Works matching IS 03615235 AND DT 2021 AND VI 50 AND IP 4
Results: 100
Comparison of Ferroelectric Photovoltaic Performance in BFO/BTO Multilayer Thin Film Structure Fabricated Using CSD & PLD Techniques.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1835, doi. 10.1007/s11664-021-08793-z
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Hexagonal Sodium Lutetium Fluoride Microstructures: Facile and Large-Scale Synthesis, Growth Mechanism and Multicolour Emissions.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1949, doi. 10.1007/s11664-021-08789-9
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Chemiresistive Gas Sensing Properties of Copper Substituted Zinc Ferrite Thin Films Deposited by Spray Pyrolysis.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2460, doi. 10.1007/s11664-021-08783-1
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Room Temperature Ferromagnetism: Nonmagnetic Semiconductor Oxides and Nonmagnetic Dopants.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1922, doi. 10.1007/s11664-021-08777-z
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Comparative Study on Backlighting Unit Using CsPbBr3 Nanocrystals/KSFM Phosphor + Blue LED and Commercial WLED in Liquid Crystal Display.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1827, doi. 10.1007/s11664-021-08775-1
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First-Principles Calculations on Thermoelectric Properties of Layered Transition Metal Phosphides MP2 (M = Ni, Pd, Pt).
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2510, doi. 10.1007/s11664-021-08774-2
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Nano-structured CuO on Silicon Using a Chemical Bath Deposition Process and Sputter Seed Layer.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1779, doi. 10.1007/s11664-021-08772-4
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Effect of Surface State on DC Breakdown Characteristics of Thermally Aged Double-Layered Polyester Films.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2400, doi. 10.1007/s11664-021-08771-5
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Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2313, doi. 10.1007/s11664-021-08768-0
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Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2496, doi. 10.1007/s11664-021-08766-2
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Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2466, doi. 10.1007/s11664-021-08764-4
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Fabrication and Characterization of Ni-, Co-, and Rb-Incorporated CH3NH3PbI3 Perovskite Solar Cells.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1980, doi. 10.1007/s11664-021-08759-1
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Magnetic and Mechanical Properties of Iron-Based Soft Magnetic Composites Coated with Silane Synergized by Bi2O3.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2425, doi. 10.1007/s11664-021-08758-2
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Li6NiNb2O9 Compound with Rock-Salt Crystal Structure and Its Microwave Dielectric Properties.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2476, doi. 10.1007/s11664-021-08757-3
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An Innovative Model for Electronic Band Structure Analysis of Doped and Un-Doped ZnO.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2417, doi. 10.1007/s11664-021-08756-4
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Influence of Temperature and Thickness on the Thermoelectric Power of Nanocrystalline Na-DDQ Thin Film and Its Diode Application.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2365, doi. 10.1007/s11664-021-08755-5
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The Electrochemical Performance of Si/C Composites with Different Silicon Amounts As Lithium Anode Material.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2232, doi. 10.1007/s11664-021-08754-6
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Investigation of DC, RF and Linearity Performances of III–V Semiconductor-Based Electrically Doped TFET for Mixed Signal Applications.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2348, doi. 10.1007/s11664-021-08753-7
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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2323, doi. 10.1007/s11664-021-08752-8
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Band Structures Transformation in Two-Faced Janus Monolayer SnXY(X, Y = O, S, Se, and Te).
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2504, doi. 10.1007/s11664-021-08750-w
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Structural, Morphological and Sensor Properties of the Fractal-Percolation Nanosystem ZnO/NiO.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2268, doi. 10.1007/s11664-021-08749-3
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Influence of Joint Arrangement on the Fracture Behavior of Lead-Free Solder Joints.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2117, doi. 10.1007/s11664-021-08748-4
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Improving Thermal Effects and Reduction of Self-heating Phenomenon in AlGaN/GaN/Si Based HEMT.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2295, doi. 10.1007/s11664-021-08747-5
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Magnetic Properties of Iron-Based Alloy Powder Coils Prepared with Screen Printing Using High-Solid-Content Magnetic Pastes.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2331, doi. 10.1007/s11664-021-08746-6
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Assessment of Structural Stability of Pure and Xylenol Orange Dye Doped Potassium Dihydroegn Phosphate Probed by Shock Waves.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2436, doi. 10.1007/s11664-021-08745-7
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High Room-Temperature Thermoelectric Performance of Honeycomb GaN Monolayer.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2454, doi. 10.1007/s11664-021-08744-8
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First-Principles Study of Electronic Properties of SnO2/CsPbI2Br Interface.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2129, doi. 10.1007/s11664-021-08743-9
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Liquid-Exfoliated Molybdenum Telluride Nanosheets for High-Performance Supercapacitors.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2277, doi. 10.1007/s11664-021-08742-w
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Electrochemical Synthesis of Covalently Bonded Poly (3, 4-dioxyethylthiophene)–Carbon Nanotubes Composite with Enhanced Electrochromic Properties.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2389, doi. 10.1007/s11664-021-08741-x
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Tuned Transport Behavior of the IPA-Treated PEDOT:PSS Flexible Temperature Sensor via Screen Printing.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2356, doi. 10.1007/s11664-021-08740-y
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Algorithmic Approach of Electrically Doped Single-walled Cytosine Nanotube-based Biomolecular Logic Gate: A First Principle Paradigm.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2254, doi. 10.1007/s11664-021-08739-5
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Innovative Organic MEH-PPV Heterojunction Device Made by USP and PVD.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2287, doi. 10.1007/s11664-021-08738-6
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Nickel Doping Effects on the Structural and Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Perovskite Ceramics.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2223, doi. 10.1007/s11664-021-08737-7
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Cool White Light Emission from LaPO4@LaPO4:Dy3+ (5%) Nanocomposite for White LEDs.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2206, doi. 10.1007/s11664-021-08736-8
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Effects of Hydrothermal Temperature on the Photocatalytic Degradation Performance of Bismuth Oxide Formate.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2444, doi. 10.1007/s11664-021-08735-9
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In Situ Fabrication of CdS/ZnTe Heterojunction Diodes by Pulsed Laser Deposition.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2305, doi. 10.1007/s11664-021-08734-w
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Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2521, doi. 10.1007/s11664-020-08733-3
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Paracetamol-Assisted Self-Assembled ZnO Porous Microstructures for Enhanced CO2 Detection.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2057, doi. 10.1007/s11664-020-08732-4
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Optical Transmittance Improvements of Al2O3/TiO2 Multilayer OLED Encapsulation Films Processed by Atomic Layer Deposition.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2015, doi. 10.1007/s11664-020-08731-5
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Tunable Luminescence of Ce3+-Doped Calcium Boroaluminate Glasses for Light Emitting Devices.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2378, doi. 10.1007/s11664-020-08730-6
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Synthesis, Characterization and Luminescent Properties of Mixed-Ligand Nickel Complexes for Opto-Electronic Application.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2090, doi. 10.1007/s11664-020-08728-0
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Effects of Dy2O3 on the Electrical Properties of a (Nb2O5-Dy2O3-SiO2) Co-doped TiO2 Varistor.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1963, doi. 10.1007/s11664-020-08727-1
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Surface Morphology and Sputtering Mechanism of Etched Areas of a Metallic Target by Magnetron Sputtering.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2409, doi. 10.1007/s11664-020-08726-2
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High-Quality β-Ga2O3 Films with Influence of Growth Temperature by Pulsed Laser Deposition for Solar-Blind Photodetectors.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2043, doi. 10.1007/s11664-020-08725-3
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Carbon-based Multi-layered Films for Electronic Application: A Review.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1845, doi. 10.1007/s11664-020-08724-4
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Ethylenediaminetetra Acetic Acid Functionalized Polyaniline Nanowires: Organic Field Effect Transistor for the Detection of Hg2+.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2339, doi. 10.1007/s11664-020-08723-5
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Comparison from Simulated Al0.3Ga0.7As/GaAs/Ge and Al0.3Ga0.7As/GaAs/Si/Ge to Experimental InGaP/GaAs/InGaNAsSb/Ge for Optimized Utilization of the Solar Spectrum.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2005, doi. 10.1007/s11664-020-08722-6
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Structural and Electronic Calculations of CdTe Using DFT: Exchange–Correlation Functionals and DFT-1/2 Corrections.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2216, doi. 10.1007/s11664-020-08720-8
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Lightweight MXene/Cellulose Nanofiber Composite Film for Electromagnetic Interference Shielding.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2101, doi. 10.1007/s11664-020-08718-2
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Phase Selectivity of Copper Sulfide: Synthesis and Application.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2034, doi. 10.1007/s11664-020-08717-3
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