Works matching IS 03615235 AND DT 2016 AND VI 45 AND IP 9

Results: 33

Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4640, doi. 10.1007/s11664-016-4466-9

By:

Qiao, H.;
Hu, W.;
Li, T.;
Li, X.;
Chang, Y.

Publication type:

Article

Hole Transport in Arsenic-Doped HgCdTe with x ≥ 0.5.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4686, doi. 10.1007/s11664-016-4474-9

By:

Umana-Membreno, G.;
Kala, H.;
Bains, S.;
Akhavan, N.;
Antoszewski, J.;
Maxey, C.;
Faraone, L.

Publication type:

Article

Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4603, doi. 10.1007/s11664-016-4475-8

By:

Lesmanne, Emeline;
Espiau de Lamaestre, Roch;
Boutami, Salim;
Durantin, Cédric;
Dussopt, Laurent;
Badano, Giacomo

Publication type:

Article

A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4631, doi. 10.1007/s11664-016-4476-7

By:

Pinkie, Benjamin;
Bellotti, Enrico

Publication type:

Article

Dry etched SiO Mask for HgCdTe Etching Process.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4705, doi. 10.1007/s11664-016-4479-4

By:

Chen, Y.;
Ye, Z.;
Sun, C.;
Deng, L.;
Zhang, S.;
Xing, W.;
Hu, X.;
Ding, R.;
He, L.

Publication type:

Article

Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4524, doi. 10.1007/s11664-016-4481-x

By:

Vallone, Marco;
Goano, Michele;
Bertazzi, Francesco;
Ghione, Giovanni;
Schirmacher, Wilhelm;
Hanna, Stefan;
Figgemeier, Heinrich

Publication type:

Article

CdTe Photovoltaics for Sustainable Electricity Generation.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4612, doi. 10.1007/s11664-016-4484-7

By:

Munshi, Amit;
Sampath, Walajabad

Publication type:

Article

Hybrid Hamiltonian and Green's Function Approach for Studying Native Point Defect Levels in Semiconductor Compounds and Superlattices.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4574, doi. 10.1007/s11664-016-4494-5

By:

Krishnamurthy, Srini;
Orden, Derek;
Yu, Zhi-Gang

Publication type:

Article

Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4557, doi. 10.1007/s11664-016-4506-5

By:

Kerlain, A.;
Brunner, A.;
Sam-Giao, D.;
Pére-Laperne, N.;
Rubaldo, L.;
Destefanis, V.;
Rochette, F.;
Cervera, C.

Publication type:

Article

HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4532, doi. 10.1007/s11664-016-4516-3

By:

Gravrand, O.;
Rothman, J.;
Cervera, C.;
Baier, N.;
Lobre, C.;
Zanatta, J.;
Boulade, O.;
Moreau, V.;
Fieque, B.

Publication type:

Article

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4518, doi. 10.1007/s11664-016-4522-5

By:

Fourreau, Y.;
Pantzas, K.;
Patriarche, G.;
Destefanis, V.

Publication type:

Article

MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4542, doi. 10.1007/s11664-016-4523-4

By:

Hanna, S.;
Eich, D.;
Mahlein, K.-M.;
Fick, W.;
Schirmacher, W.;
Thöt, R.;
Wendler, J.;
Figgemeier, H.

Publication type:

Article

Confirmation of Auger-1 Minority-Carrier Lifetimes in HgCdTe and Prediction of Dark Current for Long-Wave Infrared Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4511, doi. 10.1007/s11664-016-4535-0

By:

Destefanis, V.;
Kerlain, A.

Publication type:

Article

Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4668, doi. 10.1007/s11664-016-4544-z

By:

Simingalam, Sina;
Pattison, James;
Chen, Yuanping;
Wijewarnasuriya, Priyalal;
Rao, Mulpuri

Publication type:

Article

Analysis of III-V Superlattice nB n Device Characteristics.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4646, doi. 10.1007/s11664-016-4545-y

By:

Rhiger, David;
Smith, Edward;
Kolasa, Borys;
Kim, Jin;
Klem, John;
Hawkins, Samuel

Publication type:

Article

High-Quality AgGaTe Layers on Si Substrates with AgTe Buffer Layers.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4692, doi. 10.1007/s11664-016-4548-8

By:

Uruno, Aya;
Kobayashi, Masakazu

Publication type:

Article

Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4711, doi. 10.1007/s11664-016-4556-8

By:

Song, P.;
Ye, Z.;
Huang, A.;
Chen, H.;
Hu, X.;
Ding, R.;
He, L.

Publication type:

Article

Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4596, doi. 10.1007/s11664-016-4558-6

By:

Gu, R.;
Lei, W.;
Antoszewski, J.;
Faraone, L.

Publication type:

Article

High-Operating Temperature HgCdTe: A Vision for the Near Future.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4587, doi. 10.1007/s11664-016-4566-6

By:

Lee, D.;
Carmody, M.;
Piquette, E.;
Dreiske, P.;
Chen, A.;
Yulius, A.;
Edwall, D.;
Bhargava, S.;
Zandian, M.;
Tennant, W.

Publication type:

Article

Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4607, doi. 10.1007/s11664-016-4586-2

By:

Mouzali, S.;
Lefebvre, S.;
Rommeluère, S.;
Ferrec, Y.;
Primot, J.

Publication type:

Article

Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4654, doi. 10.1007/s11664-016-4602-6

By:

Schuster, J.;
DeWames, R.;
DeCuir, E.;
Bellotti, E.;
Dhar, N.;
Wijewarnasuriya, P.

Publication type:

Article

Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4552, doi. 10.1007/s11664-016-4606-2

By:

He, J.;
Hu, W.;
Ye, Z.;
Lv, Y.;
Chen, X.;
Lu, W.

Publication type:

Article

High-Temperature Characteristics of an InAsSb/AlAsSb nBn Detector.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4680, doi. 10.1007/s11664-016-4633-z

By:

Ting, David;
Soibel, Alexander;
Höglund, Linda;
Hill, Cory;
Keo, Sam;
Fisher, Anita;
Gunapala, Sarath

Publication type:

Article

Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4674, doi. 10.1007/s11664-016-4637-8

By:

Sun, Quanzhi;
Wei, Yanfeng;
Zhang, Juan;
Sun, Ruiyun

Publication type:

Article

Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4497, doi. 10.1007/s11664-016-4640-0

By:

Apte, Palash;
Rybnicek, Kimon;
Stoltz, Andrew

Publication type:

Article

Analysis of Etched CdZnTe Substrates.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4502, doi. 10.1007/s11664-016-4642-y

By:

Benson, J.;
Bubulac, L.;
Jaime-Vasquez, M.;
Lennon, C.;
Arias, J.;
Smith, P.;
Jacobs, R.;
Markunas, J.;
Almeida, L.;
Stoltz, A.;
Wijewarnasuriya, P.;
Peterson, J.;
Reddy, M.;
Jones, K.;
Johnson, S.;
Lofgreen, D.

Publication type:

Article

Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4580, doi. 10.1007/s11664-016-4659-2

By:

Kujofsa, Tedi;
Ayers, J.

Publication type:

Article

Passivation Effect of Atomic Layer Deposition of AlO Film on HgCdTe Infrared Detectors.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4716, doi. 10.1007/s11664-016-4686-z

By:

Zhang, Peng;
Ye, Zhen-Hua;
Sun, Chang-Hong;
Chen, Yi-Yu;
Zhang, Tian-Ning;
Chen, Xin;
Lin, Chun;
Ding, Ring-Jun;
He, Li

Publication type:

Article

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4563, doi. 10.1007/s11664-016-4702-3

By:

Kopytko, M.;
Jóźwikowski, K.;
Martyniuk, P.;
Gawron, W.;
Madejczyk, P.;
Kowalewski, A.;
Markowska, O.;
Rogalski, A.;
Rutkowski, J.

Publication type:

Article

Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4620, doi. 10.1007/s11664-016-4717-9

By:

Park, J.;
Pepping, J.;
Mukhortova, A.;
Ketharanathan, S.;
Kodama, R.;
Zhao, J.;
Hansel, D.;
Velicu, S.;
Aqariden, F.

Publication type:

Article

Band Offsets of III-V and II-VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4626, doi. 10.1007/s11664-016-4729-5

By:

Perera, A.;
Lao, Y.;
Wijewarnasuriya, P.;
Krishna, S.

Publication type:

Article

Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAsSb and HgCdTe.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4697, doi. 10.1007/s11664-016-4738-4

By:

Wames, Roger

Publication type:

Article

Surface Leakage Mechanisms in III-V Infrared Barrier Detectors.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4663, doi. 10.1007/s11664-016-4451-3

By:

Sidor, D.;
Savich, G.;
Wicks, G.

Publication type:

Article