Works matching IS 03615235 AND DT 2023 AND VI 52 AND IP 11
Results: 75
Experimental Investigation of Semiconductor Barriers Exposed to Variable Strong Electric Field at Vacuum Conditions.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7807, doi. 10.1007/s11664-023-10716-z
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Rule-22: An Update to Rule-07.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7095, doi. 10.1007/s11664-023-10715-0
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Arc Erosion Behavior of Cu/Ti<sub>3</sub>SiC<sub>2</sub> Cathodes in c-C<sub>4</sub>F<sub>8</sub> Gas as a Substitute for SF<sub>6</sub> Gas.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7818, doi. 10.1007/s11664-023-10702-5
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Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7103, doi. 10.1007/s11664-023-10701-6
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Thermodynamic Assessment of the Fe-Cr-B Ternary System and the Fe-Nd-B-Cr Quaternary System in the Fe-Rich Corner.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7785, doi. 10.1007/s11664-023-10699-x
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Influence of Alkaline Earth Metals on the Optical Properties and Radiation-Shielding Effectiveness of Sm<sup>3+</sup>-Doped Zinc Borophosphate Glasses.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7794, doi. 10.1007/s11664-023-10698-y
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Doping Induced Transition from Space-Charge-Limited to Ohmic Conduction in P3HT-PMMA.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7645, doi. 10.1007/s11664-023-10697-z
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Performance Analysis of MoTe<sub>2</sub>/MoSe<sub>2</sub> and MoTe<sub>2</sub>/WSe<sub>2</sub> Heterostructure Double-Gate MOSFET.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7694, doi. 10.1007/s11664-023-10696-0
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Electromagnetic Properties of Ni<sub>x</sub>Zn<sub>1−x</sub>Fe<sub>2</sub>O<sub>4</sub>/Diatomite Composites.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7667, doi. 10.1007/s11664-023-10695-1
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Gigahertz Low-Loss Surface Acoustic Wave Devices Based on ScAlN/Si Structures.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7763, doi. 10.1007/s11664-023-10694-2
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Highly Selective Welding of Ultralong Silver Nanowire Transparent Conductive Electrodes by Electroplating.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7676, doi. 10.1007/s11664-023-10693-3
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Study on High-Efficiency Double Perovskite/Silicon Heterojunction Tandem Cells with Sb-Doped Cs<sub>2</sub>AgBiBr<sub>6</sub>.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7728, doi. 10.1007/s11664-023-10692-4
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Crystal Structure and Photocatalytic Properties of Bismuth-Doped Lanthanum Ferrite.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7652, doi. 10.1007/s11664-023-10691-5
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Augmenting the Insulating and Heat Transfer Properties of Silicone Oil with Filler Composite GO-CuO Nanoparticles for Transformer Applications.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7683, doi. 10.1007/s11664-023-10690-6
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Study of the Rapid Determination of Phosphorus in Electronic Packaging Material by Phosphorus-Molybdenum Yellow Spectrophotometry.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7590, doi. 10.1007/s11664-023-10689-z
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Fe Doping-Induced Magnetic Solitons in CrNb<sub>3</sub>S<sub>6</sub>.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7614, doi. 10.1007/s11664-023-10688-0
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Influence of High-Dose 80 MeV Proton Irradiation on the Electronic Structure and Photoluminescence of β-Ga<sub>2</sub>O<sub>3</sub>.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7718, doi. 10.1007/s11664-023-10687-1
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Exploring the Synergistic Effect of a PANI/Cr<sub>2</sub>O<sub>3</sub>/Graphene Nanocomposite in a Hybrid Gel Electrolyte for Supercapacitor Performance.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7576, doi. 10.1007/s11664-023-10686-2
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Impact of Cooling Rate and Nickel Addition on the Dendritic Spacing, Ag<sub>3</sub>Sn Morphology and Cytotoxicity of Sn-2Ag Solder.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7740, doi. 10.1007/s11664-023-10685-3
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Modeling of Highly Efficient Lead-Free MASnI<sub>3</sub>-Based Solar Cell with Graphene Oxide as Hole Transport Layer Using SCAPS-1D.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7541, doi. 10.1007/s11664-023-10684-4
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Flexible and Highly Stable Textile-Based Symmetric Supercapacitor Comprising Binder-Free MnO<sub>2</sub>/rGO-CF Nanocomposite Electrodes.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7447, doi. 10.1007/s11664-023-10683-5
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Dispersive Dielectric Behaviour of Ternary 0.49BiFeO<sub>3</sub>-0.20Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.31PbTiO<sub>3</sub> (BF-PMN-PT) Ceramic Near Morphotropic Phase Boundary Using a Modified Debye Model.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7596, doi. 10.1007/s11664-023-10682-6
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SCAPS-1D Device Simulation of Highly Efficient Perovskite Solar Cells Using Diverse Charge Transport Layers.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7623, doi. 10.1007/s11664-023-10681-7
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Impact of Back-Gate Radiation on Single-Event Effects of Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-Insulator MOSFETs.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7496, doi. 10.1007/s11664-023-10680-8
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Study of Zirconium-Based Conversion Coating on Aluminum Counter Electrodes of Dye-Sensitized Solar Cells for Anti-corrosion Resistance and Morphology.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7484, doi. 10.1007/s11664-023-10678-2
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Will Better Sintering Quality of Ag Nanoparticles Lead to More Reliable Ag Bonding Interfaces?
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7475, doi. 10.1007/s11664-023-10677-3
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Effect of Co-Doping in FeWO<sub>4</sub> as Anode for Lithium-Ion Battery.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7114, doi. 10.1007/s11664-023-10676-4
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XRD, Dielectric, Raman and Mössbauer Spectroscopy Studies of a Bi<sub>1−x</sub>Ba<sub>x</sub>Fe<sub>1−x</sub>(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>x</sub>O<sub>3</sub> System Prepared by the Solid-State Reaction.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7416, doi. 10.1007/s11664-023-10675-5
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Enhancement of Hole Extraction in Carbon-Based Organic–Inorganic Hybrid Perovskite Solar Cells Using MAPbI<sub>3</sub>:NiO-NPs Composite.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7459, doi. 10.1007/s11664-023-10674-6
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Effects of Substrate Bias Voltage on Structural and Optical Properties of Co-Sputtered (Al<sub>x</sub>Ga<sub>1–x</sub>)<sub>2</sub>O<sub>3</sub> Films.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7429, doi. 10.1007/s11664-023-10673-7
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RF/MW Transmission Improvement in Energy Efficient Buildings Using FSS and Its Impact on Thermal Efficiency of Energy-Saving Glass.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7525, doi. 10.1007/s11664-023-10672-8
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Passivation of InSb and HgCdTe Infrared Photodiodes by Polycrystalline CdTe.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7337, doi. 10.1007/s11664-023-10671-9
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Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7554, doi. 10.1007/s11664-023-10670-w
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Multifunctional Monitoring System Based on BaTiO<sub>3</sub>@CMC Aerogel-Based Triboelectric Nanogenerator.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7124, doi. 10.1007/s11664-023-10669-3
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Regulation of the Temperature Field and Evolution of the Melt Convection Field During InP Crystal Growth with the Vertical Gradient Freeze Method.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7346, doi. 10.1007/s11664-023-10668-4
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Effect of Sn Doping on the Curie Temperature, Structural, Dielectric and Piezoelectric Properties of Ba<sub>0.8</sub>Sr<sub>0.2</sub>Ti<sub>1−x</sub>Sn<sub>x</sub>O<sub>3</sub> Ceramics.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7406, doi. 10.1007/s11664-023-10667-5
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Sb Additions in Near-Eutectic Sn-Bi Solder Decrease Planar Slip.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7365, doi. 10.1007/s11664-023-10666-6
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Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7068, doi. 10.1007/s11664-023-10665-7
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A Low-Temperature Firing and Low-Loss SrBi<sub>2</sub>TeO<sub>7</sub> Microwave Dielectric Ceramic for LTCC Applications.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7438, doi. 10.1007/s11664-023-10664-8
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Fabrication and Enhanced n-Butanol Gas-Sensing Performance of Au-modified SnO<sub>2</sub>/ZnO Nanoflowers.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7315, doi. 10.1007/s11664-023-10663-9
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N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7566, doi. 10.1007/s11664-023-10662-w
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Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7089, doi. 10.1007/s11664-023-10661-x
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Finite Element Simulation of Sn-Ag-Cu Solder Joint Reliability Under Thermoelectric Coupling.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7512, doi. 10.1007/s11664-023-10660-y
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Synthesis, Oxygen Evolution Reaction, and Dye Degradation Application of Tb<sub>2</sub>Se<sub>3</sub> and InTbSe<sub>3</sub> Nanostructures.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7393, doi. 10.1007/s11664-023-10659-5
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Dual-Mode Photoluminescence of Er<sup>3+</sup> -Doped Ta<sub>2</sub>O<sub>5</sub> Coatings Formed by Plasma Electrolytic Oxidation of Tantalum.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7384, doi. 10.1007/s11664-023-10658-6
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Polyacrylonitrile-Derived Nitrogen-Doped Carbon Nanoparticles Decorated with Fe<sub>3</sub>C for Wide-Band Microwave Dissipation.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7371, doi. 10.1007/s11664-023-10657-7
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Low-Temperature Die Attachment by Pressureless Cu Sintering for Semiconductor Packaging.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7607, doi. 10.1007/s11664-023-10656-8
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Modulation Transfer Function Measurements by Electron-Beam-Induced Current of HgCdTe Planar Diode with Small Pitch and High Operating Temperature.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7081, doi. 10.1007/s11664-023-10655-9
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Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7060, doi. 10.1007/s11664-023-10654-w
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DLTS Study of Defects in HgCdTe Heterostructure Photodiode.
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- Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7074, doi. 10.1007/s11664-023-10653-x
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