- Kiesel, P.;
- Renner, F.;
- Kneissl, M.;
- de Walle, C.G.Van;
- Döhler, G. H.;
- Johnson, N. M.
Publication type:
Article
Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 782, doi. 10.1002/1521-3951(200212)234:3<782::AID-PSSB782>3.0.CO;2-0
By:
- Sanorpim, S.;
- Nakajima, F.;
- Imura, S.;
- Katayama, R.;
- Wu, J.;
- Onabe, K.;
- Shiraki, Y.
Publication type:
Article
Migration of Dislocations in Strained GaN Heteroepitaxial Layers.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 952, doi. 10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4
By:
- Sahonta, S.-L.;
- Baines, M.Q.;
- Cherns, D.;
- Amano, H.;
- Ponce, F.A.
Publication type:
Article
Interfacial Elasticity Corrections to Size-Dependent Strain-State of Embedded Quantum Dots.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. R10, doi. 10.1002/1521-3951(200212)234:3<R10::AID-PSSB999910>3.0.CO;2-5
By:
- Sharma, P.;
- Ganti, S.
Publication type:
Article
Optical Phonons in Hexagonal Al xIn yGa1- x- yN ( y ≈ 0.12).
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 970, doi. 10.1002/1521-3951(200212)234:3<970::AID-PSSB970>3.0.CO;2-4
By:
- Kasic, A.;
- Schubert, M.;
- Off, J.;
- Scholz, F.;
- Einfeldt, S.;
- Hommel, D.
Publication type:
Article
Coupled Free-Carrier and Exciton Dynamics in Bulk Wurtzite GaN.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 901, doi. 10.1002/1521-3951(200212)234:3<901::AID-PSSB901>3.0.CO;2-S
By:
- Compagnone, F.;
- Kokolakis, G.;
- Di Carlo, A.;
- Lugli, P.
Publication type:
Article
Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 947, doi. 10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P
By:
- Potin, V.;
- Rosenauer, A.;
- Gerthsen, D.;
- Kuhn, B.;
- Scholz, F.
Publication type:
Article
Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 713, doi. 10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O
By:
- Goldhahn, R.;
- Buchheim, C.;
- Shokhovets, S.;
- Gobsch, G.;
- Ambacher, O.;
- Link, A.;
- Hermann, M.;
- Stutzmann, M.;
- Smorchkova, Y.;
- Mishra, U.K.;
- Speck, J.S.
Publication type:
Article
Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 764, doi. 10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0
By:
- Teisseyre, H.;
- Suski, T.;
- Łepkowski, S.P.;
- Anceau, S.;
- Perlin, P.;
- Lefebvre, P.;
- Kończewicz, L.;
- Hirayama, H.;
- Aoyagi, Y.
Publication type:
Article
Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1-xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001).
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 746, doi. 10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0
By:
- Chichibu, SF.;
- Onuma, T.;
- Kitamura, T.;
- Sota, T.;
- DenBaars, S.P.;
- Nakamura, S.;
- Okumura, H.
Publication type:
Article
AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 717, doi. 10.1002/1521-3951(200212)234:3<717::AID-PSSB717>3.0.CO;2-8
By:
- Ristić, J.;
- Sánchez-García, M.A.;
- Ulloa, J.M.;
- Calleja, E.;
- Sanchez-Páramo, J.;
- Calleja, J.M.;
- Jahn, U.;
- Trampert, A.;
- Ploog, K.H.
Publication type:
Article
Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 961, doi. 10.1002/1521-3951(200212)234:3<961::AID-PSSB961>3.0.CO;2-4
By:
- Waki, I.;
- Kumtornkittikul, C.;
- Sato, K.;
- Shimogaki, Y.;
- Nakano, Y.
Publication type:
Article
Temperature Dependence of the Minority-Carrier Mobility-Lifetime Product for Probing Band-Tail States in Microcrystalline Silicon.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. R16, doi. 10.1002/1521-3951(200212)234:3<R16::AID-PSSB999916>3.0.CO;2-6
By:
- Brüggemann, R.;
- Kunz, O.
Publication type:
Article
Microstructural Investigation and Magnetic Properties of p-type GaN Implanted with Mn+ Ions.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 943, doi. 10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4
By:
- Baik, J.M.;
- Kim, J.K.;
- Jang, H.W.;
- Shon, Y.;
- Kang, T.W.;
- Lee, J.-L.
Publication type:
Article
Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPE.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 840, doi. 10.1002/1521-3951(200212)234:3<840::AID-PSSB840>3.0.CO;2-K
By:
- Sanorpim, S.;
- Takuma, E.;
- Katayama, R.;
- Onabe, K.;
- Ichinose, H.;
- Shiraki, Y.
Publication type:
Article
Electronic and Phonon Deformation Potentials of GaN and AlN: Ab initio Calculations versus Experiment.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 965, doi. 10.1002/1521-3951(200212)234:3<965::AID-PSSB965>3.0.CO;2-P
By:
- Wagner, J.-M.;
- Bechstedt, F.
Publication type:
Article
GaN/AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN Template.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 822, doi. 10.1002/1521-3951(200212)234:3<822::AID-PSSB822>3.0.CO;2-K
By:
- Tang, H.;
- Webb, J.B.;
- Rolfe, S.;
- Bardwell, J.A.;
- Tomka, D.;
- Coleridge, P.;
- Ko, C.H.;
- Su, Y.K.;
- Chang, S.J.
Publication type:
Article
Growth of AlxGa1-xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 855, doi. 10.1002/1521-3951(200212)234:3<855::AID-PSSB855>3.0.CO;2-X
By:
- Konishi, M.;
- Tanabe, T.;
- Kubo, S.;
- Kurai, S.;
- Taguchi, T.;
- Kainosho, K.;
- Yokohata, A.
Publication type:
Article
Exciton Confinement in GaN/AlGaN Quantum Wells Enhanced by Non-Abrupt Interfaces.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 730, doi. 10.1002/1521-3951(200212)234:3<730::AID-PSSB730>3.0.CO;2-S
By:
- Caetano, E.W.S.;
- Freire, V.N.;
- Farias, G.A.
Publication type:
Article
In-Redistribution in a GaInN Quantum Well upon Thermal Annealing.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 738, doi. 10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X
By:
- Hahn, E.;
- Rosenauer, A.;
- Gerthsen, D.;
- Off, J.;
- Perez-Solorzano, V.;
- Jetter, M.;
- Scholz, F.
Publication type:
Article
Fast and Ultrafast Processes in AlGaN/GaN Channels.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 826, doi. 10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4
By:
- Matulionis, A.;
- Liberis, J.;
- Ardaravičius, L.;
- Ramonas, M.;
- Zubkutė, T.;
- Matulionienė, I.;
- Eastman, L.F.;
- Shealy, J.R.;
- Smart, J.;
- Pavlidis, D.;
- Hubbard, S.
Publication type:
Article
Photoconductivity and Electroreflectance Study of Cubic GaN/GaAs(001) Heterostructures by Optical-Biasing Technique.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 877, doi. 10.1002/1521-3951(200212)234:3<877::AID-PSSB877>3.0.CO;2-H
By:
- Katayama, R.;
- Kuroda, M.;
- Onabe, K.;
- Shiraki, Y.
Publication type:
Article
Modulation of Surface Barrier in AlGaN/GaN Heterostructures.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 734, doi. 10.1002/1521-3951(200212)234:3<734::AID-PSSB734>3.0.CO;2-C
By:
- Koley, G.;
- Cha, Ho-Young;
- Tilak, V.;
- Eastman, L.F.;
- Spencer, M.G.
Publication type:
Article
Electrical Properties of SiO2/n-GaN Metal-Insulator-Semiconductor Structures.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 859, doi. 10.1002/1521-3951(200212)234:3<859::AID-PSSB859>3.0.CO;2-H
By:
- Nakano, Y.;
- Jimbo, T.
Publication type:
Article
Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 796, doi. 10.1002/1521-3951(200212)234:3<796::AID-PSSB796>3.0.CO;2-H
By:
- Saito, Y.;
- Harima, H.;
- Kurimoto, E.;
- Yamaguchi, T.;
- Teraguchi, N.;
- Suzuki, A.;
- Araki, T.;
- Nanishi, Y.
Publication type:
Article
Phase Separation, Gap Bowing, and Structural Properties of Cubic InxAl1-xN.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 956, doi. 10.1002/1521-3951(200212)234:3<956::AID-PSSB956>3.0.CO;2-P
By:
- Teles, L.K.;
- Scolfaro, L. M. R.;
- Furthmüller, J.;
- Bechstedt, F.;
- Leite, J. R.
Publication type:
Article
Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 778, doi. 10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H
By:
- Taliercio, T.;
- Gil, B.;
- Lefebvre, P.;
- Pinault, M.-A.;
- Tournié, E.
Publication type:
Article
Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. R7, doi. 10.1002/1521-3951(200212)234:3<R7::AID-PSSB99997>3.0.CO;2-D
By:
- Zeuner, A.;
- Alves, H.;
- Hofmann, D.M.;
- Meyer, B.K.;
- Hoffmann, A.;
- Haboeck, U.;
- Strassburg, M.;
- Dworzak, M.
Publication type:
Article
Controlling the Morphology of GaN Layers Grown on AlN in Ga Self-Surfactant Conditions: from Quantum Wells to Quantum Dots.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 931, doi. 10.1002/1521-3951(200212)234:3<931::AID-PSSB931>3.0.CO;2-G
By:
- Adelmann, C.;
- Daudin, B.;
- Monroy, E.;
- Sarigiannidou, E.;
- Rouvière, J.L.;
- Hori, Y.;
- Brault, J.;
- Gogneau, N.;
- Fanget, S.;
- Bru-Chevallier, C.
Publication type:
Article
Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 810, doi. 10.1002/1521-3951(200212)234:3<810::AID-PSSB810>3.0.CO;2-W
By:
- Wraback, M.;
- Shen, H.;
- Rudin, S.;
- Bellotti, E.
Publication type:
Article
Electron Holography Studies of the Charge on Dislocations in GaN.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 924, doi. 10.1002/1521-3951(200212)234:3<924::AID-PSSB924>3.0.CO;2-8
By:
- Cherns, D.;
- Jiao, C.G.;
- Mokhtari, H.;
- Cai, J.;
- Ponce, F.A.
Publication type:
Article
Mg Incorporation in AlGaN Layers Grown on Grooved Sapphire Substrates.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 850, doi. 10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G
By:
- Cherns, D.;
- Baines, M.Q.;
- Wang, Y.Q.;
- Liu, R.;
- Ponce, F.A.;
- Amano, H.;
- Akasaki, I.
Publication type:
Article
Origin of Inversion Domains in GaN/AlN/Si(111) Heterostructures Grown by Molecular Beam Epitaxy.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 935, doi. 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0
By:
- Sanchez, A.M.;
- Ruterana, P.;
- Molina, S.I.;
- Pacheco, F.J.;
- Garcia, R.
Publication type:
Article
Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/Al xGa1- xN Superlattices.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 975, doi. 10.1002/1521-3951(200212)234:3<975::AID-PSSB975>3.0.CO;2-L
By:
- Davydov, V.Yu.;
- Smirnov, A.N.;
- Goncharuk, I.N.;
- Kyutt, R.N.;
- Scheglov, M.P.;
- Baidakova, M.V.;
- Lundin, W.V.;
- Zavarin, E.E.;
- Smirnov, M.B.;
- Karpov, S.V.;
- Harima, H.
Publication type:
Article
k · p Calculations of Electronic and Optical Properties of p-doped (001) AlGaN/GaN Thin Superlattices.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 906, doi. 10.1002/1521-3951(200212)234:3<906::AID-PSSB906>3.0.CO;2-8
By:
- Rodrigues, S.C.P.;
- Scolfaro, L.M.R.;
- Sipahi, G.M.;
- Noriega, O.C.;
- Leite, J.R.
Publication type:
Article
Hall Effect Data Analysis of GaN n+n Structures.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 872, doi. 10.1002/1521-3951(200212)234:3<872::AID-PSSB872>3.0.CO;2-0
By:
- Arnaudov, B.;
- Paskova, T.;
- Evtimova, S.;
- Heuken, M.;
- Monemar, B.
Publication type:
Article
Papers presented at the International Workshop on Nitride Semiconductors (IWN 2002).
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 711, doi. 10.1002/1521-3951(200212)234:3<711::AID-PSSB711>3.0.CO;2-W
By:
- Hoffmann, Axel;
- Rizzi, Angela
Publication type:
Article
Lateral Arrangement of Self-Assembled GaN Islands on Periodically Stepped AlN Surfaces.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 939, doi. 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L
By:
- Brault, J.;
- Tanaka, S.;
- Sarigiannidou, E.;
- Nakagawa, H.;
- Rouvière, J.-L.;
- Feuillet, G.;
- Daudin, B.
Publication type:
Article
Spontaneous Superlattice Formation in AlGaN Layers Grown by MOCVD on Si(111)-Substrates.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 722, doi. 10.1002/1521-3951(200212)234:3<722::AID-PSSB722>3.0.CO;2-O
By:
- Strittmatter, A.;
- Reissmann, L.;
- Bimberg, D.;
- Veit, P.;
- Krost, A.
Publication type:
Article
Surface Potential at as-Grown GaN(0001) MBE Layers.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 773, doi. 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO;2-0
By:
- Kočan, M.;
- Rizzi, A.;
- Lüth, H.;
- Keller, S.;
- Mishra, U.K.
Publication type:
Article
Optical Characterization of AlxGa1-xN Alloys (x < 0.7) Grown on Sapphire or Silicon.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 887, doi. 10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D
By:
- Leroux, M.;
- Dalmasso, S.;
- Natali, F.;
- Helin, S.;
- Touzi, C.;
- Laügt, S.;
- Passerel, M.;
- Omnes, F.;
- Semond, F.;
- Massies, J.;
- Gibart, P.
Publication type:
Article

Found: 62