Works matching IS 03615235 AND DT 2017 AND VI 46 AND IP 9
Results: 19
Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5374, doi. 10.1007/s11664-017-5441-9
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The Numerical-Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5471, doi. 10.1007/s11664-017-5513-x
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Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH, H, Ar ECR Plasmas.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5400, doi. 10.1007/s11664-017-5528-3
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MCT: A UK Retrospective-Reminiscences of a Crystal Grower.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5430, doi. 10.1007/s11664-017-5563-0
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Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5479, doi. 10.1007/s11664-017-5586-6
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Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5424, doi. 10.1007/s11664-017-5588-4
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Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5379, doi. 10.1007/s11664-017-5589-3
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Development and Production of Array Barrier Detectors at SCD.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5386, doi. 10.1007/s11664-017-5590-x
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Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5448, doi. 10.1007/s11664-017-5596-4
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Impact of CdZnTe Substrates on MBE HgCdTe Deposition.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5418, doi. 10.1007/s11664-017-5599-1
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Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5367, doi. 10.1007/s11664-017-5621-7
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Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II-VI and III-V MWIR Detector Technologies for Space Applications.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5405, doi. 10.1007/s11664-017-5628-0
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- Article
Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5394, doi. 10.1007/s11664-017-5637-z
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Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5361, doi. 10.1007/s11664-017-5646-y
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Dr. Herbert Frank Schaake: In Memoriam.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5359, doi. 10.1007/s11664-017-5660-0
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Foreword.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5357, doi. 10.1007/s11664-017-5661-z
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HgTe Quantum Dots for Near-, Mid-, and Long-Wavelength IR Devices.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5411, doi. 10.1007/s11664-017-5673-8
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Micro-diffraction Investigation of Localized Strain in Mesa-etched HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5442, doi. 10.1007/s11664-017-5691-6
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Simulation of Small-Pitch HgCdTe Photodetectors.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5458, doi. 10.1007/s11664-017-5378-z
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