Works matching IS 03615235 AND DT 2016 AND VI 45 AND IP 4
Results: 42
Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2078, doi. 10.1007/s11664-015-4185-7
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- Article
SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF).
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2019, doi. 10.1007/s11664-015-4234-2
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- Article
Localized Charge Carrier Transport Properties of ZnNiO/NiO Two-Phase Composites.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2059, doi. 10.1007/s11664-015-4243-1
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- Article
Influence of Processing Conditions and Material Properties on Electrohydrodynamic Direct Patterning of a Polymer Solution.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2291, doi. 10.1007/s11664-015-4252-0
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- Article
Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2184, doi. 10.1007/s11664-015-4254-y
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- Article
Fabrication of Nanocomposites of SnO and MgAlO for Gas Sensing Applications.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2193, doi. 10.1007/s11664-015-4261-z
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- Article
Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2206, doi. 10.1007/s11664-015-4269-4
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- Article
Thermodynamic Description of the Ternary Sb-Sn-Zn System.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2216, doi. 10.1007/s11664-015-4276-5
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- Article
Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2087, doi. 10.1007/s11664-015-4278-3
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- Article
Facile Synthesis and Characterization of Two Dimensional Layered Tin Disulfide Nanowalls.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2115, doi. 10.1007/s11664-015-4279-2
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- Article
Optical Characterization of Si-Based GeSn Alloys with Sn Compositions up to 12%.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2133, doi. 10.1007/s11664-015-4283-6
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- Article
Generation of White Light from Dysprosium-Doped Strontium Aluminate Phosphor by a Solid-State Reaction Method.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2222, doi. 10.1007/s11664-015-4284-5
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- Article
Influence of Boron Substitution on Conductance of Pyridine- and Pentane-Based Molecular Single Electron Transistors: First-Principles Analysis.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2233, doi. 10.1007/s11664-015-4287-2
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- Article
Quantitative Analysis of Porosity and Transport Properties by FIB-SEM 3D Imaging of a Solder Based Sintered Silver for a New Microelectronic Component.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2242, doi. 10.1007/s11664-015-4288-1
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- Article
Temperature Dependent Electrical Properties of PZT Wafer.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2252, doi. 10.1007/s11664-015-4290-7
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- Article
Enhancement of Curie Temperature ( T) and Magnetization of Fe-Ni Invar alloy Through Cu Substitution and with He Ion Irradiation.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2258, doi. 10.1007/s11664-015-4293-4
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- Article
Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2172, doi. 10.1007/s11664-015-4296-1
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- Article
In Situ Growth of InS Nanorods in Poly(3-Hexylthiophene) Hybrid Films.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2266, doi. 10.1007/s11664-015-4299-y
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- Article
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2121, doi. 10.1007/s11664-015-4300-9
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- Article
Quick Fabrication and Thermoelectric Properties of CuSbS Tetrahedrite.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2274, doi. 10.1007/s11664-015-4301-8
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- Article
Anisotropic Mechanical and Giant Magneto-Impedance Properties of Cobalt-Rich Amorphous Ribbons.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2278, doi. 10.1007/s11664-015-4304-5
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- Article
Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2178, doi. 10.1007/s11664-015-4305-4
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- Article
Room-Temperature Fabrication of a Flexible Thermoelectric Generator Using a Dry-Spray Deposition System.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2286, doi. 10.1007/s11664-015-4306-3
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- Article
Enhanced Field-Emission Performance from Carbon Nanotube Emitters on Nickel Foam Cathodes.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2299, doi. 10.1007/s11664-015-4308-1
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- Article
Effect of Growth Parameters and Substrate Surface Preparation for High-Density Vertical GaAs/GaAsSb Core-Shell Nanowires on Silicon with Photoluminescence Emission at 1.3 μm.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2108, doi. 10.1007/s11664-015-4316-1
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- Article
Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2045, doi. 10.1007/s11664-015-4317-0
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- Article
Erratum to: Influence of Processing Conditions and Material Properties on Electrohydrodynamic Direct Patterning of a Polymer Solution.
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- 2016
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- Erratum
Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2102, doi. 10.1007/s11664-016-4333-8
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Study of Defects in GaN In Situ Doped with Eu Ion Grown by OMVPE.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2001, doi. 10.1007/s11664-016-4337-4
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- Article
Study on Solid-Phase Crystallization of Amorphized Vanadium-Doped ZnO Thin Films.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2008, doi. 10.1007/s11664-016-4338-3
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- Article
Structural, Optical, and Electrical Characterization of Monoclinic β-GaO Grown by MOVPE on Sapphire Substrates.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2031, doi. 10.1007/s11664-016-4346-3
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- Article
Dynamics of an Optically Generated Electric Field in a Quantum Dot Molecule Device Using Time-Resolved Photoluminescence Measurements.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2038, doi. 10.1007/s11664-016-4348-1
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- Article
MBE Grown InGaN Thin Films with Bright Visible Emission Centered at 550 nm.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2071, doi. 10.1007/s11664-016-4349-0
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- Article
Analysis of Charge Redistribution During Self-discharge of Double-Layer Supercapacitors.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2160, doi. 10.1007/s11664-016-4357-0
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- Article
Efficiency of a Sandwiched Thermoelectric Material with a Graded Interlayer and Temperature-Dependent Properties.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2142, doi. 10.1007/s11664-016-4358-z
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- Article
High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2025, doi. 10.1007/s11664-016-4359-y
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- Article
Spin-Controlled Conductivity in a Thiophene-Functionalized Iron-Bis(dicarbollide).
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2150, doi. 10.1007/s11664-016-4371-2
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- Article
Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2066, doi. 10.1007/s11664-016-4378-8
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- Article
Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2127, doi. 10.1007/s11664-016-4386-8
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- Article
Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2092, doi. 10.1007/s11664-016-4387-7
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- Article
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD Gas Mixing.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2051, doi. 10.1007/s11664-016-4402-z
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- Article
Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2013, doi. 10.1007/s11664-015-4175-9
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- Article