Works matching IS 03615235 AND DT 2020 AND VI 49 AND IP 7
Results: 45
Optical, Electrical and Photoresponsive Properties of Cu2NiSnS4 Solar Detectors.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4457, doi. 10.1007/s11664-020-08197-5
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Silicone Resin-Based Composite Materials for High Thermal Stability and Thermal Conductivity.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4379, doi. 10.1007/s11664-020-08194-8
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Electronic and Transport Properties of Sn-Doped Sb2Te3: A Hybrid Functional Study.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4372, doi. 10.1007/s11664-020-08184-w
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Magnetically Separable CdO–TiO2–CuO Ternary Nanocomposite Photocatalyst for Effective Degradation of RhB under Visible-Light Irradiation.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4418, doi. 10.1007/s11664-020-08183-x
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Structural, Piezoelectric and Dielectric Properties of K0.4Na0.6NbO3-Bi0.5Li0.5ZrO3-CaZrO3 Ternary Lead-Free Piezoelectric Ceramics.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4364, doi. 10.1007/s11664-020-08174-y
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Physio-Chemical Properties and Dielectric Behavior of As-Grown Manganese Oxide (γ-Mn2O3) Nanoparticles.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4410, doi. 10.1007/s11664-020-08171-1
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Crack-and-Fold Style Defects in CVD Graphene on Raw Cu Foils.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4403, doi. 10.1007/s11664-020-08168-w
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Cathode Performance Study of La0.6Sr0.4Co0.8Fe0.2O3-δ with Various Electrolyte-Doped Ceria Ce0.8Sm0.17Ln0.03O1.9 for IT-Solid Oxide Fuel Cell.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4123, doi. 10.1007/s11664-020-08167-x
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SOI Schottky Barrier Nanowire MOSFET with Reduced Ambipolarity and Enhanced Electrostatic Integrity.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4450, doi. 10.1007/s11664-020-08164-0
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Thermal Stress Analysis of a Segmented Thermoelectric Generator under a Pulsed Heat Source.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4392, doi. 10.1007/s11664-020-08163-1
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Dielectric Relaxation and Alternating-Current Conductivity of Highly Crystalline Poly (ethylene-2,6-naphthalenedicarboxylate) Films.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4069, doi. 10.1007/s11664-020-08161-3
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Structural, Optical, Ferroelectric and Ferromagnetic Properties of Bi1−xGdxFeO3 Materials.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4443, doi. 10.1007/s11664-020-08158-y
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Correction to: Influence of Substrate Surface Finish Metallurgy on Lead-Free Solder Joint Microstructure with Implications for Board-Level Reliability.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4466, doi. 10.1007/s11664-020-08156-0
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Enhancing the High-Temperature Thermoelectric Performance of Li(CoNi)O2 by Replacement of Ni with Earth-Abundant Mg.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4324, doi. 10.1007/s11664-020-08155-1
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Effect of Dye Extraction Solvent on the Photovoltaic Performance of Tecoma stans-Sensitized Solar Cells.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4355, doi. 10.1007/s11664-020-08154-2
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A Comprehensive Study on X-Type Thermoelectric Generator Modules.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4343, doi. 10.1007/s11664-020-08152-4
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Comparative Analysis of the Effects of Trap Charges on Single- and Double-Gate Extended-Source Tunnel FET with δp+ SiGe Pocket Layer.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4333, doi. 10.1007/s11664-020-08151-5
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Understanding Phase Segregation Using Rietveld Analysis and the Dielectric, Ferroelectric Properties of Ba(1−x)CaxTiO3 Solid Solutions.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4111, doi. 10.1007/s11664-020-08150-6
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Effect of Bonding Time on Microstructure and Shear Property of Cu/In-50Ag/Cu TLP Solder Joints.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4300, doi. 10.1007/s11664-020-08149-z
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Backside Metallization of Ag–Sn–Ag Multilayer Thin Films and Die Attach for Semiconductor Applications.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4265, doi. 10.1007/s11664-020-08148-0
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Electromigration Behavior of Low-Silver Sn-0.3Ag-0.7Cu-1.6Bi-0.2In Solder Joints.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4237, doi. 10.1007/s11664-020-08147-1
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Diffusion Barrier Behaviors of V-Ta, V-Ta-N and V-Ta/V-Ta-N Alloy Films in Cu Interconnects.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4231, doi. 10.1007/s11664-020-08146-2
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Low-Power Efficient p+ Si0.7Ge0.3 Pocket Junctionless SGTFET with Varying Operating Conditions.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4291, doi. 10.1007/s11664-020-08145-3
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Role of Morphology of Surfactant-Free Nanoparticles in Organic Photovoltaics.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4168, doi. 10.1007/s11664-020-08144-4
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Linearity and Reliability Analysis of an Electrically Doped Hetero Material Nanowire TFET.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4307, doi. 10.1007/s11664-020-08143-5
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Refluxing Synthesis and Characterization of UV-Light-Driven Ag-Doped PbMoO4 for Photodegradation of Rhodamine B.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4212, doi. 10.1007/s11664-020-08142-6
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Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4085, doi. 10.1007/s11664-020-08140-8
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Treatment of Surface-Hydroxylated BaTiO3 Particles by Bis(2-ethylhexyl) sulfosuccinate Sodium Salt (AOT) to Improve the Dielectric and Electrical Properties of BaTiO3–Poly(vinylidene fluoride) Composites.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4272, doi. 10.1007/s11664-020-08139-1
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DC Magnetron-Sputtered Mo Thin Films with High Adhesion, Conductivity and Reflectance.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4221, doi. 10.1007/s11664-020-08138-2
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Fabrication of Illumination-Dependent Cu/p-Si Schottky Barrier Diodes by Sandwiching MoO3 Nanoplates as an Interfacial Layer via JNSP Technique.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4249, doi. 10.1007/s11664-020-08137-3
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Theoretical Prediction of Enhanced Thermopower in n-Doped Si/Ge Superlattices Using Effective Mass Approximation.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4431, doi. 10.1007/s11664-020-08136-4
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Enhanced Thermoelectric Performance of SnxBi0.5-xSb1.5Te3 Through the Synergistic Effects of Carrier and Phonon Engineering.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4282, doi. 10.1007/s11664-020-08135-5
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DFT Analysis of Vanadium Tris(Dithiolene)-Based Double-Gated Single-Electron Transistor.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4203, doi. 10.1007/s11664-020-08132-8
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Electronic and Optical Properties of Zigzag BN/AlN Nanoribbons with Misfit Dislocations: First-Principles Calculations.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4100, doi. 10.1007/s11664-020-08131-9
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Effect of Leishman Stain on Synthesis, Characteristics, and Morphology of Zn0.15Cd0.8S0.8 Thin Film.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4160, doi. 10.1007/s11664-020-08130-w
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Postcomposition Preparation and Supercapacitive Properties of Polyaniline Nanotube/Graphene Oxide Composites with Interfacial Electrostatic Interaction.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4076, doi. 10.1007/s11664-020-08128-4
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Performance of a Thermoelectric Module Based on n-Type (La0.12Sr0.88)0.95TiO3−δ and p-Type Ca3Co4−xO9+δ.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4154, doi. 10.1007/s11664-020-08127-5
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Effect of Doping and Annealing on Thermoelectric Properties of Bismuth Telluride Thin Films.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4195, doi. 10.1007/s11664-020-08126-6
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Enhanced Magnetic Properties of Barium Hexaferrite.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4318, doi. 10.1007/s11664-020-08125-7
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Luminescence of Phosphate Glasses: P2O5-ZnO-BaF2-K2TeO3-Al2O3-Nb2O5 Doped with Sm3+ Ions for Display and Laser Material.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4144, doi. 10.1007/s11664-020-08124-8
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High-Quality Nickel Ferrite Synthesized by a Modified Sol–Gel Technique Applied as Microstrip Patch Antenna Substrate.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4186, doi. 10.1007/s11664-020-08120-y
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2D Si3N as a Promising Anode Material for Li/Na-Ion Batteries from First-Principles Study.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4180, doi. 10.1007/s11664-020-08115-9
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Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD).
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4091, doi. 10.1007/s11664-020-08113-x
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Effect of Solution pH on Properties of Cuprous Oxide Thin Films Prepared by Electrodeposition from a New Bath.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4385, doi. 10.1007/s11664-020-08093-y
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Study of Structural, Electrical and Optical Properties of (200)-Oriented CdTe Thin Films Depending on the Post-deposition Low Temperature.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4134, doi. 10.1007/s11664-020-08084-z
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